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    • 98. 发明授权
    • Semiconductor laser apparatus
    • 半导体激光装置
    • US06693941B1
    • 2004-02-17
    • US09656700
    • 2000-09-07
    • Yoji OkazakiToshiaki Fukunaga
    • Yoji OkazakiToshiaki Fukunaga
    • H01S30941
    • H01S5/041B82Y20/00H01S3/109H01S5/0207H01S5/02248H01S5/141H01S5/183H01S5/18369H01S5/18377H01S5/34326H01S5/34333
    • A semiconductor laser apparatus comprises a pumping beam source and a surface emission type of semiconductor device. The pumping beam source is constituted of a semiconductor laser device, in which a composition selected from the group consisting of InGaN and GaN is employed in an active layer. The surface emission type of semiconductor device comprises a substrate, and an active layer, which is constituted of a composition selected from the group consisting of InGaAlP and InGaP and is provided on the substrate. The surface emission type of semiconductor device is pumped by the pumping beam source to produce a laser beam. The semiconductor laser apparatus produces the laser beam having a wavelength of a red region or an ultraviolet region and undergoes oscillation in a fundamental mode with a high reliability and a high efficiency and up to a high output power.
    • 半导体激光装置包括泵浦光束源和表面发射型半导体器件。 泵浦光源由半导体激光器件构成,其中在有源层中采用选自由InGaN和GaN组成的组的组成。 半导体器件的表面发射型包括由选自InGaAlP和InGaP的组合物构成的衬底和有源层,并且设置在衬底上。 半导体器件的表面发射类型由泵浦光源泵浦以产生激光束。 半导体激光装置产生具有红色区域或紫外线区域的波长的激光束,并以高可靠性,高效率和高输出功率在基模中进行振荡。
    • 99. 发明授权
    • Laser-diode-pumped laser apparatus in which Pr3+-doped laser medium is pumped with GaN-based compound laser diode
    • 用GaN基复合激光二极管泵浦Pr3 +掺杂激光介质的激光二极管泵浦激光装置
    • US06490309B1
    • 2002-12-03
    • US09621241
    • 2000-07-21
    • Yoji OkazakiTakayuki Katoh
    • Yoji OkazakiTakayuki Katoh
    • H01S30941
    • B82Y20/00H01S3/0941H01S3/109H01S3/1613H01S3/1653H01S5/02248H01S5/024H01S5/02415H01S5/02438H01S5/32341H01S5/34333
    • In a laser-diode-pumped laser apparatus, a solid-state laser crystal doped with at least one rare-earth element including at least Pr3+ is pumped with a laser diode, and emits laser light. In the first aspect, the laser diode has an active layer made of one of an InGaN, InGaNAs, and GaNAs materials, and an optical wavelength conversion element converts the solid-state laser light into ultraviolet laser light by wavelength conversion. In the second aspect, the solid-state laser crystal is codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+. In the third aspect, instead of the solid-state laser crystal, an optical fiber codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+ is pumped with a GaN-based compound laser diode. In the fourth aspect, an optical fiber codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3, Pm3, and Nd3+ amplifies incident light having a wavelength which is identical with a wavelength of fluorescence generated by pumping of the optical fiber with a GaN-based compound laser diode.
    • 在激光二极管泵浦激光装置中,掺杂有至少一种至少含有Pr3 +的稀土元素的固体激光晶体用激光二极管泵浦并发射激光。 在第一方面中,激光二极管具有由InGaN,InGaNA和GaNA材料中的一种构成的有源层,并且光波长转换元件通过波长转换将固态激光转换成紫外激光。 在第二方面中,固态激光晶体与Pr3 +和Er3 +,Ho3 +,Dy3 +,Eu3 +,Sm3 +,Pm3 +和Nd3 +中的至少一种共掺杂。 在第三方面中,代替固态激光晶体,用GaN基复合激光二极管泵浦与Pr3 +和Er3 +,Ho3 +,Dy3 +,Eu3 +,Sm3 +,Pm3 +和Nd3 +中的至少一种共用的光纤。 在第四方面中,与Pr3 +和Er3 +,Ho3 +,Dy3 +,Eu3 +,Sm3,Pm3和Nd3 +中的至少一种共用的光纤放大了与通过泵浦光学产生的荧光波长相同的波长的入射光 光纤与GaN基复合激光二极管。