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91. 发明申请

US20110114948A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110114948A1
公开(公告)日：2011-05-19
申请号：US13012844
申请日：2011-01-25
申请人： Shunpei Yamazaki , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L29/12 , H01L29/06
CPC分类号： H01L27/1266 , H01L21/3081 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
摘要翻译：本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。

92. 发明授权

US07745829B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07745829B2
公开(公告)日：2010-06-29
申请号：US12230954
申请日：2008-09-09
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

93. 发明授权

US07601601B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07601601B2
公开(公告)日：2009-10-13
申请号：US12078214
申请日：2008-03-28
申请人： Shunpei Yamazaki , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/3081 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
摘要翻译：本发明的目的是提供一种制造具有晶体半导体层的半导体器件的高产率的方法，即使是具有低的上限极限的衬底。在半导体衬底的一部分中形成沟槽以形成具有突出部分的半导体衬底，并且形成接合层以覆盖突出部分。此外，在形成接合层之前，用加速离子照射作为突出部分的半导体衬底的一部分以形成脆性层。在接合层和支撑基板接合在一起之后，进行用于分离半导体衬底的热处理，以在支撑衬底上提供半导体层。选择性地蚀刻半导体层，形成半导体元件并制造半导体器件。

94. 发明授权

US07588970B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07588970B2
公开(公告)日：2009-09-15
申请号：US11421922
申请日：2006-06-02
申请人： Hideto Ohnuma , Shigeharu Monoe , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shigeharu Monoe , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1214 , H01L27/124 , H01L27/1288 , H01L29/66757 , H01L29/78624
摘要： The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film and has a function of reducing light intensity is employed in a photolithography step of forming a gate electrode, an asymmetrical resist pattern having a region with a thick thickness and a region with a thickness thinner than that of the above region on one side is formed, a gate electrode having a stepped portion is formed, and an LDD region is formed in a self-alignment manner by injecting an impurity element to the semiconductor layer through the region with a thin thickness of the gate electrode.
摘要翻译：本发明提供一种TFT，其以自对准方式提供至少一个LDD区域，而不形成侧壁间隔物并增加制造步骤的数量。在形成栅电极的光刻步骤中使用具有由衍射光栅图案或半透射膜形成的辅助图案并具有降低光强度的功能的光掩模或掩模版，具有形成厚度厚的区域和具有比一面上述区域的厚度薄的区域，形成具有台阶部分的栅电极，并且通过注入杂质以自对准方式形成LDD区域元件通过具有薄的栅电极厚度的区域到半导体层。

95. 发明授权

US07459354B2 Method for manufacturing a semiconductor device including top gate thin film transistor and method for manufacturing an active matrix device including top gate thin film transistor 有权
标题翻译：用于制造包括顶栅薄膜晶体管的半导体器件的方法和用于制造包括顶栅极薄膜晶体管的有源矩阵器件的方法
公开(公告)号：US07459354B2
公开(公告)日：2008-12-02
申请号：US10896906
申请日：2004-07-23
申请人： Shunpei Yamazaki , Hideto Ohnuma , Tamae Takano , Toru Mitsuki
发明人： Shunpei Yamazaki , Hideto Ohnuma , Tamae Takano , Toru Mitsuki
IPC分类号： H01L33/00
CPC分类号： H01L21/02672 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L29/04 , H01L29/78621
摘要： The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.
摘要翻译：通过激光照射的结晶方法在所得到的结晶半导体膜的表面形成多个凸部（脊），劣化了膜质量。因此，提供一种使用这种半导体膜形成脊形半导体膜的方法和半导体器件是一个问题。本发明的特征在于，通过热处理方法（RTA法：快速热退火法）加热半导体膜，以在通过激光使半导体膜结晶之后照射从灯光源发射的光，从而减小脊。

96. 发明授权

US07288789B2 Semiconductor device having thin film transistor and light-shielding film 有权
标题翻译：具有薄膜晶体管和遮光膜的半导体器件
公开(公告)号：US07288789B2
公开(公告)日：2007-10-30
申请号：US10446187
申请日：2003-05-28
申请人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
发明人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
IPC分类号： H01L31/0376 , H01L31/20 , H01L31/036
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L27/3244 , H01L27/3248 , H01L27/3265 , H01L27/3272 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L51/5246 , H01L51/5284 , H01L2227/323
摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.
摘要翻译：一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同重视对抗热门运营商和TFT的对策，重点针对当前的对策。这使得可以实现高性能的半导体器件。此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

97. 发明申请

US20060261336A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20060261336A1
公开(公告)日：2006-11-23
申请号：US11383694
申请日：2006-05-16
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

98. 发明申请

US20050258443A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20050258443A1
公开(公告)日：2005-11-24
申请号：US11121070
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Aya Anzai , Masayuki Sakakura , Hiromichi Godo
发明人： Shunpei Yamazaki , Hideto Ohnuma , Aya Anzai , Masayuki Sakakura , Hiromichi Godo
IPC分类号： H01L27/15 , H01L27/32 , H01L33/00 , H05B33/12
CPC分类号： H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5262
摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.
摘要翻译：本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。形成栅极绝缘层以覆盖第二绝缘层和半导体层。在栅绝缘层上形成栅电极。形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。形成第二层间绝缘层以覆盖第一绝缘层和开口。在开口上形成发光元件。

99. 发明授权

US06967129B2 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06967129B2
公开(公告)日：2005-11-22
申请号：US10456633
申请日：2003-06-09
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： G09F9/30 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/786 , H01L51/50 , H01L21/00
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

100. 发明申请

US20050255617A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20050255617A1
公开(公告)日：2005-11-17
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
IPC分类号： H01J1/62 , H01J63/04 , H01L21/00 , H01L21/77 , H01L27/32 , H01L51/52 , H05B33/10
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译：在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质。通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。第一基底绝缘膜在开口部的底面露出。随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。

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