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91. 发明授权

US5631222A Endothelin-antagonizing peptide 失效
标题翻译：内皮素拮抗肽
公开(公告)号：US5631222A
公开(公告)日：1997-05-20
申请号：US382013
申请日：1995-02-10
申请人： Kenji Shibata , Toshiyuki Suzawa , Motoo Yamasaki , Takeo Tanaka , Eiji Tsukuda , Koji Yamada , Tetsuji Ohno
发明人： Kenji Shibata , Toshiyuki Suzawa , Motoo Yamasaki , Takeo Tanaka , Eiji Tsukuda , Koji Yamada , Tetsuji Ohno
IPC分类号： A61K38/00 , C07K7/06 , C07K14/575 , C07K5/12 , C07K7/08
CPC分类号： C07K7/06 , C07K14/57536 , A61K38/00
摘要： Disclosed is a peptide compound represented by the following formula (I):R.sup.1 -R.sup.2 -R.sup.3 -R.sup.4 -R.sup.5 -R.sup.6 -R.sup.7 -R.sup.8 -R.sup.9 -R.sup.10 -R.sup.11 -R.sup.12 -Phe-R.sup.14 -R.sup.15 -R.sup.16 -R.sup.17 -R.sup.18 -Ile-R.sup.20 -Z SEQ. ID NO. 64, (I)wherein R.sup.1-12, R.sup.14-18, and R.sup.20 are as defined in the specification.
摘要翻译： PCT No.PCT / JP94 / 01011 Sec。 371日期1995年2月10日 102（e）1995年2月10日PCT PCT 1994年6月23日PCT公布。第WO95 / 00546号公报日期：1995年5月1日公开了由下式（I）表示的肽化合物：R1-R2-R3-R4-R5-R6-R7-R8-R9-R10-R11-R12-Phe-R14-R15-R16- R17-R18-Ile-R20-Z SEQ。证件号码。 64，（I）其中R1-12，R14-18和R20如说明书中所定义。

92. 发明授权

US4740827A CMOS semiconductor device 失效
标题翻译： CMOS半导体器件
公开(公告)号：US4740827A
公开(公告)日：1988-04-26
申请号：US913383
申请日：1986-09-30
申请人： Youichiro Niitsu , Shinji Taguchi , Kenji Shibata , Kouichi Kanzaki
发明人： Youichiro Niitsu , Shinji Taguchi , Kenji Shibata , Kouichi Kanzaki
IPC分类号： H01L21/762 , H01L21/8238 , H01L27/092 , H01L29/78 , H01L27/02 , H01L27/12 , H01L29/06
CPC分类号： H01L21/823878 , H01L21/7621 , H01L27/0921
摘要： In the CMOS semiconductor device having an epitaxial layer, a trench with an appropriate depth is formed in the vicinity of a boundary between a range in which a MOS transistor is formed and a well range in which another MOS transistor is formed; the inner wall surface of the trench is covered with a thermal oxide film; and the trench is buried with a semiconductor substance, so that two CMOS transistors can be electrically isolated by the trench to increase the latch-up holding voltage beyond a supply voltage (e.g. 5 v). Therefore, the latch-up proof resistance can be increased to protect the device from noise which otherwise would break the device. Further, the trench depth is shallower than the low impurity atom concentration layer (epitaxial layer) or 3 .mu.m but deeper than a value obtained by subtracting 2 .mu.m from the above thickness or 3 .mu.m.
摘要翻译：在具有外延层的CMOS半导体器件中，在形成MOS晶体管的范围与形成另一MOS晶体管的阱范围之间的边界附近形成适当深度的沟槽; 沟槽的内壁表面被热氧化膜覆盖; 并且沟槽被半导体物质掩埋，使得两个CMOS晶体管可以通过沟槽电隔离以增加闩锁保持电压超过电源电压（例如5V）。因此，可以提高防闩锁电阻以保护装置免受噪声，否则会破坏装置。此外，沟槽深度比低杂质原子浓度层（外延层）浅3μm，但比通过从上述厚度或3μm减去2μm获得的值更深。

93. 发明授权

US4662937A Process for production of high-manganese iron alloy by smelting reduction 失效
标题翻译：通过冶炼还原生产高锰铁合金的工艺
公开(公告)号：US4662937A
公开(公告)日：1987-05-05
申请号：US737406
申请日：1985-05-24
申请人： Hiroyuki Katayama , Hidetake Ishikawa , Masatoshi Kuwabara , Hiroyuki Kajioka , Masaki Fujita , Kenji Shibata , Yoshiaki Tamura , Takashi Shimanuki
发明人： Hiroyuki Katayama , Hidetake Ishikawa , Masatoshi Kuwabara , Hiroyuki Kajioka , Masaki Fujita , Kenji Shibata , Yoshiaki Tamura , Takashi Shimanuki
IPC分类号： C21C5/35 , C22C33/00 , C22B47/00
CPC分类号： C22C33/003 , C21C5/35
摘要： There is provided a process for producing a high-manganese iron alloy from a manganese ore and/or a pre-reduced product thereof in a top and bottom blown converter type reaction vessel holding molten iron or a molten manganese iron alloy, together with a molten slag, said molten iron or alloy and said molten slag being the products of a separate smelting furnace, gas being blown into said vessel through a bottom blowing nozzle, said process comprising charging said vessel with a supply of raw materials including at least one source of manganese and iron selected from a manganese ore containing manganese oxide and iron oxide and a pre-reduced product thereof, a solid carbonaceous substance and a slag forming agent, while simultaneously blowing gas selected from oxygen and a gas containing oxygen into said vessel through a top blowing lance to burn said carbonaceous substance so as to heat, melt and reduce said raw materials to form a melt containing manganese oxide and iron oxide; supplying an additional carbonaceous substance into said melt to reduce said manganese oxide and said iron oxide to form a molten high-manganese iron alloy and a molten slag, discontinuing said blowing of gas through said top blowing lance, and removing said molten high-manganese iron alloy and said molten slag from said vessel, said molten alloy being used for casting.
摘要翻译：本发明提供一种在含有铁水或熔融锰铁合金的顶部和底部转化型反应容器中从锰矿石和/或其预还原产物生产高锰铁合金的方法，以及熔融熔渣，所述熔融铁或合金，所述熔融炉渣是单独熔炼炉的产物，气体通过底吹喷嘴吹入所述容器中，所述方法包括向原料供应原料，该原料包括至少一种选自含有锰氧化物和氧化铁的锰矿及其预还原产物，固体碳质物质和成渣剂的锰和铁，同时通过顶部将从氧气和含氧气体中选出的气体吹入所述容器中吹枪吹烧所述碳质物质，以加热，熔化和还原所述原料以形成含有氧化锰和氧化铁的熔体; 向所述熔体中提供另外的碳质物质以减少所述氧化锰和所述氧化铁以形成熔融的高锰铁合金和熔渣，停止通过所述顶吹喷枪吹入气体，并且除去所述熔融的高锰铁合金和来自所述容器的所述熔渣，所述熔融合金用于铸造。

94. 发明授权

US4539091A Electrodialysis desalination process and system for seawater 失效
标题翻译：电渗析脱盐工艺及海水系统
公开(公告)号：US4539091A
公开(公告)日：1985-09-03
申请号：US537550
申请日：1983-10-03
申请人： Hiroshi Kaneda , Kenji Shibata , Mitugu Nomura , Fumihiko Sano
发明人： Hiroshi Kaneda , Kenji Shibata , Mitugu Nomura , Fumihiko Sano
IPC分类号： C02F1/46 , C02F1/469 , B01D13/02
CPC分类号： C02F1/4693 , B01D61/44 , C02F1/4604 , B01D2311/06 , B01D2313/36 , B01D2313/38 , C02F2103/08 , C02F2201/46115 , C02F2201/4612 , C02F2201/46145 , C02F2209/02 , Y10S203/01 , Y10S203/11
摘要： An electrodialysis desalination process for seawater comprising the steps of collecting seawater and heating same by solar heat; subjecting seawater thus heated to electrodialysis; and separating same into two portions of a diluted solution and a concentrated brine, is provided, as well as the same system comprising a preheater utilizing solar heat for preheating seawater, an electrodialyser for separating seawater thus preheated by said preheater into said two portions, and means for supplying seawater to the preheater and then from the preheater to the electrodialyser. Various modifications of the above process and system are disclosed. According to the present inventions, electric power consumption in the electrodialysis is saved and solar heat is utilized effectively.
摘要翻译：一种用于海水的电渗析脱盐方法，包括通过太阳热收集海水并加热其的步骤; 使经加热的海水进行电渗析; 并将其分离成两部分稀释溶液和浓缩盐水，以及包括利用太阳能热预热海水的预热器的相同系统，用于将由所述预热器预热的海水分离成所述两部分的电渗析器，以及用于将海水供应到预热器，然后从预热器供应到电渗析器的装置。公开了上述过程和系统的各种修改。根据本发明，可以节省电渗析中的电力消耗，有效利用太阳能热。

95. 发明授权

US4539088A Electrodialysis desalination process system for seawater 失效
标题翻译：海水电渗析海水淡化系统
公开(公告)号：US4539088A
公开(公告)日：1985-09-03
申请号：US578324
申请日：1984-02-13
申请人： Hiroshi Kaneda , Kenji Shibata , Mitugu Nomura , Fumihiko Sano
发明人： Hiroshi Kaneda , Kenji Shibata , Mitugu Nomura , Fumihiko Sano
IPC分类号： C02F1/46 , C02F1/469 , B01D13/02
CPC分类号： B01D61/44 , C02F1/4604 , C02F1/4693 , B01D2311/06 , B01D2313/36 , B01D2313/38 , C02F2103/08 , C02F2201/46115 , C02F2201/4612 , C02F2201/46145 , C02F2201/46165 , C02F2209/02
摘要： An electrodialysis desalination process for seawater comprising the steps of collecting seawater and heating same by solar heat; subjecting seawater thus heated to electrodialysis; and separating same into two portions of a diluted solution and a concentrated brine, is provided, as well as the same system comprising a preheater utilizing solar heat for preheating seawater, an electrodialyser for separating seawater thus preheated by said preheater into said two portions, and means for supplying seawater to the preheater and then from the preheater to the electrodialyser. Various modifications of the above process and system are disclosed. According to the present inventions, electric power consumption in the electrodialysis is saved and solar heat is utilized effectively.
摘要翻译：一种用于海水的电渗析脱盐方法，包括通过太阳热收集海水并加热其的步骤; 使经加热的海水进行电渗析; 并将其分离成两部分稀释溶液和浓缩盐水，以及包括利用太阳能热预热海水的预热器的相同系统，用于将由所述预热器预热的海水分离成所述两部分的电渗析器，以及用于将海水供应到预热器，然后从预热器供应到电渗析器的装置。公开了上述过程和系统的各种修改。根据本发明，可以节省电渗析中的电力消耗，有效利用太阳能热。

96. 发明授权

US09166142B2 Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device 有权
标题翻译：压电薄膜元件，压电薄膜元件和压电元件的制造方法
公开(公告)号：US09166142B2
公开(公告)日：2015-10-20
申请号：US13567157
申请日：2012-08-06
申请人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
发明人： Fumimasa Horikiri , Kenji Shibata , Kazufumi Suenaga , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/332 , H01L41/08 , H01L41/047 , H01G5/18 , H01L41/09 , H01L41/187
CPC分类号： H01L41/332 , H01G5/18 , H01L41/047 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873
摘要： A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.
摘要翻译：压电薄膜元件的制造方法包括在基板上形成具有由（K1-XNaX）NbO3组成式表示的钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，并通过以下方式对压电膜进行干法蚀刻使用包含氟系反应气体的低压等离子体。

97. 发明授权

US08860286B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08860286B2
公开(公告)日：2014-10-14
申请号：US13577405
申请日：2011-02-15
申请人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Kazutoshi Watanabe , Akira Nomoto
IPC分类号： H01L41/187 , H01L41/08 , H01L41/316
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.
摘要翻译：公开了一种压电薄膜元件和压电薄膜器件，其具有改进的压电性能和高性能，并且可以以提高的产率制造。压电薄膜元件（1）包括：基板（10）和布置在基板（10）上的压电薄膜（40），具有至少一个由通式（NaxKyLiz）NbO 3（0＆nlE）表示的晶体结构 ; x＆nlE; 1,0，nlE; y＆nlE; 1,0，nlE; z＆nlE; 0.2，x + y + z = 1），选自假立方晶体，六方晶体和正交晶体，气体元素的比例为80ppm以下。

98. 发明授权

US08607732B2 In-liquid plasma film-forming apparatus, electrode for in-liquid plasma, and film-forming method using in-liquid plasma 有权
标题翻译：液体内等离子体成膜装置，液体内等离子体用电极和使用液体内等离子体的成膜方法
公开(公告)号：US08607732B2
公开(公告)日：2013-12-17
申请号：US12671773
申请日：2009-03-02
申请人： Kenji Shibata , Toshihisa Shimo , Kyoko Kumagai , Hidetaka Hayashi , Shinya Okuda , Shinfuku Nomura , Hiromichi Toyota
发明人： Kenji Shibata , Toshihisa Shimo , Kyoko Kumagai , Hidetaka Hayashi , Shinya Okuda , Shinfuku Nomura , Hiromichi Toyota
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/509 , C23C16/26 , C23C16/4485 , H01J37/32357
摘要： In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21.
摘要翻译：在液体等离子体成膜装置中，具有容纳基材“S”的容器1和包含原料的液体“L” 用于液体内等离子体的电极2，设置在容器1中的电极2; 用于向用于液体内等离子体的电极2供电的电力装置3; 用于液体内等离子体的电极2装备有：具有放电端22的主电极21; 辅助电极26不仅面向放电端22，而且还设置在放电端22和彼此相对的衬底“S”之间; 以及等离子体产生单元29，其具有由排放端22的表面22a和辅助电极26的面向表面22a的表面26a划分的空间，并且用于通过向主电极供电的方式产生等离子体 21。

99. 发明授权

US08310136B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08310136B2
公开(公告)日：2012-11-13
申请号：US12814544
申请日：2010-06-14
申请人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
发明人： Kazufumi Suenaga , Kenji Shibata , Hideki Sato , Akira Nomoto
IPC分类号： H01L41/187
CPC分类号： H01L41/316 , H01L41/1873
摘要： A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (NaxKyLiz)NbO3 (0≦x 1≦, 0≦y≦1, 0≦z≦0.2, x+y+z=1), and an upper electrode disposed on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which one of these crystals exists or at least two or more of them coexist, and is preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%.
摘要翻译：一种压电薄膜元件，包括具有至少一个下电极的压电薄膜层压体，由通式（NaxKyLiz）NbO 3表示的压电薄膜（0＆amp; nlE; x 1＆nlE; 0＆nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2 ，x + y + z = 1），以及设置在基板上的上电极，其中，所述压电薄膜具有假立方晶体或四方晶体或正交晶体的晶体结构，或者具有其中一个存在这些晶体，或者其中至少两种以上共存，并且优选地定向为小于或等于这些晶体的两个轴的特定轴，并且以组分（001）与组分（111）的比例，体积分数的组分（001）的含量在60％以上且100％以下的范围内，成分（111）的体积分数在0％以上且40％以下的范围内，在组分（001）和组分（111）的总和被设置为100％。

100. 发明授权

US08232708B2 Piezoelectric thin film element, and piezoelectric thin film device 有权
标题翻译：压电薄膜元件和压电薄膜器件
公开(公告)号：US08232708B2
公开(公告)日：2012-07-31
申请号：US12816848
申请日：2010-06-16
申请人： Kenji Shibata , Hideki Sato , Kazufumi Suenaga , Akira Nomoto
发明人： Kenji Shibata , Hideki Sato , Kazufumi Suenaga , Akira Nomoto
IPC分类号： H01L41/04
CPC分类号： H01L41/094 , H01L41/1873 , H01L41/316
摘要： To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K1-xNax)NbO3 (0
摘要翻译：稳定地提供具有可以用PZT薄膜替代的压电特性的KNN压电薄膜元件。压电薄膜元件包括：基底上的压电薄膜，其具有由通式（K1-xNax）NbO3（0

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