会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明申请
    • INFORMATION PROCESSING DEVICE, METHOD, PROGRAM, AND INTEGRATED CIRCUIT
    • 信息处理设备,方法,程序和集成电路
    • US20110173460A1
    • 2011-07-14
    • US13119524
    • 2009-10-07
    • Takayuki ItoHideki MatsushimaHisashi TakayamaTomoyuki Haga
    • Takayuki ItoHideki MatsushimaHisashi TakayamaTomoyuki Haga
    • G06F12/14
    • H04L9/0836H04L9/0894H04L2209/60
    • The aim is to provide high-speed data synchronization. To achieve the aim, in data synchronization using a plurality of key databases with respect to same data pieces, a key for one key database, which has been determined in advance, is used for updating the data piece managed under the other key database. This reduces the number of key decryption operations. A key management software 116, which manages a key database A120 and a key database B121 each having a tree structure, determines whether to perform data synchronization when requested by an upper-level application to perform data encryption, and performs synchronization of encrypted data by using a key of the other database which has been determined in advance. This reduces the number of times the encrypted key is loaded onto a cryptographic processing unit 114, and realizes high-speed cryptographic processing on data.
    • 目的是提供高速数据同步。 为了实现上述目的,在使用多个密钥数据库的数据同步中,使用已经被预先确定的一个密钥数据库的密钥来更新在另一密钥数据库下管理的数据片段。 这减少了密钥解密操作的数量。 管理密钥数据库A120的密钥管理软件116和具有树状结构的密钥数据库B121,在上层应用程序请求时进行数据同步,进行数据加密,通过使用加密数据进行同步, 预先确定的其他数据库的一个关键字。 这减少了加密密钥加载到加密处理单元114上的次数,并实现对数据的高速加密处理。
    • 97. 发明授权
    • Semiconductor device with extension structure and method for fabricating the same
    • 具有延伸结构的半导体器件及其制造方法
    • US07781848B2
    • 2010-08-24
    • US11704924
    • 2007-02-12
    • Takayuki ItoKyoichi SuguroKouji Matsuo
    • Takayuki ItoKyoichi SuguroKouji Matsuo
    • H01L29/78
    • H01L21/823857H01L21/823814H01L21/823842
    • A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.
    • 半导体器件包括半导体区域,源极区域,漏极区域,源极延伸区域,漏极延伸区域,第一栅极绝缘膜,第二栅极绝缘膜和栅极电极。 源极区域,漏极区域,源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子%以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上,并且含有浓度为20原子%至57原子%之间的氮。 栅电极形成在第二栅绝缘膜上。
    • 98. 发明申请
    • SEMICONDUCTOR DEVICE WITH EXTENSION STRUCTURE AND METHOD FOR FABRICATING THE SAME
    • 具有延伸结构的半导体器件及其制造方法
    • US20100193874A1
    • 2010-08-05
    • US12757658
    • 2010-04-09
    • Takayuki ItoKyoichi SuguroKouji Matsuo
    • Takayuki ItoKyoichi SuguroKouji Matsuo
    • H01L27/092
    • H01L21/823857H01L21/823814H01L21/823842
    • A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.
    • 半导体器件包括半导体区域,源极区域,漏极区域,源极延伸区域,漏极延伸区域,第一栅极绝缘膜,第二栅极绝缘膜和栅极电极。 源极区域,漏极区域,源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子%以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上,并且含有浓度为20原子%至57原子%之间的氮。 栅电极形成在第二栅绝缘膜上。