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91. 发明授权

US08421715B2 Display device, driving method thereof and electronic appliance 有权
标题翻译：显示装置及其驱动方法及电子设备
公开(公告)号：US08421715B2
公开(公告)日：2013-04-16
申请号：US11131462
申请日：2005-05-18
申请人： Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Tomoyuki Iwabuchi , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki
发明人： Masahiko Hayakawa , Yu Yamazaki , Yukari Ando , Keisuke Miyagawa , Jun Koyama , Tomoyuki Iwabuchi , Mitsuaki Osame , Aya Anzai , Shunpei Yamazaki
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/2022 , G09G3/3216 , G09G3/3241 , G09G3/3266 , G09G3/3291 , G09G2300/0465 , G09G2300/0861 , G09G2310/0251 , G09G2310/063 , G09G2320/0285 , G09G2320/029 , G09G2320/041 , G09G2320/045 , G09G2320/048 , G09G2330/04
摘要： A light emitting element has a property that a resistance value (internal resistance value) thereof changes according to the ambient temperature. Specifically, assuming that the room temperature is a normal temperature, when the ambient temperature becomes higher than the normal temperature, a resistance value is decreased, and when the ambient temperature becomes lower than the normal temperature, a resistance value is increased. Therefore, when the ambient temperature changes or degradation is caused with time due to the aforementioned property of the light emitting element, luminance varies. The invention provides a display device where an effect of current fluctuation of a light emitting element, which is caused by the change in ambient temperature and degradation with time, is suppressed. The display device comprises a monitoring element, to which a current is supplied from a current source. A voltage applied to the monitoring element is applied to a light emitting element.
摘要翻译：发光元件具有其电阻值（内部电阻值）根据环境温度而变化的性质。具体地，假设室温为常温，当环境温度变得高于常温时，电阻值降低，并且当环境温度变得低于常温时，电阻值增加。因此，由于上述发光元件的特性，当环境温度随时间变化或劣化时，亮度变化。本发明提供了一种显示装置，其中抑制了由环境温度的变化和随着时间的劣化而引起的发光元件的电流波动的影响。显示装置包括监视元件，从电流源提供电流。施加到监视元件的电压被施加到发光元件。

92. 发明授权

US08421081B2 Memory device, memory module and electronic device 有权
标题翻译：存储设备，内存模块和电子设备
公开(公告)号：US08421081B2
公开(公告)日：2013-04-16
申请号：US13331645
申请日：2011-12-20
申请人： Kiyoshi Kato , Jun Koyama , Toshihiko Saito , Shunpei Yamazaki
发明人： Kiyoshi Kato , Jun Koyama , Toshihiko Saito , Shunpei Yamazaki
IPC分类号： H01L21/02
CPC分类号： H01L27/1156 , G11C11/404 , H01L27/1225
摘要： The first transistor includes first and second electrodes which are a source and a drain, and a first gate electrode overlapping with a first channel formation region with an insulating film provided therebetween. The second transistor includes third and fourth electrodes which are a source and a drain, and a second channel formation region which is provided between a second gate electrode and a third gate electrode with insulating films provided between the second channel formation region and the second gate electrode and between the second channel formation region and the third gate electrode. The first and second channel formation regions contain an oxide semiconductor, and the second electrode is connected to the second gate electrode.
摘要翻译：第一晶体管包括作为源极和漏极的第一和第二电极，以及与第一沟道形成区域重叠的第一栅电极，其间设置有绝缘膜。第二晶体管包括作为源极和漏极的第三和第四电极以及设置在第二栅电极和第三栅极之间的第二沟道形成区，其中设置在第二沟道形成区和第二栅电极之间的绝缘膜并且在第二通道形成区域和第三栅电极之间。第一和第二沟道形成区域包含氧化物半导体，并且第二电极连接到第二栅电极。

93. 发明授权

US08410002B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08410002B2
公开(公告)日：2013-04-02
申请号：US12945243
申请日：2010-11-12
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L29/78618 , H01L29/045 , H01L29/24 , H01L29/45 , H01L29/66757 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
摘要翻译：目的在于提供具有新颖结构和有利特征的半导体器件。半导体器件包括氧化物半导体层，与氧化物半导体层电连接的源电极和漏电极，覆盖氧化物半导体层的栅极绝缘层，源电极和漏电极以及栅极上的栅电极绝缘层。源电极和漏极包括通过氧化其侧表面而形成的氧化物区域。注意，源电极和漏电极的氧化物区域优选通过等离子体处理形成，其中高频功率为300MHz至300GHz，以及氧和氩的混合气体。

94. 发明授权

US08405789B2 Reflective liquid crystal display panel and device using same 有权
公开(公告)号：US08405789B2
公开(公告)日：2013-03-26
申请号：US13247342
申请日：2011-09-28
申请人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Satoshi Teramoto
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02B27/017 , G02B2027/0138 , G02F1/133553 , G02F1/13454 , G02F2203/02 , H01L27/124 , H01L29/41733
摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

95. 发明授权

US08400278B2 Semiconductor device and IC label, IC tag, and IC card having the same 有权
标题翻译：半导体器件和IC标签，IC标签和具有该标签的IC卡
公开(公告)号：US08400278B2
公开(公告)日：2013-03-19
申请号：US11806133
申请日：2007-05-30
申请人： Jun Koyama
发明人： Jun Koyama
IPC分类号： H04Q5/22
CPC分类号： H02J50/80 , G06F1/263 , G06K19/0702 , G06K19/0723 , G06K19/07749 , H01L21/84 , H01L27/12 , H02J50/10 , H04B5/0037
摘要： The present invention provides a power supply circuit provided with a battery as a power source for supplying power to an RFID, and the battery of the power supply circuit is charged with a wireless signal. Then, a switching circuit is provided in the power supply circuit that supplies power to a signal control circuit which transmits and receives individual information to and from the outside to intermittently control supply of power to the signal control circuit by a signal from a low-frequency signal generation circuit.
摘要翻译：本发明提供了一种电源电路，其设置有作为用于向RFID供电的电源的电池，并且向电源电路的电池充电无线信号。然后，在电源电路中设置开关电路，该电源电路向向外部发送和接收个人信息的信号控制电路供电，以间歇地控制来自低频的信号对信号控制电路的供电信号发生电路。

96. 发明授权

US08395608B2 Display device and method of driving the same 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US08395608B2
公开(公告)日：2013-03-12
申请号：US13300867
申请日：2011-11-21
申请人： Jun Koyama , Hajime Kimura
发明人： Jun Koyama , Hajime Kimura
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G3/3241 , G09G3/3283 , G09G2300/0439 , G09G2300/0842 , G09G2310/0248 , G09G2310/0251 , G09G2310/0272 , G09G2310/0275 , G09G2310/065 , G09G2320/0233 , G09G2320/029 , G09G2320/0295 , G09G2320/043 , H01L27/12 , H01L27/3244
摘要： Disclosed is an EL display device by which accurate gray scales can be obtained. The EL display device comprises a source signal line driving circuit which includes an operation amplifier electrically connected to a correction TFT and a source signal line, and a pixel which includes an EL element and a driving TFT. An inputted analog signal voltage is converted into a current, the current is converted into a gate-source voltage of the correction TFT that has the same polarity as the driving TFT, the gate-source voltage is supplied as a source line signal to the source signal line, and the source line signal is applied to a gate electrode of the driving TFT. Thus the EL element can emit light at a luminance linearly corresponding to the inputted analog signal voltage.
摘要翻译：公开了可以获得准确的灰度级的EL显示装置。 EL显示装置包括源极信号线驱动电路，其包括电连接到校正TFT和源极信号线的运算放大器，以及包括EL元件和驱动TFT的像素。将输入的模拟信号电压转换为电流，将电流转换为具有与驱动TFT相同极性的校正TFT的栅极 - 源极电压，将栅极 - 源极电压作为源极线信号提供给源极信号线，源极线信号施加到驱动TFT的栅电极。因此，EL元件可以以对应于输入的模拟信号电压的线性对应的亮度发光。

97. 发明授权

US08390190B2 Electro-optical device with active matrix EL display 有权
标题翻译：具有有源矩阵EL显示的电光装置
公开(公告)号：US08390190B2
公开(公告)日：2013-03-05
申请号：US13189231
申请日：2011-07-22
申请人： Jun Koyama
发明人： Jun Koyama
IPC分类号： H01L51/00
CPC分类号： H01L27/3276 , G09G3/2018 , G09G3/2022 , G09G3/2077 , G09G3/2081 , G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3275 , G09G3/3291 , G09G2300/0408 , G09G2300/0417 , G09G2300/0426 , G09G2300/043 , G09G2300/0809 , G09G2300/0842 , G09G2300/0847 , G09G2300/0866 , G09G2320/0276 , G09G2320/0285 , G09G2320/029 , G09G2320/043 , H01L27/1214 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/78672 , H01L51/5012 , H01L51/5256 , Y10S428/917
摘要： An electro-optical device for performing time division gray scale display and which is capable of arbitrarily setting the amount of time during which light is emitted by EL elements is provided. From among n sustain periods Ts1, . . . , Tsn, the brightness of light emitted by the EL elements during at least one sustain period is set to be always lower than the brightness of light emitted by the EL elements during the other sustain periods, and the sustain periods are extended by the amount that the brightness has dropped. In accordance with the above structure, the sustain periods can be extended by lowering the setting of the brightness of light emitted by the EL elements.
摘要翻译：提供一种用于执行时分灰度显示并且能够任意设置由EL元件发光的时间量的电光装置。从n个维持周期Ts1，...中。。 Tsn时，由EL元件在至少一个维持期间发出的光的亮度设定为始终低于其他维持期间的EL元件发出的光的亮度，维持期延长了亮度下降。根据上述结构，可以通过降低由EL元件发射的光的亮度的设定来延长维持周期。

98. 发明授权

US08339836B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08339836B2
公开(公告)日：2012-12-25
申请号：US12987302
申请日：2011-01-10
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： G11C11/24 , G11C11/22
CPC分类号： H01L27/10805 , G11C5/063 , G11C11/403 , G11C11/405 , G11C16/02 , H01L27/11521 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/60
摘要： An object is to provide a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and does not have a limitation on the number of times of writing operations. A semiconductor device includes a source-bit line, a first signal line, a second signal line, a word line, and a memory cell connected between the source-bit lines. The memory cell includes a first transistor, a second transistor, and a capacitor. The second transistor is formed including an oxide semiconductor material. A gate electrode of the first transistor, one of a source and drain electrodes, and one of electrodes of the capacitor are electrically connected to one another. The source-bit line and a source electrode of the first transistor are electrically connected to each other. Another source-bit line adjacent to the above source-bit line and a drain electrode of the first transistor are electrically connected to each other.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保留存储的数据，并且对写入操作的次数没有限制。半导体器件包括源极线，第一信号线，第二信号线，字线和连接在源极线之间的存储单元。存储单元包括第一晶体管，第二晶体管和电容器。形成包括氧化物半导体材料的第二晶体管。第一晶体管的栅极，源极和漏极之一以及电容器的电极中的一个彼此电连接。第一晶体管的源极线和源电极彼此电连接。与上述源极线相邻的另一个源极线和第一晶体管的漏极彼此电连接。

99. 发明授权

US08339339B2 Light emitting device, method of driving the same, and electronic device 有权
标题翻译：发光装置及其驱动方法以及电子装置
公开(公告)号：US08339339B2
公开(公告)日：2012-12-25
申请号：US10026406
申请日：2001-12-21
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G09G3/30
CPC分类号： G09G3/3266 , G09G3/2014 , G09G3/2022 , G09G3/3258 , G09G3/3275 , G09G2300/0408 , G09G2300/0809 , G09G2300/0857 , G09G2310/027 , G09G2320/0247 , G09G2320/0261 , G09G2320/0266
摘要： A light emitting device in which flickers on a screen can be reduced is provided. In the present invention, each pixel has memories and at the start of a frame period, all of bits of digital vide signals are written in the memories. Then, in the frame period, according to information in all of the bit of digital video signals, the light emitting device sequently emit a light in a determined period.
摘要翻译：提供了可以减少屏幕上闪烁的发光装置。在本发明中，每个像素具有存储器，并且在帧周期开始时，将数字视频信号的所有比特写入存储器。然后，在帧周期中，根据数字视频信号的所有比特中的信息，发光装置在确定的周期内依次发光。

100. 发明授权

US08324618B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08324618B2
公开(公告)日：2012-12-04
申请号：US13432009
申请日：2012-03-28
申请人： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
发明人： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC分类号： H01L51/56
CPC分类号： H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
摘要： The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
摘要翻译：本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态高于现有的和驾驶，并允许具有低通道电导gd。根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于可以降低OLED的劣化。

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