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91. 发明授权

US07030414B2 III group nitride compound semiconductor luminescent element 失效
标题翻译： III族氮化物化合物半导体发光元件
公开(公告)号：US07030414B2
公开(公告)日：2006-04-18
申请号：US10472544
申请日：2002-04-22
申请人： Shinya Asami , Hiroshi Watanabe , Jun Ito , Naoki Shibata
发明人： Shinya Asami , Hiroshi Watanabe , Jun Ito , Naoki Shibata
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/06 , Y10S257/918
摘要： A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.
摘要翻译： III族氮化物化合物半导体发光器件包括具有包含InGaN阱层和AlGaN阻挡层的量子阱结构的多层。控制作为阱层的InGaN层的膜厚度，生长速度和生长温度以及作为阻挡层的AlGaN层的膜厚度被优化，从而提高发光器件的输出。

92. 发明授权

US07018915B2 Group III nitride compound semiconductor device and method for forming an electrode 有权
标题翻译： III族氮化物化合物半导体器件及其形成方法
公开(公告)号：US07018915B2
公开(公告)日：2006-03-28
申请号：US10860035
申请日：2004-06-04
申请人： Naoki Shibata , Toshiya Uemura , Makoto Asai , Yasuo Koide , Masanori Murakami
发明人： Naoki Shibata , Toshiya Uemura , Makoto Asai , Yasuo Koide , Masanori Murakami
IPC分类号： H01L21/28 , H01L33/00
CPC分类号： H01L33/40 , H01L21/242 , H01L21/28575 , H01L33/0095 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S5/32341
摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.
摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度的n + 3层3; Si掺杂的n型Al 0.07 N 0.93 N n包覆层4; Si掺杂的n型GaN n引导层5; 具有多重量子阱（MQW）结构的有源层6，并且包括Ga 0.1 N 1 In 0.1 N阱层61（厚度：约2nm）和Ga < SUB> 0.97在0.03N阻挡层62（厚度：约4nm）中，层61和62交替层叠; Mg掺杂的GaN p引导层7; Mg掺杂的Al 0.07 N 0.93 N p包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。该电极的接触电阻通过热处理而降低。

93. 发明授权

US06955936B2 Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors 失效
标题翻译：与p型III族氮化物半导体的电极焊盘相关的方法和装置
公开(公告)号：US06955936B2
公开(公告)日：2005-10-18
申请号：US10670518
申请日：2003-09-26
申请人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Shigemi Horiuchi
发明人： Toshiya Uemura , Naoki Shibata , Shizuyo Noiri , Shigemi Horiuchi
IPC分类号： H01L21/28 , H01L23/485 , H01L29/45 , H01L33/32 , H01L33/40 , H01L33/62 , H01L21/00
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L29/452 , H01L2224/05073 , H01L2224/05155 , H01L2224/05644 , H01L2224/05655 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/1033 , H01L2924/12041 , H01L2924/12042 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.
摘要翻译：具有p型导电的III族氮化物化合物半导体的电极焊盘包括形成在电极层上的具有第一，第二和第三金属层的三层结构。通过在第三金属层上蚀刻并覆盖第一，第二和第三金属层的侧面，形成具有暴露第三金属层的中心部分的窗口的保护膜。第二金属层由金（Au）制成。第一金属层由电离电位低于金（Au）的元素制成。第三金属由对金（Au）的保护膜具有更强的粘合性的元素制成。因此，电极焊盘的这种结构提高了保护层和第三层之间的粘合强度，并且防止了保护膜的侧面的蚀刻。此外，半导体和电极焊盘之间的接触电阻降低，因此提高了电极焊盘的欧姆特性。

94. 发明授权

US06943128B2 Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element 失效
标题翻译：降低半导体电阻的方法，降低半导体电阻的装置和半导体元件
公开(公告)号：US06943128B2
公开(公告)日：2005-09-13
申请号：US10362513
申请日：2001-08-22
申请人： Toshiaki Chiyo , Naoki Shibata
发明人： Toshiaki Chiyo , Naoki Shibata
IPC分类号： H01L21/263 , H01L21/322 , H01L33/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L33/0095 , H01L21/263 , H01L21/3228
摘要： To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatus 100 generates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plate 108 formed on the outer surface of a beam extraction window 107. A p-type semiconductor is disposed below the beam extraction window 107 such that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate 108. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed. No particular limitation is imposed on the area of the beam extraction window 107, and thus wide-area-radiation electron beams are generated, and as a result, scanning with electron beams is not required to be repeated over a long period of time.
摘要翻译：降低p型半导体的电阻或发光/受光半导体器件的工作电压。离子等离子体型电子束照射装置100产生广域辐射电子束。由此产生的电子束通过形成在光束提取窗口107的外表面上的薄金属板108辐射到外部。 p型半导体设置在光束提取窗口107的下方，使得p型半导体布置在离电子提取窗口大约20mm处，以便几乎平行于金属板108。当利用该装置对电子束照射p型半导体的表面时，可以在短时间内有效地降低p型半导体的电阻; 即在大约三分钟内，这比使用传统电子束照射装置的情况所需的时间短得多。对光束提取窗107的面积没有特别限制，因此产生广域辐射电子束，结果，不需要长时间重复用电子束进行扫描。

95. 发明授权

US06933169B2 Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US06933169B2
公开(公告)日：2005-08-23
申请号：US10370458
申请日：2003-02-24
申请人： Naoki Shibata , Makoto Asai
发明人： Naoki Shibata , Makoto Asai
IPC分类号： H01L33/14 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62 , H01L33/00
CPC分类号： H01L33/145 , H01L2924/0002 , H01L2924/00
摘要： A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light emission, to another region which does. Consequently, better current efficiency is obtained. Further, diverting current flow from the region below the electrode pad where mechanical damages are expected deters deterioration of the region. Consequently, the LED lasts longer and is a better quality product.
摘要翻译： LED具有形成在电极焊盘下面的薄的高电阻或绝缘层，以便将电流流从电极焊盘的下方的区域转移到另一区域。因此，获得更好的电流效率。此外，从预期的机械损伤的电极焊盘下方的区域转移电流可阻止该区域的劣化。因此，LED持续时间更长，更优质的产品。

96. 发明申请

US20050118825A1 Process for producing group III nitride compound semiconductor 有权
标题翻译：制备III族氮化物化合物半导体的方法
公开(公告)号：US20050118825A1
公开(公告)日：2005-06-02
申请号：US10505948
申请日：2003-02-24
申请人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
发明人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01L21/311
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.
摘要翻译：一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

97. 发明授权

US06897139B2 Group III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体器件
公开(公告)号：US06897139B2
公开(公告)日：2005-05-24
申请号：US10297840
申请日：2001-07-18
申请人： Naoki Shibata , Masanobu Senda
发明人： Naoki Shibata , Masanobu Senda
IPC分类号： H01L33/10 , H01L21/20 , H01L21/203 , H01L21/306 , H01L31/10 , H01L33/12 , H01L33/32 , H01L21/28 , H01L21/3205
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0075 , Y10S257/918
摘要： A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
摘要翻译：在基板上依次层叠钛层和氮化钛层，并且在其上进一步形成III族氮化物化合物半导体层。当在氮化钛层具有足够的膜厚的条件下除去钛层时，得到具有氮化钛层作为基板的元件。

98. 发明授权

US06891203B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06891203B2
公开(公告)日：2005-05-10
申请号：US10250772
申请日：2002-01-04
申请人： Takahiro Kozawa , Naoki Shibata
发明人： Takahiro Kozawa , Naoki Shibata
IPC分类号： H01L27/15 , H01L33/10 , H01L33/32 , H01L33/50 , H01L33/52 , H01L33/62 , H01L29/24
CPC分类号： H01L33/32 , H01L33/08 , H01L33/50 , H01L2224/49107 , H01L2224/73265 , H01L2924/01025 , H01L2924/01079 , H01L2924/12041
摘要： According to the invention, a Group III nitride compound semiconductor light-emitting element is provided with a light-emitting layer comprising two layers of different in ratio of AlGaInN composition, and emitting light with an emission peak wavelength in an ultraviolet region and light with an emission peak wavelength in a visible region. The light-emitting element and a fluorescent material excited by light in the ultraviolet region are combined to configure a light emitting device.
摘要翻译：根据本发明，III族氮化物化合物半导体发光元件设置有包含两层不同比例的AlGaInN组成的发光层，并且发射具有紫外区域中的发射峰值波长的光和具有发射峰值波长在可见光区域。将发光元件和由紫外线区域的光激发的荧光体组合，构成发光元件。

99. 发明授权

US06872965B2 Group III nitride compound semiconductor device 失效
标题翻译： III族氮化物化合物半导体器件
公开(公告)号：US06872965B2
公开(公告)日：2005-03-29
申请号：US10020460
申请日：2001-12-18
申请人： Jun Ito , Toshiaki Chiyo , Naoki Shibata , Hiroshi Watanabe , Shizuyo Asami , Shinya Asami
发明人： Jun Ito , Toshiaki Chiyo , Naoki Shibata , Hiroshi Watanabe , Shizuyo Asami , Shinya Asami
IPC分类号： H01L33/00 , H01L29/06
CPC分类号： H01L33/007 , H01L33/0075
摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
摘要翻译：在基板上形成包含金属氮化物层的底涂层。在内涂层上连续形成III族氮化物化合物半导体层。

100. 发明授权

US06623998B2 Method for manufacturing group III nitride compound semiconductor device 有权
标题翻译：制造III族氮化物化合物半导体器件的方法
公开(公告)号：US06623998B2
公开(公告)日：2003-09-23
申请号：US10304033
申请日：2002-11-26
申请人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
发明人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L31/03042 , H01L31/03046 , H01L31/184 , H01L31/1852 , H01L33/12 , H01L33/22 , H01L33/405 , H01S5/32341 , Y02E10/544 , Y10S438/978
摘要： A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.
摘要翻译：一种制造III族氮化物化合物半导体器件的方法，包括提供衬底，形成具有器件功能的III族氮化物化合物半导体层，以及在衬底和III族氮化物半导体层之间形成底涂层，底涂层具有峰和槽结构的表面。

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