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    • 91. 发明授权
    • Semiconductor memory device and antifuse programming method
    • 半导体存储器件和反熔丝编程方法
    • US08982648B2
    • 2015-03-17
    • US13193186
    • 2011-07-28
    • Takuji OnumaKenichi HidakaHiromichi TakaokaYoshitaka KubotaHiroshi Tsuda
    • Takuji OnumaKenichi HidakaHiromichi TakaokaYoshitaka KubotaHiroshi Tsuda
    • G11C7/00G11C17/18
    • G11C17/18
    • An antifuse comprised of an NMOS transistor or an NMOS capacitor includes a first terminal coupled to a gate electrode, a second terminal coupled to a diffusion layer, and a gate insulating film interposed between the gate electrode and the diffusion layer. A programming circuit includes a first programming circuit which has first current drive capability and which performs first programming operation and a second programming circuit which has second current drive capability larger than the first current drive capability and which performs second programming operation to follow the first programming operation. In the first programming operation, the first programming circuit breaks down the gate insulating film by applying a first programming voltage between the first terminal and the second terminal. In the second programming operation, the second programming circuit applies a second programming voltage lower than the first programming voltage between the first terminal and the second terminal.
    • 由NMOS晶体管或NMOS电容器构成的反熔丝包括耦合到栅电极的第一端子,耦合到扩散层的第二端子和介于栅极电极和扩散层之间的栅极绝缘膜。 编程电路包括具有第一电流驱动能力并执行第一编程操作的第一编程电路和具有大于第一电流驱动能力的第二电流驱动能力的第二编程电路,并且执行第二编程操作以跟随第一编程操作 。 在第一编程操作中,第一编程电路通过在第一端子和第二端子之间施加第一编程电压来分解栅极绝缘膜。 在第二编程操作中,第二编程电路在第一端子和第二端子之间施加低于第一编程电压的第二编程电压。
    • 95. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08304852B2
    • 2012-11-06
    • US12385407
    • 2009-04-07
    • Hiromichi TakaokaYoshitaka KubotaHiroshi Tsuda
    • Hiromichi TakaokaYoshitaka KubotaHiroshi Tsuda
    • H01L23/525
    • H01L23/5256H01L2924/0002H01L2924/3011H01L2924/00
    • A semiconductor device (200) includes: an electrical fuse (100) including: a lower layer interconnect (120) formed on a substrate; a via (130) provided on the lower layer interconnect (120) so as to be connected to the lower layer interconnect (120); and an upper layer interconnect (110) provided on the via (130) so as to be connected to the via (130), the electrical fuse being cut, in a state after being cut, through formation of a flowing-out portion, the flowing-out portion being formed when an electrical conductor forming the upper layer interconnect (110) flows outside the upper layer interconnect (110); and a guard upper layer interconnect (152) (conductive heat-absorbing member) formed in at least the same layer as the upper layer interconnect (110), for absorbing heat generated in the upper layer interconnect (110).
    • 一种半导体器件(200)包括:电熔丝(100),包括:形成在衬底上的下层互连(120); 设置在所述下层互连(120)上以便连接到所述下层互连(120)的通孔(130); 以及设置在所述通孔(130)上以便连接到所述通路(130)的上层互连(110),所述电熔丝在切割后通过形成流出部分被切割,所述电熔丝 当形成上层互连(110)的电导体流过上层互连(110)之外时形成流出部分; 以及形成在与上层互连件(110)至少相同的层中的保护层上层互连(152)(导电性吸热构件),用于吸收在上层互连件(110)中产生的热量。
    • 99. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20100133650A1
    • 2010-06-03
    • US12591727
    • 2009-11-30
    • Yoshitaka KubotaHiromichi TakaokaHiroshi Tsuda
    • Yoshitaka KubotaHiromichi TakaokaHiroshi Tsuda
    • H01L23/525
    • H01L23/5256H01L2924/0002H01L2924/00
    • A semiconductor device includes an electric fuse formed on a substrate. The electric fuse includes: a first interconnect formed on one end side thereof; a second interconnect formed in a layer different from a layer in which the first interconnect is formed; a first via provided in contact with the first interconnect and the second interconnect to connect those interconnects; a third interconnect formed on another end side thereof, the third interconnect being formed in the same layer in which the first interconnect is formed, as being separated from the first interconnect; and a second via provided in contact with the third interconnect and the second interconnect to connect those interconnects, the second via being lower in resistance than the first via. The electric fuse is disconnected by a flowing-out portion to be formed of a conductive material forming the electric fuse which flows outwardly during disconnection.
    • 半导体器件包括形成在衬底上的电熔丝。 电熔丝包括:在其一端侧形成的第一互连件; 形成在与形成有第一互连的层不同的层中的第二互连; 与所述第一互连件相接触地设置的第一通孔和用于连接所述互连件的所述第二互连件; 在其另一端侧形成的第三互连,所述第三互连形成在与所述第一互连分离的同一层中,所述第一互连形成在所述第一互连中; 以及与所述第三互连件和所述第二互连件接触地设置以连接那些互连件的第二通孔,所述第二通孔的电阻低于所述第一通孔。 电熔丝由形成在断开时向外流动的电熔丝的导电材料形成的流出部分断开。