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    • 91. 发明申请
    • IMAGE READING DEVICE HAVING IMAGE SENSOR
    • 具有图像传感器的图像读取装置
    • US20100165424A1
    • 2010-07-01
    • US12630165
    • 2009-12-03
    • Takashi Maeda
    • Takashi Maeda
    • H04N1/04
    • H04N1/1017H04N1/12H04N1/193H04N2201/0081H04N2201/044
    • The image reading device includes a first document member, a white reference plate, an image sensor, a conveying section, and a control section. A first document is placed on the first document member. The image sensor reads the first document placed on the first document member. The conveying section conveys the image sensor in a first direction and a second direction opposite to the first direction. The image sensor reads the first document while being moved in the first direction. The control section executes a first control. The first control executes a process to control the image sensor to read the white reference plate, to control the conveying section to move the image sensor in the second direction, to control the conveying section to start moving the image sensor in the first direction, and to control the image sensor to read the first document, in this order.
    • 图像读取装置包括第一原稿构件,白色基准板,图像传感器,输送部和控制部。 第一个文档放置在第一个文档成员上。 图像传感器读取放置在第一个文档成员上的第一个文档。 传送部分沿与第一方向相反的第一方向和第二方向传送图像传感器。 图像传感器在沿第一方向移动时读取第一文档。 控制部执行第一控制。 第一控制执行控制图像传感器以读取白参考板的处理,以控制传送部分沿第二方向移动图像传感器,以控制传送部分开始沿第一方向移动图像传感器,以及 以此顺序控制图像传感器读取第一个文档。
    • 92. 发明申请
    • NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    • 非挥发性半导体存储器件
    • US20100124116A1
    • 2010-05-20
    • US12564576
    • 2009-09-22
    • Takashi MaedaYoshihisa Iwata
    • Takashi MaedaYoshihisa Iwata
    • G11C16/04
    • G11C16/0483G11C5/02G11C7/18G11C16/10G11C16/14H01L27/11565H01L27/11578H01L27/11582
    • Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.
    • 存储器串包括:第一半导体层,包括沿垂直于衬底的方向延伸的柱状部分; 形成为围绕所述柱状部的侧面的第一电荷存储层; 以及形成为围绕所述第一电荷存储层的第一导电层。 第一选择晶体管包括:从柱状部分的顶表面向上延伸的第二半导体层; 形成为包围第二半导体层的侧面的第二电荷存储层; 以及形成为围绕所述第二电荷存储层的第二导电层。 非易失性半导体存储装置还包括控制电路,其在从所选择的一个存储器串中读取数据之前,将电荷累积在连接到第一选择晶体管的第一选择晶体管的第二电荷存储层中 取消选择一个内存字符串。