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91. 发明申请

US20110117738A1 METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT 有权
标题翻译：使用GCIB处理改善硅胶性能的方法
公开(公告)号：US20110117738A1
公开(公告)日：2011-05-19
申请号：US12873573
申请日：2010-09-01
申请人： Noel Russell , John J. Hautala , John Gumpher
发明人： Noel Russell , John J. Hautala , John Gumpher
IPC分类号： H01L21/3205
CPC分类号： H01L21/28506 , C23C14/02 , C23C14/024 , C23C14/16 , C23C14/5833 , H01J37/08 , H01J37/317 , H01J2237/0812 , H01J2237/3165 , H01L21/02063 , H01L21/28518 , H01L21/3205
摘要： A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
摘要翻译：对半导体装置的制造方法进行说明。该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

92. 发明申请

US20110084214A1 GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURES 审中-公开
标题翻译：用于在非平面门结构中制备隔离层的气体离子束处理方法
公开(公告)号：US20110084214A1
公开(公告)日：2011-04-14
申请号：US12575806
申请日：2009-10-08
申请人： John J. Hautala , Noel Russell
发明人： John J. Hautala , Noel Russell
IPC分类号： H01J3/14
CPC分类号： H01J37/3178 , H01J2237/31732 , H01L21/26513 , H01L21/26566 , H01L21/26586 , H01L29/66795 , H01L29/66803 , H01L29/785
摘要： A gas cluster ion beam (GCIB) processing method for preparing an isolation layer in a non-planar gate structure is described. The method forms a non-planar gate structure on a substrate. Additionally, the GCIB processing method includes generating a GCIB formed from a material source for forming an isolation layer for the non-planar gate structure. Additionally yet, the GCIB processing method includes selecting a beam energy, a beam energy distribution, a beam focus, and a beam dose to achieve a desired thickness of the isolation layer, accelerating the GCIB to achieve the beam energy, focusing the GCIB to achieve the beam focus, and irradiating at least a portion of the substrate with the accelerated GCIB according to the beam dose. The GCIB processing method forms the isolation layer at a base surface adjacent a base of the non-planar gate structure using the GCIB to achieve the desired thickness.
摘要翻译：描述了用于在非平面栅极结构中制备隔离层的气体簇离子束（GCIB）处理方法。该方法在衬底上形成非平面栅极结构。此外，GCIB处理方法包括产生由用于形成非平面栅极结构的隔离层的材料源形成的GCIB。另外，GCIB处理方法包括选择光束能量，光束能量分布，光束焦点和光束剂量以实现隔离层的期望厚度，加速GCIB以实现光束能量，将GCIB聚焦以实现光束聚焦，以及根据光束剂量用加速的GCIB照射至少一部分基底。 GCIB处理方法使用GCIB在与非平面栅极结构的基部相邻的基底表面处形成隔离层，以实现期望的厚度。

93. 发明授权

US07825389B2 Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture 有权
标题翻译：用于控制由气体混合物形成的气体团簇离子束的方法和装置
公开(公告)号：US07825389B2
公开(公告)日：2010-11-02
申请号：US11950128
申请日：2007-12-04
申请人： John J. Hautala , Matthew C. Gwinn , Jerald P. Dykstra
发明人： John J. Hautala , Matthew C. Gwinn , Jerald P. Dykstra
IPC分类号： G21G5/00
CPC分类号： H01J37/304 , H01J27/026 , H01J37/3053 , H01J2237/006 , H01J2237/0812 , H01J2237/24507 , H01J2237/30455 , H01L21/26566
摘要： Methods and apparatus for controlling a gas cluster ion beam formed from a plurality of process gases in a gas mixture. The methods and apparatus involve measuring gas analysis data relating to the composition of the gas mixture and modifying the irradiation of the workpiece in response to the detected parameter. The gas analysis data can be derived from samples of the composition of the gas mixture flowing from a gas source to the gas cluster ion beam apparatus or samples of the residual gases inside the vacuum vessel of the gas cluster ion beam apparatus.
摘要翻译：用于控制由气体混合物中的多种处理气体形成的气体簇离子束的方法和装置。所述方法和装置包括测量与气体混合物的组成相关的气体分析数据，并响应于检测到的参数来修改工件的照射。气体分析数据可以从气体源到气体簇离子束装置的气体混合物的组成的样本或气体团簇离子束装置的真空容器内的残留气体的样品的样品得到。

94. 发明申请

US20100243919A1 METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING 有权
标题翻译：使用气体离子束处理改性材料层的方法
公开(公告)号：US20100243919A1
公开(公告)日：2010-09-30
申请号：US12415755
申请日：2009-03-31
申请人： John J. Hautala , Nathan E. Baxter
发明人： John J. Hautala , Nathan E. Baxter
IPC分类号： A61N5/00
CPC分类号： H01J37/317 , H01J27/026 , H01J37/08 , H01J37/3171 , H01J37/3178 , H01J2237/0812 , H01J2237/316 , H01J2237/3165 , H01J2237/31701 , H01J2237/31732
摘要： A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
摘要翻译：描述了改变衬底上的材料层的方法。该方法包括在基底上形成材料层。此后，该方法包括建立具有每原子约0.25eV至约100eV /原子比的每原子比能量的气体簇离子束（GCIB），以及通过将材料层暴露于GCIB来修饰该材料层。

95. 发明申请

US20100227142A1 ULTRA-THIN FILM FORMATION USING GAS CLUSTER ION BEAM PROCESSING 有权
标题翻译：使用气体离子束加工的超薄膜形成
公开(公告)号：US20100227142A1
公开(公告)日：2010-09-09
申请号：US12399449
申请日：2009-03-06
申请人： John J. Hautala , Edmund Burke , Noel Russell , Gregory Herdt
发明人： John J. Hautala , Edmund Burke , Noel Russell , Gregory Herdt
IPC分类号： A61N5/00 , B44C1/22 , B32B5/00
CPC分类号： C23C14/221 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02227 , H01L21/02238 , H01L21/02247 , H01L21/02249 , H01L21/02252 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31662 , H01L21/318 , H01L21/3185 , H01L21/3212 , H01L21/76802 , H01L21/76807 , H01L21/76825 , H01L21/76829 , H01L21/76834 , H01L21/7684 , Y10S438/902
摘要： A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.
摘要翻译：描述了在衬底上制备薄膜的方法。该方法包括使用气体簇离子束（GCIB）在衬底的一部分上形成超薄密封膜，其中超薄密封膜具有小于约5nm的厚度。该方法还包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生GCIB。选择光束加速电位和光束剂量以实现小于约5纳米（nm）的薄膜的厚度。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。通过这样做，薄膜形成在基板的至少一部分上以获得期望的厚度。

96. 发明申请

US20100209627A1 METHOD FOR DEPOSITING HYDROGENATED DIAMOND-LIKE CARBON FILMS USING A GAS CLUSTER ION BEAM 失效
标题翻译：使用气体离子束沉积氢化金刚石碳膜的方法
公开(公告)号：US20100209627A1
公开(公告)日：2010-08-19
申请号：US12389010
申请日：2009-02-19
申请人： Martin D. Tabat
发明人： Martin D. Tabat
IPC分类号： C23C14/28
CPC分类号： C23C16/26 , C23C16/513
摘要： A method for depositing a hydrogenated diamond-like carbon (H-DLC) film on a surface of a substrate. The method includes maintaining a reduced-pressure environment around a substrate holder for holding a substrate, holding the substrate securely within the reduced-pressure environment, and forming a gas cluster ion beam (GCIB) from a pressurized gas containing hydrocarbon gas and a carrier gas. The method further includes accelerating the GCIB to the reduced-pressure environment, irradiating the accelerated GCIB onto at least a portion of the surface of the substrate, and forming an H-DLC film on the surface.
摘要翻译：一种在基材表面上沉积氢化金刚石碳（H-DLC）膜的方法。该方法包括保持基板保持器周围的减压环境，用于保持基板，将基板牢固地保持在减压环境内，以及从含有烃气体和载气的加压气体形成气体簇离子束（GCIB）。该方法还包括将GCIB加速至减压环境，将加速的GCIB照射到基材表面的至少一部分上，并在表面上形成H-DLC膜。

97. 发明申请

US20100200774A1 MULTI-SEQUENCE FILM DEPOSITION AND GROWTH USING GAS CLUSTER ION BEAM PROCESSING 审中-公开
标题翻译：使用气体离子束处理的多序列膜沉积和生长
公开(公告)号：US20100200774A1
公开(公告)日：2010-08-12
申请号：US12367757
申请日：2009-02-09
申请人： Edmund Burke , John J. Hautala , Michael Graf
发明人： Edmund Burke , John J. Hautala , Michael Graf
IPC分类号： H01J37/08
CPC分类号： H01L21/67213
摘要： A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents.
摘要翻译：描述了在基板上形成薄膜的方法。该方法包括使用第一气体团簇离子束（GCIB）在衬底上沉积第一材料层，第一材料层包括第一原子成分，并且从第一材料层的至少表面部分生长第二材料层使用第二GCIB引入第二原子成分，所述第二材料层包含所述第一和第二原子组分的反应产物。

98. 发明授权

US07754588B2 Method to improve a copper/dielectric interface in semiconductor devices 有权
标题翻译：改善半导体器件中铜/电介质界面的方法
公开(公告)号：US07754588B2
公开(公告)日：2010-07-13
申请号：US11864318
申请日：2007-09-28
申请人： Noel Russell , Steven Sherman , John J. Hautala
发明人： Noel Russell , Steven Sherman , John J. Hautala
IPC分类号： H01L21/425
CPC分类号： H01L21/76834 , H01J27/026 , H01J2237/0812 , H01L21/31051 , H01L21/3148 , H01L21/318 , H01L21/3185 , H01L21/76825
摘要： Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
摘要翻译：这里通常描述用于改善半导体器件中的铜/电介质界面的方法的实施例。可以描述和要求保护其他实施例。

99. 发明申请

US20100072173A1 SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING 有权
标题翻译：使用气体离子束处理的表面轮廓调整
公开(公告)号：US20100072173A1
公开(公告)日：2010-03-25
申请号：US12237063
申请日：2008-09-24
申请人： John J. Hautala
发明人： John J. Hautala
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： B44C1/227 , H01J2237/0812 , H01L21/02019
摘要： A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.
摘要翻译：描述了一种处理工件的方法。该方法包括使用气体簇离子束（GCIB）在衬底或衬底上的层的一个或多个区域上选择性地形成牺牲材料，并通过以下方式调整衬底或衬底上的表面的表面轮廓：在选择性形成之后执行蚀刻工艺。

100. 发明申请

US20100029078A1 METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS 有权
公开(公告)号：US20100029078A1
公开(公告)日：2010-02-04
申请号：US12369376
申请日：2009-02-11
申请人： Noel Russell , Frank M. Cerio, JR. , Gregory Herdt
发明人： Noel Russell , Frank M. Cerio, JR. , Gregory Herdt
IPC分类号： H01L21/02
CPC分类号： H01L23/53238 , C23C14/04 , C23C14/14 , C23C14/5833 , C23C14/5846 , C23C16/04 , C23C16/06 , C23C16/56 , H01J2237/0812 , H01L21/02074 , H01L21/76825 , H01L21/76849 , H01L21/76859 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.

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