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    • 91. 发明授权
    • Liquid crystal display having line drivers with reduced need for wide bandwidth switching
    • 具有线驱动器的液晶显示器,减少了对宽带宽切换的需求
    • US08786536B2
    • 2014-07-22
    • US11782338
    • 2007-07-24
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G09G3/36
    • G09G3/3648G09G3/3614G09G2310/0205G09G2320/0223
    • A liquid crystal display includes a substrate, a plurality of gate lines formed on the substrate, a plurality of data lines intersecting the gate lines, a plurality of thin film transistors connected to the gate lines and the data lines, a plurality of pixel electrodes connected to the thin film transistors and including a first edge parallel to the gate line and a second edge that is shorter than the first edge and is next to the first edge, and at least two gate drivers connected to mutually exclusive, interlaced subsets of the gate lines. The gate drivers may include the first gate driving circuit and the second gate driving circuit disposed opposite to each other with respect to the substrate.
    • 液晶显示器包括基板,形成在基板上的多条栅极线,与栅极线相交的多条数据线,连接到栅极线和数据线的多条薄膜晶体管,连接有多条像素电极 并且包括平行于栅极线的第一边缘和比第一边缘短并且紧邻第一边缘的第二边缘,并且至少两个栅极驱动器连接到栅极的相互排列的交错子集 线条。 栅极驱动器可以包括相对于衬底彼此相对布置的第一栅极驱动电路和第二栅极驱动电路。
    • 95. 发明授权
    • Array substrate, display panel having the same and method of manufacturing the same
    • 阵列基板,显示面板及其制造方法
    • US08471974B2
    • 2013-06-25
    • US12105015
    • 2008-04-17
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G02F1/136G02F1/1343
    • G02F1/1368G02F1/136213G02F1/13624G02F2001/136218H01L27/124H01L33/0041
    • An array substrate includes first and second gate lines, a data line, a pixel electrode, a shield electrode, a first driving transistor, a second driving transistor and a voltage-varying transistor. The pixel electrode has first and second pixel parts spaced apart from each other. The shield electrode covers a peripheral area of the pixel electrode. Each of the first and second driving transistors is electrically connected to the first and second pixel parts, respectively. The voltage-varying transistor includes a voltage-varying drain electrode having a shield-overlapping part overlapping the shield electrode. The voltage-varying transistor is electrically connected to the second gate line and the second pixel part. The voltage-varying drain electrode of the voltage-varying transistor overlaps the shield electrode to define a voltage-decreasing capacitor. The voltage difference between the first and second pixel parts of the pixel electrode may be increased.
    • 阵列基板包括第一和第二栅极线,数据线,像素电极,屏蔽电极,第一驱动晶体管,第二驱动晶体管和电压变化晶体管。 像素电极具有彼此间隔开的第一和第二像素部分。 屏蔽电极覆盖像素电极的周边区域。 第一和第二驱动晶体管中的每一个分别电连接到第一和第二像素部分。 电压变化晶体管包括具有与屏蔽电极重叠的屏蔽重叠部分的电压变化漏电极。 电压变化晶体管电连接到第二栅极线和第二像素部分。 电压变化晶体管的电压变化漏电极与屏蔽电极重叠以限定降压电容器。 可以增加像素电极的第一像素部分和第二像素部分之间的电压差。
    • 96. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US08432514B2
    • 2013-04-30
    • US13193508
    • 2011-07-28
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G02F1/1333
    • G02F1/133512G02F1/136209G02F1/136213G02F2001/136218G02F2201/40
    • A liquid crystal display includes first and second insulating substrates facing each other, and a plurality of pixels comprising a plurality of rows and a plurality of columns and divided into a first pixel group comprising only the pixels on a first row and a second pixel group comprising each of the remaining pixels on second to last rows. The pixels of the first pixel group have a first opening ratio, and the pixels of the second pixel group have a second opening ratio different from the first opening ratio. The first opening ratio is smaller than the second opening ratio, and the first opening ratio is about 60% to about 80% of the second opening ratio; and the pixels of the first pixel group but not the pixels of the second pixel group have a light interception pattern in an opening portion.
    • 液晶显示器包括彼此面对的第一绝缘基板和第二绝缘基板,以及包括多行和多列的多个像素,并分成仅包括第一行上的像素和第二像素组的第一像素组,第二像素组包括 第二到最后一行的剩余像素中的每一个。 第一像素组的像素具有第一开口比,并且第二像素组的像素具有与第一开口率不同的第二开口比。 第一开口率小于第二开口率,第一开启率为第二开口率的约60%至约80%; 并且第一像素组的像素而不是第二像素组的像素在开口部分中具有光截取图案。
    • 97. 发明授权
    • Thin film transistor array substrate and manufacturing method thereof
    • 薄膜晶体管阵列基板及其制造方法
    • US08405082B2
    • 2013-03-26
    • US13366988
    • 2012-02-06
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • H01L29/786
    • H01L29/42384H01L27/124H01L27/1288H01L29/41733H01L29/4908
    • A thin film transistor array substrate includes a gate line disposed on a substrate, the gate line comprising a gate electrode including a lower film and an upper film thicker than the lower film, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, an ohmic contact layer formed on the semiconductor layer, a data line electrically connected to a source electrode and a drain electrode formed on the ohmic contact layer, the lower film of the gate line is in contact with the gate insulating layer at a crossing portion of the gate line and the data line and the heights of the source electrode and the drain electrode are substantially the same as or less than a height of the semiconductor layer.
    • 薄膜晶体管阵列基板包括设置在基板上的栅极线,所述栅极线包括包括下部膜和比所述下部膜厚的上部膜的栅电极,形成在所述栅极线上的栅极绝缘层,形成的半导体层 在栅极绝缘层上形成有形成在半导体层上的欧姆接触层,与欧姆接触层上形成的源电极和漏电极电连接的数据线,栅极线的下部薄膜与栅绝缘层 栅极线和数据线的交叉部分的层与源电极和漏电极的高度基本上等于或小于半导体层的高度。