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91. 发明授权

US08154059B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08154059B2
公开(公告)日：2012-04-10
申请号：US12910150
申请日：2010-10-22
申请人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
发明人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
IPC分类号： H01L29/80 , H01L21/00 , H01L21/338 , H01L21/31
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译：本发明的目的是防止TFT（薄膜晶体管）的劣化。通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

92. 发明授权

US06858898B1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06858898B1
公开(公告)日：2005-02-22
申请号：US09532915
申请日：2000-03-22
申请人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
发明人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
IPC分类号： H01L21/00 , H01L21/20 , H01L21/77 , H01L27/01 , H01L27/12 , H01L29/786 , H01L31/0392
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译：本发明的目的是防止TFT（薄膜晶体管）的劣化。通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

93. 发明授权

US06632708B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06632708B2
公开(公告)日：2003-10-14
申请号：US09739269
申请日：2000-12-19
申请人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Mitinori Iwai
发明人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Mitinori Iwai
IPC分类号： H01L2184
CPC分类号： H01L27/12 , G02F1/13454 , H01L27/1248
摘要： To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
摘要翻译：为了提供在短时间内在玻璃基板上形成氮化硅膜和氧化硅膜的分层膜而不需要多个成膜室的方法。在薄膜晶体管中，在半导体层（ PDAT> 13 >）之间形成包括氮氧化硅膜（ PDAT> 12 PDAT>）和基底（ 11 ）。氮氧化硅膜具有连续变化的氮或氧的组成比。 TFT的电特性得到改善

94. 发明授权

US6160679A Recording medium device for use with a tape cartridge having an auxiliary memory viewable through a cartridge discrimination opening 失效
标题翻译：用于具有可通过盒识别开口观看的辅助存储器的带盒的记录介质装置
公开(公告)号：US6160679A
公开(公告)日：2000-12-12
申请号：US973760
申请日：1998-04-13
申请人： Katsumi Maekawa , Joichi Daiba , Satoshi Ota , Toshiya Kurokawa , Mitsunori Sakama , Masanori Abe , Takao Hiramoto
发明人： Katsumi Maekawa , Joichi Daiba , Satoshi Ota , Toshiya Kurokawa , Mitsunori Sakama , Masanori Abe , Takao Hiramoto
IPC分类号： G11B15/07 , G11B15/675 , G11B23/087 , G11B23/32 , G11B23/38
CPC分类号： G11B15/07 , G11B15/67547 , G11B23/08714 , G11B23/0875 , G11B23/32 , G11B23/38
摘要： A recording medium device including a cartridge body within which a tape-shaped recording medium on which information signals are recorded is accomodated, wherein a cartridge discrimination opening (hole) indicating the specification of the recording medium device is provided at the bottom surface side of the cartridge body and positioned in the corner of the portion of the back (face) side opposite to the front side of the cartridge body from which the tape shaped recording medium is drawn out. In addition, a recording and/or reproducing apparatus with a detection mechanism for detecting the cartridge discrimination opening (hole) is provided. The cartridge discrimination opening (hole) is provided in the area where it was previously known to provide plural recording medium specification openings (holes) but which are not provided in the cartridge body.
摘要翻译： PCT No.PCT / JP96 / 01823 Sec。 371日期：1998年4月13日 102（e）1998年4月13日PCT PCT 1996年7月1日PCT公布。第WO97 / 02565号公报日期1997年1月23日一种包括盒体的记录介质装置，其中记录有信息信号的带状记录介质被容纳在其中，其中指示记录介质装置的规格的盒鉴别开口（孔）位于盒主体的底表面侧并且位于与盒体的前侧相反的背面（面）侧的部分的角部中，带状记录介质从该主体的前侧被抽出。此外，还提供了一种具有用于检测盒识别开口（孔）的检测机构的记录和/或再现装置。盒识别开口（孔）设置在以前已知的提供多个记录介质规格开口（孔）但不设置在盒体中的区域中。

95. 发明申请

US20120187411A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20120187411A1
公开(公告)日：2012-07-26
申请号：US13440200
申请日：2012-04-05
申请人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
发明人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
IPC分类号： H01L33/36
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译：本发明的目的是防止TFT（薄膜晶体管）的劣化。通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

96. 发明授权

US07504343B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07504343B2
公开(公告)日：2009-03-17
申请号：US11418717
申请日：2006-05-05
申请人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
发明人： Masahiko Hayakawa , Mitsunori Sakama , Satoshi Toriumi
IPC分类号： H01L21/31
CPC分类号： H01L21/02686 , G02F1/1368 , H01L21/2026 , H01L21/3145 , H01L21/7624 , H01L27/12 , H01L27/1218 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/3248 , H01L27/3258 , H01L29/78603 , H01L29/78621
摘要： An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
摘要翻译：本发明的目的是防止TFT（薄膜晶体管）的劣化。通过在TFT的半导体层和衬底之间形成氧化硅氮化物膜，可以防止通过BT测试的TFT的劣化，其中氧化硅氮化物膜的浓度为N与 Si的浓度。

97. 发明授权

US06730992B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06730992B2
公开(公告)日：2004-05-04
申请号：US10367819
申请日：2003-02-19
申请人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Mitinori Iwai
发明人： Mitsunori Sakama , Noriko Ishimaru , Masahiko Miwa , Mitinori Iwai
IPC分类号： H01L484
CPC分类号： H01L27/12 , G02F1/13454 , H01L27/1248
摘要： To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
摘要翻译：为了提供在短时间内在玻璃基板上形成氮化硅膜和氧化硅膜的分层膜而不需要多个成膜室的方法。在薄膜晶体管中，使用相同的室，在半导体层（13）和基板（11）之间形成包含氮氧化硅膜（12）的层状膜。氮氧化硅膜具有连续变化的氮或氧的组成比。因此TFT的电特性得到改善。

98. 发明授权

US06634562B1 Recording and reproducing apparatus, recording medium adapter apparatus, and recording and reproducing method 失效
标题翻译：记录和再现装置，记录介质适配器装置和记录和再现方法
公开(公告)号：US06634562B1
公开(公告)日：2003-10-21
申请号：US09609357
申请日：2000-07-05
申请人： Masahiko Noro , Atsuhiro Kumagai , Mitsunori Sakama
发明人： Masahiko Noro , Atsuhiro Kumagai , Mitsunori Sakama
IPC分类号： G06K1904
CPC分类号： G11B23/0316 , G11B23/0305 , G11B23/0308 , G11B23/0317
摘要： There is provided a recording and reproducing apparatus, a recording medium adapter apparatus, and a recording and reproducing method which allows exit from the power saving mode without conducting the reset using ejection and re-insertion of a recording medium. An FD drive device 20 includes a switch for detecting that an FD type card adapter 1 which conducts data processing to record data onto a memory card or reproduce data from the memory card has been inserted, and a luminous element 30 which conducts communication of predetermined control data to a light receiving element 8 of the FD type card adapter 1 in order to effect control related to data recording or reproducing operation. As a result, it is possible to restore the FD type card adapter from the power saving mode and shift the FD type card adapter to an arbitrary control state, without conducting the reset using ejection and re-insertion of a recording medium.
摘要翻译：提供了一种记录和再现装置，记录介质适配器装置和记录和再现方法，其允许从省电模式退出，而不用使用记录介质的弹出和重新插入来进行复位。 FD驱动装置20包括用于检测进行数据处理以将数据记录到存储卡上或从存储卡再现数据的FD型卡适配器1的开关，以及进行预定控制的通信的发光元件30 数据传送到FD型卡适配器1的光接收元件8，以便实现与数据记录或再现操作有关的控制。结果，可以从省电模式恢复FD型卡适配器，并且可以将FD型卡适配器转换到任意控制状态，而不用使用记录介质的弹出和重新插入来进行复位。

99. 发明授权

US5791578A Recording medium device with memory terminals and shutter sized and shaped in relation thereto 失效
标题翻译：具有存储器端子的记录介质装置和与其相关的尺寸和形状的快门
公开(公告)号：US5791578A
公开(公告)日：1998-08-11
申请号：US635951
申请日：1996-07-01
申请人： Toshiya Kurokawa , Joichi Daiba , Satoshi Ota , Mitsunori Sakama , Katsumi Maekawa , Tadashi Ozue
发明人： Toshiya Kurokawa , Joichi Daiba , Satoshi Ota , Mitsunori Sakama , Katsumi Maekawa , Tadashi Ozue
IPC分类号： G11B15/675 , G11B23/087 , G11B23/30 , G11B23/36 , G11B27/11 , G03B23/02
CPC分类号： G11B27/11 , G11B15/67549 , G11B23/08714 , G11B23/30 , G11B23/36 , G11B2220/655 , G11B2220/90 , G11B23/08735
摘要： A recording medium device has a cartridge main body housing a recording medium configured for recording information signals. The recording medium device includes the cartridge main body housing the magnetic tape, contact terminals arranged facing the outside of the cartridge main body for functioning as electrical contacts for a drive unit, and a shutter member arranged on the cartridge main body for opening and closing the contact terminals. The contact terminals face outwardly of the cartridge main body via an opening formed in the outer peripheral wall of the cartridge main body. When not loaded on the drive unit, the shutter member is held at a position closing the opening formed in the cartridge main body. When loaded on the drive unit, the shutter member is moved by a shutter opening mechanism mounted in the drive unit to a position uncovering the opening for exposing the contact terminals to the outside of the cartridge main body. The shutter member is perpetually biased by a biasing unit in a direction of closing the opening. Since the contact terminals are covered by the shutter member, they are safeguarded against deposition of dust and dirt.
摘要翻译： PCT No.PCT / JP95 / 01774 Sec。 371日期：1996年7月1日 102（e）日期1996年7月1日PCT提交1995年9月6日PCT公布。出版物WO96 / 08013 日期1996年3月14日记录介质装置具有容纳记录介质的盒主体，该记录介质配置用于记录信息信号。记录介质装置包括容纳磁带的盒主体，面向盒主体外侧的接触端子，用作用于驱动单元的电触头，以及布置在盒主体上用于打开和关闭接触端子。接触端子通过形成在盒主体的外周壁上的开口朝向盒主体的外侧。当未装载在驱动单元上时，挡板部件保持在关闭形成在盒主体中的开口的位置。当装载在驱动单元上时，闸板构件通过安装在驱动单元中的挡板打开机构移动到露出开口的位置，以将接触端子暴露于盒主体的外部。活门构件通过偏置单元在关闭开口的方向上永久地偏置。由于接触端子被挡板部件覆盖，所以防止灰尘和污垢的沉积。

100. 发明授权

US5712744A Magnetic tape loading device 失效
标题翻译：磁带装载装置
公开(公告)号：US5712744A
公开(公告)日：1998-01-27
申请号：US728161
申请日：1996-10-09
申请人： Mitsunori Sakama , Joichi Daiba , Satoshi Ota , Toshiya Kurokawa , Katsumi Maekawa
发明人： Mitsunori Sakama , Joichi Daiba , Satoshi Ota , Toshiya Kurokawa , Katsumi Maekawa
IPC分类号： G11B15/665
CPC分类号： G11B15/6656
摘要： A magnetic tape loading device of which the main body portion may be reduced in size and which assures positive contact under pressure of a magnetic tape with a sliding surface of a drum-shaped magnetic head. The loading device includes a driving unit 21, a first transmission unit 22 driven by the driving unit 21, a first magnetic tape actuating unit 25 moved by the first transmission unit 22 for pulling out a magnetic tape 4 placed on a tape supply reel 8 and a second transmission unit 23 driven by the first transmission unit 22. The loading device also includes second magnetic tape actuating units 26, 27 moved by the second transmission unit 23 for pulling out the magnetic tape 4 for abutting the tape thus pulled out against a sliding surface 90 of a drum-shaped magnetic head 18, a third transmission unit 24 driven by the second transmission unit 23 and third magnetic tape actuating units 28, 29 moved by the third transmission unit 24 for pulling out the magnetic tape placed on a tape take-up reel 9.
摘要翻译：一种磁带装载装置，其主体部分的尺寸可以减小，并且在具有鼓形磁头的滑动表面的磁带的压力下确保正面接触。装载装置包括驱动单元21，由驱动单元21驱动的第一传动单元22，由第一传动单元22移动的第一磁带致动单元25，用于拉出放置在磁带供带盘8上的磁带4，由第一传输单元22驱动的第二传输单元23.加载装置还包括由第二传输单元23移动的第二磁带致动单元26,27，用于拉出磁带4，用于抵靠由此拉出的磁带鼓形磁头18的表面90，由第二传输单元23驱动的第三传输单元24和由第三传输单元24移动的第三磁带致动单元28,29，用于拉出放置在磁带上的磁带 -up卷轴9。

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