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    • 91. 发明申请
    • Integrated Diode Das Detector
    • 集成二极管探测器
    • US20140301534A1
    • 2014-10-09
    • US13857624
    • 2013-04-05
    • GENERAL ELECTRIC COMPANY
    • Naresh Kesavan RaoJames Wilson RoseChristopher David UngerAbdelaziz IkhlefJonathan David Short
    • G01T1/20G01N23/04
    • G01T1/247A61B6/42A61B6/4233H01L27/14661H01L27/14663
    • Improved imaging systems are disclosed. More particularly, the present disclosure provides for an improved image sensor assembly for an imaging system, the image sensor assembly having an integrated photodetector array and its associated data acquisition electronics fabricated on the same substrate. By integrating the electronics on the same substrate as the photodetector array, this thereby reduces fabrications costs, and reduces interconnect complexity. Since both the photodiode contacts and the associated electronics are on the same substrate/plane, this thereby substantially eliminates certain expensive/time-consuming processing techniques. Moreover, the co-location of the electronics next to or proximal to the photodetector array provides for a much finer resolution detector assembly since the interconnect bottleneck between the electronics and the photodetector array is substantially eliminated/reduced. The co-location of the electronics next to or proximal to the photodetector array also enables/facilitates programmable pixel configuration for optimal image quality.
    • 公开了改进的成像系统。 更具体地,本公开提供了一种用于成像系统的改进的图像传感器组件,该图像传感器组件具有集成的光电检测器阵列及其在相同基板上制造的相关联的数据采集电子装置。 通过将电子元件集成在与光电检测器阵列相同的基板上,由此降低了制造成本,并降低了互连复杂度。 由于光电二极管触点和相关联的电子器件都在相同的衬底/平面上,因此基本上消除了某些昂贵/耗时的处理技术。 此外,由于电子设备和光电检测器阵列之间的互连瓶颈基本上被消除/减少,所以电子器件靠近光电检测器阵列的共同定位提供了更精细的分辨率检测器组件。 靠近或接近光电检测器阵列的电子设备的共同位置也使得/促进可编程像素配置以获得最佳图像质量。
    • 95. 发明授权
    • Data acquisition
    • 数据采集
    • US08525122B2
    • 2013-09-03
    • US13254173
    • 2010-02-18
    • Marc ChappoRandall P. LuhtaChristopher J. VrettosBrian E. Harwood
    • Marc ChappoRandall P. LuhtaChristopher J. VrettosBrian E. Harwood
    • G01T1/20
    • G01T1/2006A61B6/00A61B6/03A61B6/405A61B6/42A61B6/4233A61B6/585G01T1/2018
    • An imaging detector includes processing electronics (208) with a thermal coefficient about equal to a negative of a summation of thermal coefficients of a photosensor array (204) and a scintillator array (202) of the detector. In another instance, the imaging detector includes an A/D converter (302) that alternately converts first charge corresponding to impinging radiation into a first signal and second charge corresponding to decaying charge into a second signal and a logic unit (308) that corrects the first signal based on the second signal. In another instance, the imaging detector includes an A/D converter (302), an integrator offset voltage signal determiner (318), and a logic unit (308), wherein the determiner (318) induces an electrical current via an offset voltage, the A/D converter (302) measures the current, and the logic unit (308) calculates a resistance of the photosensor array (204) based on the reference voltage and the measured current.
    • 成像检测器包括处理电子器件(208),其热系数约等于检测器的光电传感器阵列(204)和闪烁体阵列(202)的热系数的总和的负值。 在另一种情况下,成像检测器包括A / D转换器(302),其将对应于入射辐射的第一电荷交替地转换成第一信号,并将与衰减电荷相对应的第二电荷转换成第二信号;以及逻辑单元(308),其校正 第一信号基于第二信号。 在另一种情况下,成像检测器包括A / D转换器(302),积分器偏移电压信号确定器(318)和逻辑单元(308),其中确定器(318)经由偏移电压引起电流, A / D转换器(302)测量电流,并且逻辑单元(308)基于参考电压和测量的电流来计算光电传感器阵列(204)的电阻。