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91. 发明授权

US07833401B2 Electroplating an yttrium-containing coating on a chamber component 有权
标题翻译：在腔室部件上电镀含钇的涂层
公开(公告)号：US07833401B2
公开(公告)日：2010-11-16
申请号：US11766723
申请日：2007-06-21
申请人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
发明人： Nianci Han , Li Xu , Hong Shih , Yang Zhang , Danny Lu , Jennifer Y. Sun
IPC分类号： C25D5/10 , C25D5/50 , C25D3/54
CPC分类号： C25D3/54 , C23C16/4404 , C23C16/4411 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/36 , C23C28/42 , C23C30/00 , C23C30/005 , C25D3/44 , C25D3/56 , C25D5/18 , C25D5/50 , H01J37/32477 , H01L21/67115 , Y10T428/12458 , Y10T428/12611 , Y10T428/12618 , Y10T428/12667 , Y10T428/12736 , Y10T428/12778 , Y10T428/12806
摘要： A method of forming a component capable of being exposed to a plasma in a process chamber comprises forming a structure comprising a surface and electroplating yttrium, and optionally aluminum or zirconium, onto the surface. Thereafter, the electroplated layer can be annealed to oxide the yttrium and other electroplated species.
摘要翻译：形成能够在处理室中暴露于等离子体的组分的方法包括在表面上形成包括表面和电镀钇以及任选的铝或锆的结构。此后，可以将电镀层退火以氧化钇和其它电镀物质。

92. 发明申请

US20100229793A1 SHOWERHEAD FOR VAPOR DEPOSITION 审中-公开
标题翻译：用于蒸气沉积的淋浴器
公开(公告)号：US20100229793A1
公开(公告)日：2010-09-16
申请号：US12725326
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。每个管连接到上管和下管板的各个孔中并与其流体连通。

93. 发明授权

US07780789B2 Vortex chamber lids for atomic layer deposition 有权
标题翻译：涡流室盖用于原子层沉积
公开(公告)号：US07780789B2
公开(公告)日：2010-08-24
申请号：US11923589
申请日：2007-10-24
申请人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
发明人： Dien-Yeh Wu , Puneet Bajaj , Xiaoxiong Yuan , Steven H. Kim , Schubert S. Chu , Paul F. Ma , Joseph F. Aubuchon
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面室盖组件。锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

94. 发明授权

US07780788B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07780788B2
公开(公告)日：2010-08-24
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

95. 发明授权

US07732308B2 Process for depositing layers containing silicon and germanium 有权
标题翻译：用于沉积含硅和锗的层的工艺
公开(公告)号：US07732308B2
公开(公告)日：2010-06-08
申请号：US11572101
申请日：2005-02-22
申请人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
发明人： Marcus Schumacher , Peter Baumann , Johannes Lindner , Timothy McEntee
IPC分类号： H01L21/00
CPC分类号： C23C16/4411 , C23C16/4481 , C23C16/52 , Y10S438/933
摘要： The invention relates to a method for depositing at least one semiconductor layer on at least one substrate in a processing chamber (2). Said semiconductor layer is composed of several components which are evaporated by non-continuously injecting a liquid starting material (3) or a starting material (3) dissolved in a liquid into a tempered evaporation chamber (4) with the aid of one respective injector unit (5) while said vapor is fed to the processing chamber by means of a carrier gas (7). The inventive method is characterized in that the mass flow rate parameters, such as the preliminary injection pressure, the injection frequency, the pulse/pause ratio, and the phase relation between the pulses/pauses and the pulses/pauses of the other injector unit(s), which determine the progress of the mass flow rate of a first silicon-containing starting material and a germanium-containing second starting material (3) through the associated injector unit (5), are individually adjusted or varied.
摘要翻译：本发明涉及一种用于在处理室（2）中的至少一个衬底上沉积至少一个半导体层的方法。所述半导体层由若干组分组成，这些组分通过一个相应的注射器单元不间断地将溶解在液体中的液体原料（3）或起始材料（3）蒸发到回火蒸发室（4）中来蒸发，（5），同时所述蒸气通过载气（7）供给到处理室。本发明的方法的特征在于，质量流量参数，例如初步注射压力，注射频率，脉冲/暂停比率以及脉冲/停顿之间的相位关系和另一个注射器单元的脉冲/停顿（ s），其通过相关联的注射器单元（5）确定第一含硅起始材料和含锗的第二起始材料（3）的质量流率的进度被单独调整或变化。

96. 发明申请

US20090211523A1 Apparatus to Control Semiconductor Film Deposition Characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

97. 发明申请

US20090197014A1 Apparatus and method for coating diamond on work pieces via hot filament chemical vapor deposition 审中-公开
标题翻译：通过热丝化学气相沉积在工件上涂覆金刚石的装置和方法
公开(公告)号：US20090197014A1
公开(公告)日：2009-08-06
申请号：US12068249
申请日：2008-02-04
申请人： Jin-Yu Wu , Chun-Han Wang , Ding-Guey Tsai , Ming-Ruesy Tsai , Chi-Fong Ai
发明人： Jin-Yu Wu , Chun-Han Wang , Ding-Guey Tsai , Ming-Ruesy Tsai , Chi-Fong Ai
IPC分类号： H05H1/24 , B05C11/00
CPC分类号： H01J37/32522 , C23C16/27 , C23C16/271 , C23C16/4411 , C23C16/4412 , C23C16/45523 , C23C16/45565 , C23C16/52 , H01J37/32009 , H01J2237/3321
摘要： There is a disclosed apparatus for coating diamond on work pieces via hot filament chemical vapor deposition. The apparatus includes a chamber, a pump for pumping air from the chamber, a pressure controller for con trolling the pressure in the chamber, a grid disposed in the chamber, a grid-bias power supply for providing a positive bias to the grid, a holder for carrying the work pieces, a holder-bias power supply for providing a negative bias to the holder, filaments provided between the grid and the carrier, a filament power supply for energizing the filaments to heat up, a programmable temperature controller for controlling the temperature in the chamber and a pipe for transferring reaction gas into the chamber.
摘要翻译：公开了一种用于通过热丝化学气相沉积在工件上涂覆金刚石的公开的装置。该装置包括：腔室，用于从腔室抽空气的泵，用于控制腔室内的压力的压力控制器，设置在腔室中的格栅，用于向栅格提供正偏压的栅极偏置电源; 用于承载工件的保持器，用于向保持器提供负偏压的保持器偏置电源，设置在电网和载体之间的灯丝，用于使灯丝加热的灯丝电源，用于控制灯丝的可编程温度控制器室内的温度和用于将反应气体输送到室中的管道。

98. 发明申请

US20090178611A1 GALLIUM TRICHLORIDE INJECTION SCHEME 有权
标题翻译：三氯化镓注射方案
公开(公告)号：US20090178611A1
公开(公告)日：2009-07-16
申请号：US12305534
申请日：2007-11-15
申请人： Chantal Arena , Christiaan Werkhoven
发明人： Chantal Arena , Christiaan Werkhoven
IPC分类号： C30B25/10 , C23C16/34
CPC分类号： C30B25/10 , C23C16/303 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45593 , C30B25/14 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/0262
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours. A system for conducting the method is also provided.
摘要翻译：本发明涉及半导体处理设备和方法的领域，并且特别提供用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的方法和设备，以供使用作为用于外延沉积的衬底，用于晶片等。在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。还提供了一种用于进行该方法的系统。

99. 发明申请

US20090133835A1 PROCESSING APPARATUS 有权
标题翻译：加工设备
公开(公告)号：US20090133835A1
公开(公告)日：2009-05-28
申请号：US12090493
申请日：2006-10-18
申请人： Shinya Nishimoto , Tamaki Yuasa
发明人： Shinya Nishimoto , Tamaki Yuasa
IPC分类号： C23F1/08 , C23C16/00 , B05C11/00
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/511 , H01J37/32192 , H01J37/32522
摘要： Provided is a structure of an improved processing vessel for a processing apparatus which processes a target object, such as a semiconductor wafer, which is heated in the metal cylindrical shaped processing vessel by using a processing gas. The processing vessel (34) is composed of a plurality of block bodies (80, 82, 84) mutually connected by being stacked in the vertical direction. Heat insulating vacuum layers (86, 88) are arranged between the adjacent block bodies. Thus, heat transfer between block bodies is suppressed, so that temperature of each block body can be separately controlled, thereby improving energy efficiency.
摘要翻译：提供了一种用于处理装置的改进的处理容器的结构，其处理通过使用处理气体在金属圆柱形处理容器中加热的目标物体，例如半导体晶片。处理容器（34）由沿垂直方向堆叠而相互连接的多个块体（80,82,84）构成。绝热真空层（86,88）设置在相邻块体之间。因此，能够抑制块体之间的热传递，能够分别控制各块体的温度，提高能量效率。

100. 发明授权

US07514120B2 Precoat film forming method 有权
标题翻译：预涂膜成型方法
公开(公告)号：US07514120B2
公开(公告)日：2009-04-07
申请号：US11079294
申请日：2005-03-15
申请人： Satoshi Wakabayashi , Toshio Hasegawa
发明人： Satoshi Wakabayashi , Toshio Hasegawa
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/4581 , C23C16/56
摘要： The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.
摘要翻译：具有用于装载物体的装载台的成膜装置的预涂膜形成方法包括在成膜装置内供给处理气体并将预涂TiN膜沉积在装载台的表面上的沉积步骤和稳定步骤减少和稳定装载台上的预涂膜，其中在沉积步骤中形成在装载台上的预涂膜的膜厚在一定范围内，使得即使预涂膜的膜厚变化，辐射热量来自装载台基本上是恒定的。因此，由于在半导体晶片的成膜工艺中保持热稳定性，因此可以提高成膜工艺中的再现性。

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