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91. 发明授权

US06436824B1 Low dielectric constant materials for copper damascene 有权
标题翻译：用于铜镶嵌的低介电常数材料
公开(公告)号：US06436824B1
公开(公告)日：2002-08-20
申请号：US09346526
申请日：1999-07-02
申请人： Simon Chooi , Mei Sheng Zhou , Yi Xu
发明人： Simon Chooi , Mei Sheng Zhou , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L21/02211 , H01L21/02167 , H01L21/02274 , H01L21/3125 , H01L21/314 , H01L21/76807
摘要： Novel low dielectric constant materials for use as dielectric in the dual damascene process are provided. A low dielectric constant material dielectric layer is formed by reacting a nitrogen-containing precursor and a substituted organosilane in a plasma-enhanced chemical deposition chamber. Also, novel low dielectric constant materials for use as a passivation or etch stop layer in the dual damascene process are provided. A carbon-doped silicon nitride passivation or etch stop layer having a low dielectric constraint is formed by reacting a substituted ammonia precursor and a substituted organosilane in a plasma-enhanced chemical deposition chamber. Alternatively, a silicon-carbide passivation or etch stop layer having a low dielectric constant is formed by reacting a substituted organosilane in a plasma-enhanced chemical deposition chamber. Also, an integrated process of forming passivation, dielectric, and etch stop layers for use in the dual damascene process is described.
摘要翻译：提供了用于双镶嵌工艺中的电介质的新型低介电常数材料。通过在等离子体增强化学沉积室中使含氮前体和取代的有机硅烷反应形成低介电常数材料介电层。此外，提供了用于双镶嵌工艺中的钝化或蚀刻停止层的新型低介电常数材料。通过在等离子体增强化学沉积室中使取代的氨前体和取代的有机硅烷反应形成具有低介电约束的碳掺杂的氮化硅钝化或蚀刻停止层。或者，通过在等离子体增强化学沉积室中使取代的有机硅烷反应形成具有低介电常数的碳化硅钝化或蚀刻停止层。此外，描述了形成用于双镶嵌工艺中的钝化，电介质和蚀刻停止层的集成工艺。

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