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    • 91. 发明授权
    • Manipulator carrier for electron microscopes
    • 电子显微镜的机械手载体
    • US08822951B2
    • 2014-09-02
    • US13639737
    • 2010-04-07
    • Yu SunChangai RuYong Zhang
    • Yu SunChangai RuYong Zhang
    • H01J37/26H01J37/20H01J37/28H01J37/18
    • H01J37/20H01J37/185H01J37/28H01J2237/2007H01J2237/2008H01J2237/204H01J2237/206H01J2237/208
    • The present invention relates to a carrier device for transporting one or more manipulators into a vacuum specimen chamber of an electron microscope, characterized in that the carrier device comprises: (i) a platform having securing means for detachably securing the one or more manipulators to the platform, and (ii) electrical connectors secured to the platform for the electrical connection of the one or more manipulators. The present invention also relates to a method for transporting the carrier device into the vacuum specimen chamber of the electron microscope without altering the vacuum of the vacuum specimen chamber comprising transporting the carrier device of the invention through the specimen exchange chamber of the electron microscope and into the vacuum specimen chamber.
    • 本发明涉及一种用于将一个或多个操纵器输送到电子显微镜的真空样品室中的载体装置,其特征在于,载体装置包括:(i)具有用于将一个或多个操纵器可拆卸地固定到 平台,以及(ii)固定到平台的用于一个或多个操纵器的电连接的电连接器。 本发明还涉及一种用于将载体装置输送到电子显微镜的真空样品室中而不改变真空试样室的真空的方法,包括将本发明的载体装置通过电子显微镜的试样更换室输送到 真空试样室。
    • 95. 发明授权
    • Piezoelectric element having etched portion to form stepped recesses between layers and manufacturing method thereof, head gimbal assembly, and disk drive device with the same
    • 具有蚀刻部分以在层之间形成台阶凹槽的压电元件及其制造方法,头万向架组件和具有相同的盘驱动装置
    • US08194359B2
    • 2012-06-05
    • US12153618
    • 2008-05-21
    • MingGao YaoYu Sun
    • MingGao YaoYu Sun
    • G11B5/56H01L41/22
    • G11B5/5552Y10T29/42
    • A piezoelectric element comprises a first laminated structure body and a second laminated structure body. Side surfaces of the first and the second laminated structure bodies that are parallel to a laminating direction both have at least a portion etched to form a recess so that a step distance is formed between sides of the two adjacent electrode layers that are parallel to the laminating direction. The design of the step distance increases insulation resistance between the two adjacent electrode layers on the opposite surfaces of the piezoelectric layer, and lowers reject rate. The first and the second laminated structure bodies are symmetrically laminated and bonded together, thus optimizing force balancing performance. The present invention also discloses a method of manufacturing a PZT element, a HGA with the PZT element and a disk drive unit having such HGA.
    • 压电元件包括​​第一层叠结构体和第二层叠结构体。 与层叠方向平行的第一层叠结构体和第二层叠结构体的侧面均具有至少一部分被蚀刻以形成凹部,从而在平行于层叠的两个相邻的电极层的侧面之间形成台阶距离 方向。 台阶距离的设计增加了压电层相对表面上的两个相邻电极层之间的绝缘电阻,并降低了抑制率。 第一和第二层压结构体对称地层压在一起,从而优化力平衡性能。 本发明还公开了一种制造PZT元件的方法,具有PZT元件的HGA和具有这种HGA的盘驱动单元。
    • 96. 发明授权
    • Thin oxide dummy tiling as charge protection
    • 薄氧化虚拟平铺作为电荷保护
    • US07977218B2
    • 2011-07-12
    • US11645475
    • 2006-12-26
    • Cinti ChenYi HeWenmei LiZhizheng LiuMing-Sang KwanYu SunJean Yee-Mei Yang
    • Cinti ChenYi HeWenmei LiZhizheng LiuMing-Sang KwanYu SunJean Yee-Mei Yang
    • H01L21/00
    • H01L27/115H01L27/0207H01L27/11568
    • Novel fabrication methods implement the use of dummy tiles to avoid the effects of in-line charging, ESD events, and such charge effects in the formation of a memory device region region. One method involves forming at least a portion of a memory core array upon a semiconductor substrate that involves forming STI structures in the substrate substantially surrounding a memory device region region within the array. An oxide layer is formed over the substrate in the memory device region region and over the STI's, wherein an inner section of the oxide layer formed over the memory device region region is thicker than an outer section of the oxide layer formed over the STI's. A first polysilicon layer is then formed over the inner and outer sections comprising one or more dummy tiles formed over one or more outer sections and electrically connected to at least one inner section.
    • 新颖的制造方法实现使用虚拟瓦片以避免在形成存储器件区域区域中的在线充电,ESD事件和这种电荷效应的影响。 一种方法包括在半导体衬底上形成至少一部分存储器芯阵列,该半导体衬底涉及在衬底中形成基本上围绕阵列内的存储器件区域区域的STI结构。 在存储器件区域和STI之上的衬底上形成氧化物层,其中形成在存储器件区域上的氧化物层的内部部分比在STI上形成的氧化物层的外部部分更厚。 然后在内部和外部部分上形成第一多晶硅层,包括形成在一个或多个外部部分上并且电连接到至少一个内部部分的一个或多个虚拟瓦片。
    • 100. 发明申请
    • MEMS-BASED NANOPOSITIONERS AND NANOMANIPULATORS
    • 基于MEMS的纳米增塑剂和纳米颗粒
    • US20090278420A1
    • 2009-11-12
    • US12305478
    • 2007-06-21
    • Yu SunXinyu Liu
    • Yu SunXinyu Liu
    • H02N1/00
    • B25J7/00B25J9/0015
    • A MEMS-based mano manipulator or nanopositioner is provided that can achieve both sub-nanometer resolution and millimeter force output. The nanomanipulator or nanopositioner comprises a linear amplification mechanism that minifies input displacements and amplifies input forces, microactuators that drive the amplification mechanism to generate forward and backward motion, and position sensors that measure the input displacement of the amplification mechanism. The position sensors obtain position feedback enabling precise closed-loop control during nanomanipulation.
    • 提供了基于MEMS的马诺机器人或纳米定位器,其可以实现亚纳米分辨率和毫米波力输出。 纳米机械手或纳米定位器包括线性放大机构,其缩小输入位移并放大输入力,驱动放大机构以产生向前和向后运动的微致动器以及测量放大机构的输入位移的位置传感器。 位置传感器获得位置反馈,可在纳米操作期间实现精确的闭环控制。