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91. 发明申请

US20100237967A1 CIRCUIT DEVICE 失效
标题翻译：电路设备
公开(公告)号：US20100237967A1
公开(公告)日：2010-09-23
申请号：US12681284
申请日：2008-07-29
申请人： Hiroaki Ueno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hiroaki Ueno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01P3/08
CPC分类号： H01L21/02118 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/312 , H01L23/5222 , H01L23/5223 , H01L23/66 , H01L28/40 , H01L2223/6627 , H01L2223/6644 , H01L2924/0002 , H01L2924/19032 , H01L2924/3011 , H01P3/003 , H01P3/081 , H01L2924/00
摘要： A circuit device includes a substrate 11, and a transmission line 10. The transmission line 10 includes a dielectric film 13 formed on the substrate 11, and a signal line formed on the dielectric film 13. The dielectric film 13 includes a nano-composite film in which particles of a first material are dispersed in a second material.
摘要翻译：电路装置包括基板11和传输线10.传输线10包括形成在基板11上的电介质膜13和形成在电介质膜13上的信号线。电介质膜13包括纳米复合膜其中第一材料的颗粒分散在第二材料中。

92. 发明申请

US20080266012A1 METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR 审中-公开
标题翻译：控制高频散热器的方法
公开(公告)号：US20080266012A1
公开(公告)日：2008-10-30
申请号：US12109804
申请日：2008-04-25
申请人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03L7/099
CPC分类号： H03H7/40 , H05B6/686 , H05B6/705 , Y02B40/146
摘要： A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
摘要翻译：一种用于控制高频辐射器的方法包括以下步骤：（a）通过固态振荡器和天线施加高频辐射; （b）感测从天线返回到固态振荡器的一部分高频辐射; （c）基于步骤（b）中检测到的结果，调整从固态振荡器传播到天线的高频辐射来调整高频辐射的辐射/传播条件; 和（d）在步骤（c）之后，将高频辐射通过固态振荡器和天线施加到目标对象。在步骤（c）中，固态振荡器的振荡频率，由固态振荡器施加的高频辐射的功率，提供给固态振荡器的电源电压，固体振荡器的输出阻抗和天线的阻抗，或任何其他条件改变。

93. 发明授权

US06376898B1 Bipolar transistor layout with minimized area and improved heat dissipation 有权
标题翻译：双极晶体管布局，最小面积和更好的散热
公开(公告)号：US06376898B1
公开(公告)日：2002-04-23
申请号：US09631104
申请日：2000-08-01
申请人： Tomoya Uda , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara
发明人： Tomoya Uda , Daisuke Ueda , Tsuyoshi Tanaka , Manabu Yanagihara
IPC分类号： H01L2973
CPC分类号： H01L29/0692 , H01L27/0207 , H01L27/082 , H01L29/737
摘要： An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit transistors, each including a base, an emitter and a collector. In the planar layout of the device, a position of a first one of the transistors is shifted from a position of a second one of the transistors in a direction in which the banks extend. The first and second transistors belong to first and second ones of the banks, respectively, which are adjacent to each other. The second transistor is closer to the first transistor than any other transistor in the second bank.
摘要翻译：本发明的半导体集成电路器件包括在衬底上的多个晶体管组。这些堤被布置成在设备的平面布局中彼此基本平行。每个所述存储体包括多个单元晶体管，每个单元晶体管包括基极，发射极和集电极。在器件的平面布局中，晶体管中的第一个晶体管的位置沿着两个晶体管延伸的方向从第二晶体管的位置移位。第一和第二晶体管分别属于彼此相邻的第一和第二晶体管。第二晶体管比第二组中的任何其它晶体管更靠近第一晶体管。

94. 发明授权

US06365513B1 Method of making a semiconductor device including testing before thinning the semiconductor substrate 有权
标题翻译：制造半导体器件的方法包括在稀薄半导体衬底之前的测试
公开(公告)号：US06365513B1
公开(公告)日：2002-04-02
申请号：US09162232
申请日：1998-09-29
申请人： Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
发明人： Hidetoshi Furukawa , Atsushi Noma , Tsuyoshi Tanaka , Hidetoshi Ishida , Daisuke Ueda
IPC分类号： H01L2166
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
摘要翻译：在衬底中形成具有底部的通孔，然后在通孔的至少一个侧壁上形成导体层。此后，通过去除衬底的与形成通孔的衬底的另一部分相对的部分使得导体层暴露而使衬底变薄。

95. 发明授权

US07683399B2 Transistor 有权
标题翻译：晶体管
公开(公告)号：US07683399B2
公开(公告)日：2010-03-23
申请号：US11758304
申请日：2007-06-05
申请人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/0328
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/0891 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/452
摘要： There is provided a normally-off type transistor made of a nitride semiconductor. The transistor includes; an undoped GaN layer which forms a channel region; an undoped Al0.2Ga0.8N layer which is formed on the undoped GaN layer and has a band gap larger than that of the undoped GaN layer; a p-type Al0.2Ga0.8N control layer which is formed on the undoped Al0.2Ga0.8N layer, has a p-type conductivity and forms a control region; an Ni gate electrode which contacts with the p-type Al0.2Ga0.8N control layer; a Ti/Al source electrode and a Ti/Al drain electrode which are formed beside the p-type Al0.2Ga0.8N control layer; and an Ni ohmic electrode which is connected to the undoped GaN layer and serves as a hole absorbing electrode. With this transistor, it is possible to achieve a large-current operation and a high switching speed.
摘要翻译：提供了由氮化物半导体制成的常关型晶体管。晶体管包括：形成沟道区的未掺杂GaN层; 未掺杂的Al0.2Ga0.8N层，其形成在未掺杂的GaN层上，并且具有比未掺杂的GaN层的带隙大的带隙; 形成在未掺杂的Al0.2Ga0.8N层上的p型Al0.2Ga0.8N控制层具有p型导电性并形成控制区; 与p型Al0.2Ga0.8N控制层接触的Ni栅电极; 形成在p型Al0.2Ga0.8N控制层旁边的Ti / Al源电极和Ti / Al漏电极; 以及连接到未掺杂的GaN层并用作空穴吸收电极的Ni欧姆电极。利用该晶体管，可以实现大电流动作和高切换速度。

96. 发明授权

US07439621B1 Radio frequency signal processing device 失效
标题翻译：射频信号处理装置
公开(公告)号：US07439621B1
公开(公告)日：2008-10-21
申请号：US09707844
申请日：2000-11-08
申请人： Hidetoshi Ishida , Kazuo Miyatsuji , Hidetoshi Furukawa , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidetoshi Ishida , Kazuo Miyatsuji , Hidetoshi Furukawa , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/34 , H01L23/552
CPC分类号： H01L23/552 , H01L27/0207 , H01L27/088 , H01L2223/6644 , H01L2924/0002 , H01L2924/00
摘要： The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.
摘要翻译：本发明的RF器件包括：半导体衬底; 以及设置在基板上的第一和第二半导体部件。每个组件包括源电极，栅电极和漏电极。并且在两个部件之间的基板的区域中打开穿过基板的厚度方向上的多个通孔。为了增强抑制部件之间的电气干扰的效果，两个相邻的通孔之间的间隙优选小于基板的厚度。

97. 发明授权

US07148557B2 Bipolar transistor and method for fabricating the same 有权
标题翻译：双极晶体管及其制造方法
公开(公告)号：US07148557B2
公开(公告)日：2006-12-12
申请号：US10650702
申请日：2003-08-29
申请人： Manabu Yanagihara , Naohiro Tsurumi , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Manabu Yanagihara , Naohiro Tsurumi , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L27/082
CPC分类号： H01L29/66318 , H01L29/0817 , H01L29/42304 , H01L29/7371
摘要： A bipolar transistor includes: a first semiconductor layer having an intrinsic base region and an extrinsic base region; and a second semiconductor layer having a portion located on the intrinsic base region to be an emitter region or a collector region. A capacitive film is provided on the extrinsic base region using the same semiconductor material as that for the second semiconductor layer. A base electrode is formed on the first semiconductor layer to cover the capacitive film and the extrinsic base region.
摘要翻译：双极晶体管包括：具有本征基极区域和外部基极区域的第一半导体层; 以及第二半导体层，其具有位于本征基极区上的作为发射极区域或集电极区域的部分。使用与第二半导体层相同的半导体材料在非本征基极区域上提供电容膜。在第一半导体层上形成基极以覆盖电容膜和外部基极区。

98. 发明授权

US07064359B2 Switching semiconductor device and switching circuit 有权
标题翻译：开关半导体器件和开关电路
公开(公告)号：US07064359B2
公开(公告)日：2006-06-20
申请号：US10912567
申请日：2004-08-06
申请人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidetoshi Ishida , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/7787 , Y10S257/918
摘要： A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0
摘要翻译：开关半导体器件包括形成在包括碳化硅或蓝宝石的单晶衬底上的第一复合层，并且包括通式为N 1 Ga 1-x N，其中 0 <= x <= 1; 形成在第一化合物层上的第二化合物层，并且包含通式为Y 1，Y z，Ga 1-y z N，其中0 < = y <= 1，0

99. 发明授权

US06982479B2 Semiconductor package with leadframe inductors 失效
标题翻译：带引线框电感的半导体封装
公开(公告)号：US06982479B2
公开(公告)日：2006-01-03
申请号：US10669219
申请日：2003-09-24
申请人： Masaaki Nishijima , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Masaaki Nishijima , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/02
CPC分类号： H01L23/49861 , H01L23/057 , H01L23/481 , H01L23/49541 , H01L23/66 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01032 , H01L2924/10162 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/16195 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2224/45099 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device in which an inductance element formed in a resin package has stable characteristics, impedance matching is achieved easily, and the stability of high-frequency characteristics is improved, more particularly a semiconductor chip sealed within mold resin having a conductor lead extending from an inside of the mold resin to an outside. A portion of the conductor lead inside the mold resin forms an inductance element, at least a part of which is narrower than the external portion of the conductor outside the mold resin.
摘要翻译：形成在树脂封装中的电感元件的半导体器件具有稳定的特性，容易实现阻抗匹配，提高了高频特性的稳定性，更具体地说，密封在具有从模具树脂内部到外面。导体引线在模具树脂内的一部分形成电感元件，其电感元件的至少一部分比模具树脂外导体的外部部分窄。

100. 发明申请

US20050026393A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050026393A1
公开(公告)日：2005-02-03
申请号：US10861464
申请日：2004-06-07
申请人： Yutaka Hirose , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yutaka Hirose , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L21/30 , H01L21/306 , H01L21/46 , H01L21/78
CPC分类号： H01L21/30612 , H01L21/78
摘要： A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the thermally decomposed layer is removed with the substrate kept bonded with the semiconductor layer.
摘要翻译：在基板的一个表面上形成的半导体层被照射来自基板的另一个表面的光，以热分解半导体层与基板接触的区域的一部分，从而形成热分解层。之后，用与半导体层保持接合的基板去除热分解层。

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