专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US4277304A Ion source and ion etching process 失效
标题翻译：离子源和离子蚀刻工艺
公开(公告)号：US4277304A
公开(公告)日：1981-07-07
申请号：US87041
申请日：1979-10-22
申请人： Yasuhiro Horiike , Haruo Okano , Masahiro Shibagaki , Katsuo Kadono
发明人： Yasuhiro Horiike , Haruo Okano , Masahiro Shibagaki , Katsuo Kadono
IPC分类号： H01L21/302 , H01J27/14 , H01J37/08 , H01L21/306 , H01J17/04
CPC分类号： H01J37/08 , H01J27/14
摘要： An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magnets located in a position or positions corresponding to a portion of the cathode surrounded by the looped slit or slits and forming a magnetic field having a direction at substantially right angles to the direction of an electric field formed by applying a voltage between the anode and cathode, a gas which is introduced into the vacuum container through an inlet means formed in the vacuum container being made into gas plasma by means of the electric and magnetic fields at right angles to each other, whereby positive ions in the gas plasma will be taken out through the looped slit or slits.
摘要翻译：适合用于例如制造工艺中的蚀刻工艺的离子源。半导体器件，包括真空容器，设置在真空容器中的阳极，具有与所述阳极相对形成的一个或多个环状狭缝的阴极和位于与阴极的一部分相对应的位置或位置的一个或多个位置，环形狭缝或狭缝，并形成磁场，该磁场具有与通过在阳极和阴极之间施加电压而形成的电场的方向基本上成直角的方向，通过形成在入口装置中的入口装置引入到真空容器中的气体真空容器通过彼此成直角的电场和磁场制成气体等离子体，由此气体等离子体中的正离子将通过环形狭缝或狭缝取出。

IPRDB

热门服务

关于我们

友情链接

联系方式