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91. 发明申请

US20110068438A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110068438A1
公开(公告)日：2011-03-24
申请号：US12952925
申请日：2010-11-23
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI
IPC分类号： H01L29/06
CPC分类号： G06K19/07749 , G06K19/07728 , G06K19/0775 , H01L23/49855 , H01L23/66 , H01L24/48 , H01L24/73 , H01L2223/6677 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/19041 , H01Q1/2216 , H01Q23/00 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In inlets used for ID tags and the like, a defective connection between an integrated circuit part and an antenna is suppressed by improvement of tolerance for a bending or a pressing pressure. The integrated circuit part includes a semiconductor chip and a multilayer substrate having a concave portion. The semiconductor chip is mounted on the bottom of the concave portion. The multilayer substrate includes a connection electrode at the top surface and a connection electrode connected to the semiconductor chip on the bottom of the concave portion. The connection electrode on the bottom of the concave portion is connected to the connection electrode at the top surface by a penetration electrode inside a multilayer substrate. By such a configuration, the semiconductor chip is connected to the antenna.
摘要翻译：在用于ID标签等的入口中，通过提高弯曲或按压压力的公差来抑制集成电路部件和天线之间的有缺陷的连接。集成电路部分包括半导体芯片和具有凹部的多层基板。半导体芯片安装在凹部的底部。多层基板包括在顶表面处的连接电极和连接到凹部底部的半导体芯片的连接电极。凹部的底部的连接电极通过多层基板内的贯通电极在顶面与连接电极连接。通过这样的结构，将半导体芯片连接到天线。

92. 发明申请

US20110062461A1 ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE 有权
标题翻译：有机电致发光显示装置
公开(公告)号：US20110062461A1
公开(公告)日：2011-03-17
申请号：US12949165
申请日：2010-11-18
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI
IPC分类号： H01L33/08
CPC分类号： H01L51/5237 , H01L27/3244 , H01L51/524 , H01L51/5259 , H01L51/5275 , H01L51/5281 , H01L2251/5315 , H05B33/04
摘要： An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.
摘要翻译：其中有源矩阵型的有机EL显示器件，其中形成在单晶半导体衬底上的绝缘栅场效应晶体管与有机EL层重叠; 其特征在于，单晶半导体衬底（图4中的413）保持在由隔板（401）和由绝缘材料形成的盖板（405）限定的空白空间（414）中，并且包装材料（404），用于粘合床和盖板; 并且空置空间（414）填充有惰性气体和干燥剂，由此防止有机EL层氧化。

93. 发明申请

US20110057186A1 TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：晶体管和显示器件
公开(公告)号：US20110057186A1
公开(公告)日：2011-03-10
申请号：US12869278
申请日：2010-08-26
申请人： Shunpei YAMAZAKI , Toshinari SASAKI , Junichiro SAKATA , Masashi TSUBUKU
发明人： Shunpei YAMAZAKI , Toshinari SASAKI , Junichiro SAKATA , Masashi TSUBUKU
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/458 , H01L29/4908 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
摘要翻译：本发明的目的是制造使用具有良好的电特性和高可靠性的薄膜晶体管作为开关元件的高度可靠的显示装置。在包括非晶氧化物半导体的底栅薄膜晶体管中，在已经通过热处理脱水或脱氢的氧化物半导体层与源电极层和漏电极层中的每一个之间形成具有晶体区的氧化物导电层，使用金属材料形成。因此，可以减小氧化物半导体层与源极电极层和漏极电极层中的每一个之间的接触电阻; 因此，可以提供具有良好电特性的薄膜晶体管和使用该薄膜晶体管的高度可靠的显示装置。

94. 发明申请

US20110043513A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20110043513A1
公开(公告)日：2011-02-24
申请号：US12915086
申请日：2010-10-29
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , G09G3/20
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

95. 发明申请

US20110031501A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20110031501A1
公开(公告)日：2011-02-10
申请号：US12904536
申请日：2010-10-14
申请人： Hideomi SUZAWA , Shunpei YAMAZAKI
发明人： Hideomi SUZAWA , Shunpei YAMAZAKI
IPC分类号： H01L33/16
CPC分类号： H01L51/56 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L51/5206 , H01L51/5234 , H01L51/5246 , H01L51/5259 , H01L2251/5315 , H01L2251/5323
摘要： According to one feature of the present invention, a display device is manufactured according to the steps of forming a semiconductor layer; forming a gate insulating layer over the semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming source and drain electrode layers in contact with the semiconductor layer; forming a first electrode layer electrically connected to the source or drain electrode layer; forming an inorganic insulating layer over part of the first electrode layer, the gate electrode layer, the source electrode layer, and the drain electrode layer; subjecting the inorganic insulating layer and the first electrode layer to plasma treatment; forming an electroluminescent layer over the inorganic insulating layer and the first electrode layer which are subjected to plasma treatment; and forming a second electrode layer over the electroluminescent layer.
摘要翻译：根据本发明的一个特征，根据形成半导体层的步骤制造显示装置; 在所述半导体层上形成栅极绝缘层; 在所述栅绝缘层上形成栅电极层; 形成与半导体层接触的源极和漏极电极层; 形成电连接到所述源极或漏极电极层的第一电极层; 在所述第一电极层，所述栅极电极层，所述源极电极层和所述漏极电极层的一部分上形成无机绝缘层; 对无机绝缘层和第一电极层进行等离子体处理; 在经过等离子体处理的无机绝缘层和第一电极层上形成电致发光层; 以及在所述电致发光层上形成第二电极层。

96. 发明申请

US20110027968A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110027968A1
公开(公告)日：2011-02-03
申请号：US12899993
申请日：2010-10-07
申请人： Shunpei YAMAZAKI , Hideto OHNUMA , Tetsuya KAKEHATA
发明人： Shunpei YAMAZAKI , Hideto OHNUMA , Tetsuya KAKEHATA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/31662 , H01L21/76254 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L27/1214 , H01L27/1229 , H01L29/66772 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2224/13099 , H01L2224/29099 , H01L2224/80001
摘要： A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.
摘要翻译：一种半导体器件，包括多个场效应晶体管，所述多个场效应晶体管在其间具有绝缘表面的衬底上层叠有平坦化层，所述多个场效应晶体管中的半导体层与半导体衬底分离，并且所述半导体层被结合到形成在具有形成在平坦化层上的绝缘表面或绝缘层的衬底上的绝缘层。

97. 发明申请

US20110006301A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20110006301A1
公开(公告)日：2011-01-13
申请号：US12832333
申请日：2010-07-08
申请人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
发明人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

98. 发明申请

US20110003461A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20110003461A1
公开(公告)日：2011-01-06
申请号：US12882301
申请日：2010-09-15
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/268 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1274 , H01L29/78621
摘要： An SOI substrate having a single crystal semiconductor layer with high surface planarity is manufactured. A semiconductor substrate is doped with hydrogen, whereby a damaged region which contains large quantity of hydrogen is formed. After a single crystal semiconductor substrate and a supporting substrate are bonded together, the semiconductor substrate is heated, whereby the single crystal semiconductor substrate is separated in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation plane of the single crystal semiconductor layer separated from the single crystal semiconductor substrate, laser beam irradiation is performed. By irradiation with a laser beam, the single crystal semiconductor layer is melted, whereby planarity of the surface of the single crystal semiconductor layer is improved and re-single-crystallization is performed.
摘要翻译：制造具有高表面平面度的单晶半导体层的SOI衬底。半导体衬底被掺杂氢，由此形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合在一起之后，半导体衬底被加热，从而在受损区域中分离出单晶半导体衬底。将加热的高纯度氮气喷射到与单晶半导体衬底分离的单晶半导体层的分离面上，进行激光束照射。通过用激光束照射，单晶半导体层被熔化，从而提高了单晶半导体层的表面的平坦度，并进行了再结晶。

99. 发明申请

US20100328989A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AND METHOD FOR WRITING MEMORY ELEMENT 有权
标题翻译：半导体器件及其制造方法及其写入元件的方法
公开(公告)号：US20100328989A1
公开(公告)日：2010-12-30
申请号：US12874574
申请日：2010-09-02
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： G11C11/00 , H01L51/00
CPC分类号： G11C13/00 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/77
摘要： An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic compound layer between first and second conductive layers. When melting, an organic compound of the organic compound layer aggregates due to surface tension of the organic compound. By applying a voltage to the first and second conductive layers, writing to the memory element is carried out.
摘要翻译：本发明的目的是提供一种性能更高，可靠性更高的存储器件以及以低成本和高产率提供存储器件的半导体器件。本发明的半导体器件具有包括第一和第二导电层之间的绝缘层和有机化合物层的存储元件。当熔融时，有机化合物层的有机化合物由于有机化合物的表面张力而聚集。通过向第一和第二导电层施加电压，执行对存储元件的写入。

100. 发明申请

US20100327352A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100327352A1
公开(公告)日：2010-12-30
申请号：US12821481
申请日：2010-06-23
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1203 , H01L21/28052 , H01L21/76895 , H01L21/84 , H01L29/41766 , H01L29/41775 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66636
摘要： An object is to reduce the resistance of each member included in a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit. A semiconductor device including an n-channel FET and a p-channel FET which are provided over a single crystal semiconductor substrate with an insulating layer interposed therebetween and are isolated by an element isolation insulating layer. In the semiconductor device, each FET includes a channel formation region including a semiconductor material, a conductive region which is in contact with the channel formation region and includes the semiconductor material, a metal region in contact with the conductive region, a gate insulating layer in contact with the channel formation region, a gate electrode in contact with the gate insulating layer, and a source or drain electrode partly including the metal region.
摘要翻译：目的是降低晶体管中包括的每个元件的电阻，以提高晶体管的导通电流，并提高集成电路的性能。一种包括n沟道FET和p沟道FET的半导体器件，其设置在单晶半导体衬底上，绝缘层插入其间并被元件隔离绝缘层隔离。在半导体装置中，每个FET包括：包含半导体材料的沟道形成区域，与沟道形成区域接触并包括半导体材料的导电区域，与导电区域接触的金属区域，栅极绝缘层与沟道形成区域接触，与栅极绝缘层接触的栅极电极和部分地包括金属区域的源极或漏极电极。

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