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91. 发明授权

US5308999A MOS FET having a thin film SOI structure 失效
标题翻译： MOS FET具有薄膜SOI结构
公开(公告)号：US5308999A
公开(公告)日：1994-05-03
申请号：US021857
申请日：1993-02-24
申请人： Hiroshi Gotou
发明人： Hiroshi Gotou
IPC分类号： H01L27/12 , H01L29/423 , H01L29/78 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/42384
摘要： The breakdown voltage of an MIS field effect transistor having an SOI structure is improved by forming a gate electrode on the top surface and two side surfaces of a channel region of the SOI layer and by partially extending the gate electrode toward the inside under the bottom of the channel region such the gate electrode is not completly connected.
摘要翻译： SOI结构的MIS场效应晶体管的击穿电压通过在SOI层的沟道区域的上表面和两个侧面上形成栅电极，并且通过在栅极电极的下方诸如栅电极的沟道区域未完全连接。

92. 发明授权

US5264721A Insulated-gate FET on an SOI-structure 失效
标题翻译：绝缘栅FET在SOI结构上
公开(公告)号：US5264721A
公开(公告)日：1993-11-23
申请号：US824913
申请日：1992-01-23
申请人： Hiroshi Gotou
发明人： Hiroshi Gotou
IPC分类号： H01L21/336 , H01L29/786 , H01L29/78
CPC分类号： H01L29/66772 , H01L29/78654
摘要： An SOI-type insulated-gate FET is formed such that an electrical resistance across a pn-junction of the source region is less than that across a pn-junction of the drain region. This is accomplished by providing the FET with a metal dopant, such as aluminum or tungsten; by excessively doping the source region; by providing an amorphous source region; or by providing a layer formed of a material having a different thermal expansion coefficient from the thermal expansion coefficient of the material forming the source region, upon the source region. In the thus fabricated transistor, there is generated a carrier generation center or a precipitation of the impurities at a pn-junction formed between the source region and the semiconductor substrate. Thus, a current path is formed across the pn-junction of the source region in both the forward and reverse directions of a diode of the pn-junction, so as to substantially eliminate the potential difference between the source region and the semiconductor substrate. Accordingly, a kink phenomenon in the drain voltage-current characteristics is eliminated.
摘要翻译：形成SOI型绝缘栅FET，使得源极区的pn结上的电阻小于漏极区的pn结上的电阻。这通过为FET提供诸如铝或钨的金属掺杂剂来实现; 过度掺杂源区; 通过提供非晶质源区; 或者通过在源区域上提供由具有不同热膨胀系数的材料形成的层与形成源极区域的材料的热膨胀系数。在这样制造的晶体管中，在源极区域和半导体衬底之间形成的pn结处产生载流子生成中心或杂质析出。因此，在pn结的二极管的正向和反向两端的源极区的pn结上形成电流通路，从而基本上消除了源区和半导体衬底之间的电位差。因此，消除了漏极电压 - 电流特性中的扭结现象。

93. 发明授权

US5196365A Method of making semiconductor memory device having stacked capacitor 失效
标题翻译：制造具有堆叠电容器的半导体存储器件的方法
公开(公告)号：US5196365A
公开(公告)日：1993-03-23
申请号：US779548
申请日：1991-10-18
申请人： Hiroshi Gotou
发明人： Hiroshi Gotou
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10844 , H01L27/10817
摘要： A semiconductor memory device includes a substrate, a transfer transistor formed on the substrate and including drain and source regions, and a charge storage capacitor electrically coupled to one of the drain and source regions of the transfer transistor. The charge storage capacitor has a conductive base layer which is electrically coupled to the one of the drain and source regions of the transfer transistor, at least one conductive side wall connected to one end of the base layer, a plurality of fin-shaped parts which extend from the side wall in a plurality of levels generally parallel to the base layer, a dielectric layer which covers exposed surfaces of the base layer, the side wall and the fin-shaped parts, and a conductor layer which is formed on the dielectric layer to form an opposed electrode of the charge storage capacitor. The fin-shaped parts and the side wall form a storage electrode of the charge storage capacitor.
摘要翻译：半导体存储器件包括衬底，形成在衬底上并包括漏极和源极区的转移晶体管，以及电耦合到转移晶体管的漏极和源极区之一的电荷存储电容器。电荷存储电容器具有与传输晶体管的漏极和源极区域中的一个电耦合的导电基极层，连接到基底层的一端的至少一个导电侧壁，多个鳍状部分，从大致平行于基底层的多个级别的侧壁延伸，覆盖基底层，侧壁和鳍状部分的暴露表面的电介质层和形成在电介质层上的导体层以形成电荷存储电容器的相对电极。鳍形部分和侧壁形成电荷存储电容器的存储电极。

94. 发明授权

US5126810A Semiconductor memory device having stacked capacitor 失效
标题翻译：具有堆叠电容器的半导体存储器件
公开(公告)号：US5126810A
公开(公告)日：1992-06-30
申请号：US742261
申请日：1991-08-07
申请人： Hiroshi Gotou
发明人： Hiroshi Gotou
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10844 , H01L27/10817
摘要： A semiconductor memory device includes a substrate, a transfer transistor formed on the substrate and including drain and source regions, and a charge storage capacitor electrically coupled to one of the drain and source regions of the transfer transistor. The charge storage capacitor has a conductive base layer which is electrically coupled to the one of the drain and source regions of the transfer transistor, at least one conductive side wall connected to one end of the base layer, a plurality of fin-shaped parts which extend from the side wall in a plurality of levels generally parallel to the base layer, a dielectric layer which covers exposed surfaces of the base layer, the side wall and the fin-shaped parts, and a conductor layer which is formed on the dielectric layer to form an opposed electrode of the charge storage capacitor. The fin-shaped parts and the side wall form a storage electrode of the charge storage capacitor.
摘要翻译：半导体存储器件包括衬底，形成在衬底上并包括漏极和源极区的转移晶体管，以及电耦合到转移晶体管的漏极和源极区之一的电荷存储电容器。电荷存储电容器具有与传输晶体管的漏极和源极区域中的一个电耦合的导电基极层，连接到基底层的一端的至少一个导电侧壁，多个鳍状部分，从大致平行于基底层的多个级别的侧壁延伸，覆盖基底层，侧壁和鳍状部分的暴露表面的电介质层和形成在电介质层上的导体层以形成电荷存储电容器的相对电极。鳍形部分和侧壁形成电荷存储电容器的存储电极。

95. 发明申请

US20230132661A1 SET OF INKJET INKS, INKJET IMAGE FORMING METHOD, AND INKJET IMAGE FORMING APPARATUS 有权
公开(公告)号：US20230132661A1
公开(公告)日：2023-05-04
申请号：US18050343
申请日：2022-10-27
申请人： Hiroshi Gotou , Toshiyuki Kobashi , Daisuke Ozaki , Juichi Furukawa
发明人： Hiroshi Gotou , Toshiyuki Kobashi , Daisuke Ozaki , Juichi Furukawa
IPC分类号： C09D11/40 , D06P5/30 , C09D11/54 , C09D11/38
摘要： A set of inkjet inks used for forming an image by application of an ink on a cloth is provided. The set includes an ink and a pre-processing fluid. The pre-processing fluid contains water, a compound that flocculates an anionic compound, and at least one emulsified sizing agent.

96. 发明申请

US20220298373A1 INK SET, IMAGE FORMING METHOD, AND IMAGE FORMING APPARATUS 有权
公开(公告)号：US20220298373A1
公开(公告)日：2022-09-22
申请号：US17697323
申请日：2022-03-17
申请人： Hiroshi Gotou , Toshiyuki Kobashi , Juichi Furukawa , Daisuke Ozaki
发明人： Hiroshi Gotou , Toshiyuki Kobashi , Juichi Furukawa , Daisuke Ozaki
IPC分类号： C09D11/40 , C09D11/38 , C09D11/12 , C09D11/54 , B41M5/00 , B41J2/21
摘要： An ink set contains white ink and color ink, wherein the difference in static surface tension between the white ink and the color ink is 1.0 mN/m or less and each difference in dynamic surface tension between the white ink and the color ink at each bubble life time of 15 msec, 150 msec, and 1,500 msec at 25 degrees C. is 1.0 mN/m or less as measured by maximum bubble pressure technique.

97. 发明授权

US10233345B2 Ink set, recording device, and method of recording 有权
公开(公告)号：US10233345B2
公开(公告)日：2019-03-19
申请号：US15448014
申请日：2017-03-02
申请人： Yuuki Yokohama , Hiroshi Gotou , Kaori Toyama , Masayuki Fukuoka
发明人： Yuuki Yokohama , Hiroshi Gotou , Kaori Toyama , Masayuki Fukuoka
IPC分类号： B41J2/01 , C09D11/40 , C09D11/322 , C09D11/36 , C09D11/106 , C09D11/324
摘要： An ink set includes an ink A including water, a first organic solvent, and a first pigment and an ink B including water, a second organic solvent, a second pigment, and a urethane resin particle. The first organic solvent includes at least one of N,N-dimethyl-β-buthoxy propionamide, N,N-dimethyl-β-methoxy propionamide, and 3-ethyl-3-hydroxymethyl oxetane and has a mixing solubility parameter A of 10.00 to less than 13.00 and the second organic solvent has a mixing solubility parameter B of 13.00 to 16.00.

98. 发明授权

US10190007B2 Ink, ink container, image forming method, image forming apparatus, and image formed matter 有权
公开(公告)号：US10190007B2
公开(公告)日：2019-01-29
申请号：US15149440
申请日：2016-05-09
申请人： Hiroshi Gotou , Masahiko Ishikawa
发明人： Hiroshi Gotou , Masahiko Ishikawa
IPC分类号： C09D11/322 , C09D11/38
摘要： Provided is an ink containing a colorant, an organic solvent, and water, wherein the ink contains as the organic solvent, at least one kind of an organic solvent having a solubility parameter of greater than or equal to 9 but less than 11.8, wherein a content of the organic solvent having a solubility parameter of greater than or equal to 9 but less than 11.8 is greater than or equal to 20% by mass of a total amount of the ink, wherein a dynamic surface tension A of the ink at 25° C. at a surface lifetime, measured by a maximum foaming pressure method, of 15 msec is less than or equal to 34.0 mN/m, and wherein the dynamic surface tension A and a static surface tension B of the ink at 25° C. satisfy a formula of 10.0%≤[(A−B)/(A+B)]×100≤19.0%.

99. 发明授权

US10131805B2 Ink, ink stored container, inkjet recording apparatus, and printed matter 有权
公开(公告)号：US10131805B2
公开(公告)日：2018-11-20
申请号：US15189673
申请日：2016-06-22
申请人： Keita Katoh , Hiroshi Gotou , Yuuki Yokohama , Hiromi Sakaguchi , Yukiko Takamura
发明人： Keita Katoh , Hiroshi Gotou , Yuuki Yokohama , Hiromi Sakaguchi , Yukiko Takamura
IPC分类号： C09D11/02 , C09D11/322 , B41J2/175 , C09D11/12 , C09D11/30 , C09D11/54 , B41J2/01 , B41M5/50 , C09D11/037
摘要： Provided is an ink containing a wax, a plurality of organic solvents, and water, wherein the plurality of organic solvents include a compound having a solubility parameter of 9 or greater but 11 or less and a compound having a saturated vapor pressure at 100° C. of 20 mmHg or greater but 400 mmHg or less.

100. 发明授权

US10113078B2 Ink discharge device and ink discharge method 有权
公开(公告)号：US10113078B2
公开(公告)日：2018-10-30
申请号：US15783180
申请日：2017-10-13
申请人： Keita Katoh , Hiroshi Gotou , Takahiro Yoshida , Akihiko Matsuyama , Masahiko Ishikawa , Yoshiki Yanagawa
发明人： Keita Katoh , Hiroshi Gotou , Takahiro Yoshida , Akihiko Matsuyama , Masahiko Ishikawa , Yoshiki Yanagawa
IPC分类号： G01D11/00 , C09D11/107 , B41J2/145 , B41J2/14 , C09D11/322 , C09D11/033 , C09D11/36 , C09D11/326
摘要： An ink discharge device including an ink, an ink discharge head, and a negative pressure generator is provided. The ink comprises water, a colorant, an organic solvent X having a solubility parameter of from 8.9 to 12.0 and comprising no glycol ether compound, and a copolymer comprising a structural unit represented by the following formula (1): where R1 represents a hydrogen atom or methyl group and Y represents an alkylene group having 2 to 18 carbon atoms. The ink discharge head includes a nozzle to discharge the ink, a plurality of individual liquid chambers in communication with the nozzle, a flow-in channel to let the ink flow into the individual liquid chambers, and a flow-out channel to let the ink flow out from the individual liquid chambers. The negative pressure generator is configured to generate a negative pressure that lets the ink flow out from the individual liquid chambers.

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