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91. 发明授权

US08349403B2 Vapor-phase process apparatus, vapor-phase process method, and substrate 失效
公开(公告)号：US08349403B2
公开(公告)日：2013-01-08
申请号：US13231446
申请日：2011-09-13
申请人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
发明人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
IPC分类号： C23C16/00 , C23C16/455 , H01L21/302
CPC分类号： C23C16/455 , C23C16/4401 , C23C16/45517 , C23C16/45519 , C23C16/45565 , C30B25/165 , C30B29/403 , H01J37/3244 , H01J37/32449 , H01J37/32541 , Y10T428/31504
摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

92. 发明授权

US08349083B2 Vapor-phase process apparatus, vapor-phase process method, and substrate 失效
标题翻译：气相工艺装置，气相工艺方法和基板
公开(公告)号：US08349083B2
公开(公告)日：2013-01-08
申请号：US13270891
申请日：2011-10-11
申请人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
发明人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
IPC分类号： C23C16/00 , C23C16/455 , H01L21/302
CPC分类号： C23C16/455 , C23C16/4401 , C23C16/45517 , C23C16/45519 , C23C16/45565 , C30B25/165 , C30B29/403 , H01J37/3244 , H01J37/32449 , H01J37/32541 , Y10T428/31504
摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
摘要翻译：获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室）。处理室允许反应气体在其中流动。多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。

93. 发明授权

US08215214B2 Workpiece gripping method and workpiece centering apparatus 失效
标题翻译：工件夹紧方法和工件定心装置
公开(公告)号：US08215214B2
公开(公告)日：2012-07-10
申请号：US12752866
申请日：2010-04-01
申请人： Shigetsugu Sakai , Masahiro Yamane , Toshio Ueda , Satoshi Nozaki
发明人： Shigetsugu Sakai , Masahiro Yamane , Toshio Ueda , Satoshi Nozaki
IPC分类号： B23B13/12 , B23Q3/06
CPC分类号： B23B25/06 , B23B3/168 , B23B2270/12 , B23Q17/2291 , B23Q2230/002 , Y10T82/2597 , Y10T82/27 , Y10T279/26
摘要： A workpiece centering apparatus 1 is provided on a lathe having a spindle 33, an independent chuck 34, and upper and lower tool rests 37, 41, and has sandwiching members 11, 12 mounted to the tool rests 37, 41, respectively, and capable of contacting the outer peripheral surface of a workpiece W, and a centering control section 15 for moving the tool rests 37, 41 and thereby moving the sandwiching members 11, 12 to their respective centering positions which are the positions of the sandwiching members 11, 12 when the center position of a portion to be machined of the workpiece W coincides with the axis of the spindle 33 in a state where the portion to be machined of the workpiece W is being sandwiched and held by the sandwiching members 11, 12, and then causing the independent chuck 34 to grip the workpiece W.
摘要翻译：工件对中装置1设置在具有主轴33，独立卡盘34以及上下刀架37,41的车床上，并且具有分别安装到刀架37,41的夹持构件11,12，并且能够与工件W的外周面接触的定心控制部15以及用于使工具架37,41移动的定心控制部15，由此将夹持构件11,12移动到作为夹持构件11,12的位置的各定心位置当待加工部件的工件W的中心位置与工件W的被加工部分被夹持构件11,12夹持并保持的状态下与主轴33的轴线重合时，使独立卡盘34夹持工件W.

94. 发明授权

US08153454B2 Fabrication apparatus and fabrication method of semiconductor device produced by heating substrate 失效
标题翻译：通过加热衬底制造的半导体器件的制造装置和制造方法
公开(公告)号：US08153454B2
公开(公告)日：2012-04-10
申请号：US12209397
申请日：2008-09-12
申请人： Masaki Ueno , Toshio Ueda , Yoko Watanabe
发明人： Masaki Ueno , Toshio Ueda , Yoko Watanabe
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L21/6875 , H01L21/68764
摘要： A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.
摘要翻译：提供一种半导体器件的制造装置和制造方法，使基板的温度分布变得均匀。半导体装置的制造装置包括保持基板的基座，设置在基座的背面的加热器，位于基板和基座之间的支撑构件，其包括支撑部，以及位于基座和支撑构件之间的间隔件。间隔件具有对应于所述支撑部分所在位置的开口，位于支撑构件的相对的面侧。

95. 发明申请

US20120003142A1 VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE 失效
标题翻译：蒸汽相工艺装置，蒸汽相工艺方法和基材
公开(公告)号：US20120003142A1
公开(公告)日：2012-01-05
申请号：US13231446
申请日：2011-09-13
申请人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
发明人： Eiryo Takasuka , Toshio Ueda , Toshiyuki Kuramoto , Masaki Ueno
IPC分类号： C23C16/00 , C01B21/06 , C23F1/00
CPC分类号： C23C16/455 , C23C16/4401 , C23C16/45517 , C23C16/45519 , C23C16/45565 , C30B25/165 , C30B29/403 , H01J37/3244 , H01J37/32449 , H01J37/32541 , Y10T428/31504
摘要： A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
摘要翻译：获得即使进行不同类型的处理也能够令人满意地保持处理质量的气相处理装置和气相处理方法。气相处理装置包括处理室，用作多个气体导入部的气体供给口，以及气体供给部（气体供给部件，管道，流量控制装置，管道，缓冲室）。处理室允许反应气体在其中流动。多个气体供给口沿着反应气体的流动方向形成在处理室的壁面（上壁）中。气体供给部能够以与多个气体供给口中的一个气体供给口不同的一个气体供给口和另一个气体供给口中的每一个以不同的流量向处理室供给气体。

96. 发明申请

US20100047933A1 SUBSTRATE, SUBSTRATE INSPECTING METHOD AND METHODS OF MANUFACTURING AN ELEMENT AND A SUBSTRATE 审中-公开
标题翻译：基板，基板检查方法及制造元件和基板的方法
公开(公告)号：US20100047933A1
公开(公告)日：2010-02-25
申请号：US12608413
申请日：2009-10-29
申请人： Takao NAKAMURA , Toshio Ueda , Takashi Kyono
发明人： Takao NAKAMURA , Toshio Ueda , Takashi Kyono
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01L22/20
摘要： A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity.
摘要翻译：提供了一种基板检查方法，其允许通过确定多个层的质量以及制造基板的方法和使用基板检查方法的元件来检查在其表面处设置多个层的多个基板。基板检查方法包括准备在其主表面上设置有多个层的基板，成膜步骤，局部蚀刻步骤以及检查步骤或组成分析步骤的步骤。在该步骤中，通过至少部分去除外延层，在设置有衬底的主表面的外延层的区域中形成凹陷。在检查步骤中，在暴露于凹部的层上进行检查。

97. 再颁专利

USRE40769E1 Method and apparatus for controlling the gray scale of plasma display device 有权
标题翻译：用于控制等离子体显示装置的灰度级的方法和装置
公开(公告)号：USRE40769E1
公开(公告)日：2009-06-23
申请号：US09938303
申请日：2001-08-24
申请人： Keishin Nagaoka , Masaya Tajima , Yoshimasa Awata , Yoshikazu Kanazawa , Toshio Ueda
发明人： Keishin Nagaoka , Masaya Tajima , Yoshimasa Awata , Yoshikazu Kanazawa , Toshio Ueda
IPC分类号： G09G3/28 , G09G5/10
CPC分类号： G09G3/2946 , G09G3/2022 , G09G2320/0271 , G09G2320/0626 , G09G2330/021 , G09G2360/145 , G09G2360/16
摘要： A method of controlling the gray scale of a plasma display device has a forming step of forming a frame for an image by a plurality of subframes each having a different brightness, a setting step of setting the number of sustain emissions of each subframe in an anti-geometrical progression corresponding to the brightness of each subframe, and a displaying step of displaying the image on the plasma display device by a gray scale display having a specific brightness. The number of sustain emissions in each subframe is set individually by the each subframe, and this establishes a linear relation between the gray level and the corresponding brightness Therefore, an enhancement of display quality of the plasma display device can be realized. A method of controlling the gray scale of a plasma display device has a forming step of forming a frame for an image by a plurality of subframes each having a different brightness, a setting step of setting the number of sustain emissions of each subframe in an anti-geometrical progression corresponding to the brightness of each subframe, and a displaying step of displaying the image on the plasma display device by a gray scale display having a specific brightness. The number of sustain emission in each subframe is set individually by the each subframe, and this establishes a linear relation between the gray level and the corresponding brightness. Therefore, an enhancement of display quality of the plasma display device can be realized.
摘要翻译： <？delete-start id =“DEL-S-00001”date =“20090623”？一种控制等离子体显示装置的灰度级的方法具有通过多个子帧形成图像帧的形成步骤具有不同亮度的设置步骤，将每个子帧的维持发射次数设置为与每个子帧的亮度对应的反几何级数的设置步骤，以及通过灰度显示在等离子体显示装置上显示图像的显示步骤具有特定的亮度。每个子帧中的维持发射次数由每个子帧分别设定，这就建立了灰度级与对应的亮度之间的线性关系。因此，可以实现等离子体显示装置的显示质量的提高。 end id =“DEL-S-00001”？> <？insert-start id =“INS-S-00001”date =“20090623”？>等离子体显示装置的灰度级的控制方法具有：通过具有不同亮度的多个子帧形成用于图像的帧;设置步骤，将每个子帧的维持发射次数设置为与每个子帧的亮度相对应的反几何级数;以及显示步骤，显示步骤通过具有特定亮度的灰度显示器在等离子体显示装置上的图像。每个子帧中的每个子帧的维持发射次数由每个子帧分别设置，这就建立了灰度级与对应的亮度之间的线性关系。因此，可以实现等离子体显示装置的显示质量的提高。<？insert-end id =“INS-S-00001”→>

98. 发明申请

US20080284687A1 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US20080284687A1
公开(公告)日：2008-11-20
申请号：US12218065
申请日：2008-07-11
申请人： Ayahito Kojima , Shigeki Kameyama , Hirohito Kuriyama , Yoshikazu Kanazawa , Toshio Ueda
发明人： Ayahito Kojima , Shigeki Kameyama , Hirohito Kuriyama , Yoshikazu Kanazawa , Toshio Ueda
IPC分类号： G09G3/28
CPC分类号： G09G3/2944 , G09G2320/046 , G09G2320/0626 , G09G2330/02 , G09G2330/021 , G09G2330/045 , G09G2360/16
摘要： A display apparatus, that can prevent thermal destruction and burning with a simple structure, has been disclosed. In the apparatus it is judged that there is possibility of a pattern, whose area with high brightness is small, being displayed frequently, when a state in which the total light emission pulse number remains large occurs with high frequency, and if such a state is detected, the total light emission pulse number (sustain frequency) is reduced to prevent the thermal destruction and burning.
摘要翻译：已经公开了能够以简单的结构防止热破坏和燃烧的显示装置。在该装置中，当总发光脉冲数保持较大的状态以高频发生时，判断为频繁地显示亮度高的区域的图案的可能性高，并且如果这样的状态为检测到的总发光脉冲数（维持频率）被减少以防止热破坏和燃烧。

99. 发明授权

US07423611B2 Display device capable of controlling power consumption without generating degradation in image quality, and method of driving the display device 失效
标题翻译：能够在不产生图像质量劣化的情况下控制功率消耗的显示装置，以及驱动显示装置的方法
公开(公告)号：US07423611B2
公开(公告)日：2008-09-09
申请号：US10107319
申请日：2002-03-28
申请人： Takayuki Ooe , Toshio Ueda , Kosaku Toda
发明人： Takayuki Ooe , Toshio Ueda , Kosaku Toda
IPC分类号： G09G3/28 , G09G3/10
CPC分类号： G09G3/2944 , G09G2310/0224 , G09G2320/0247 , G09G2320/0626 , G09G2330/02 , G09G2330/021 , G09G2360/16
摘要： A method of driving a display device has a calculating step, a comparing step, and a controlling step. The calculating step calculates a total number of light-emission pulses within a field, based on an average of display load factors in at least two fields, the comparing step compares the calculated number of light-emission pulses with a number of light-emission pulses based on power consumption, and the controlling step controls a smaller display load factor as the total number of light-emission pulses within a field.
摘要翻译：驱动显示装置的方法具有计算步骤，比较步骤和控制步骤。计算步骤基于至少两个场中的显示负载因子的平均值计算场内的发光脉冲的总数，该比较步骤将计算出的发光脉冲数与多个发光脉冲进行比较基于功耗，并且控制步骤将较小的显示负载因子控制为场内的发光脉冲的总数。

100. 发明申请

US20070278485A1 Substrate, substrate inspecting method and methods of manufacturing an element and a substrate 审中-公开
标题翻译：基板，基板检查方法以及元件和基板的制造方法
公开(公告)号：US20070278485A1
公开(公告)日：2007-12-06
申请号：US11806561
申请日：2007-06-01
申请人： Takao Nakamura , Toshio Ueda , Takashi Kyono
发明人： Takao Nakamura , Toshio Ueda , Takashi Kyono
IPC分类号： H01L23/58
CPC分类号： H01L22/10 , H01L22/20
摘要： A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity.
摘要翻译：提供了一种基板检查方法，其允许通过确定多个层的质量以及制造基板的方法和使用基板检查方法的元件来检查在其表面处设置多个层的多个基板。基板检查方法包括准备在其主表面上设置有多个层的基板，成膜步骤，局部蚀刻步骤以及检查步骤或组成分析步骤的步骤。在该步骤中，通过至少部分去除外延层，在设置有衬底的主表面的外延层的区域中形成凹陷。在检查步骤中，在暴露于凹部的层上进行检查。

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