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91. 发明申请

US20060148186A1 Method and apparatus for manufacturing gallium nitride based single crystal substrate 审中-公开
标题翻译：用于制造氮化镓基单晶衬底的方法和装置
公开(公告)号：US20060148186A1
公开(公告)日：2006-07-06
申请号：US11220020
申请日：2005-09-06
申请人： Soo Min Lee , Masayoshi Koike , Kyeong Ik Min , Cheol Kyu Kim , Sung Hwan Jang , Min Ho Kim
发明人： Soo Min Lee , Masayoshi Koike , Kyeong Ik Min , Cheol Kyu Kim , Sung Hwan Jang , Min Ho Kim
IPC分类号： H01L21/336
CPC分类号： C30B29/406 , C30B29/64 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02664
摘要： A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from the preliminary substrate under the condition that the preliminary substrate is placed in the reaction chamber.
摘要翻译：一种用于制造氮化物基单晶衬底的方法和装置。该方法包括将初步衬底放置在安装在反应室中的基座上; 在初始衬底上生长氮化物单晶层; 并且在预备衬底放置在反应室中的条件下照射激光束以将氮化物单晶层与预备衬底分离。

92. 发明授权

US07063997B2 Process for producing nitride semiconductor light-emitting device 失效
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US07063997B2
公开(公告)日：2006-06-20
申请号：US10893924
申请日：2004-07-20
申请人： Dong Hyun Cho , Masayoshi Koike , Hun Joo Hahm
发明人： Dong Hyun Cho , Masayoshi Koike , Hun Joo Hahm
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N2 gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively.
摘要翻译：制造氮化物半导体发光器件的方法包括以下步骤：制备衬底，通过使用肼系气体作为氮前体的MOCVD法在衬底上生长p型氮化物半导体层，气体作为载气，在p型氮化物半导体层上形成有源层，在有源层上形成n型导电氮化物半导体层，形成与p电极电连接的p型和n型电极和n型氮化物半导体。

93. 发明申请

US20060091408A1 Nitride based semiconductor device using nanorods and process for preparing the same 有权
标题翻译：使用纳米棒的基于氮化物的半导体器件及其制备方法
公开(公告)号：US20060091408A1
公开(公告)日：2006-05-04
申请号：US11204226
申请日：2005-08-16
申请人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
发明人： Min Kim , Masayoshi Koike , Kyeong Min , Seong Lee , Sung Jang
IPC分类号： H01L29/22
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
摘要翻译：公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

94. 发明申请

US20050093099A1 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices 失效
标题翻译：制备III族氮化物化合物半导体和III族氮化物化合物半导体器件的方法
公开(公告)号：US20050093099A1
公开(公告)日：2005-05-05
申请号：US10978438
申请日：2004-11-02
申请人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
发明人： Masayoshi Koike , Yuta Tezen , Toshio Hiramatsu , Seiji Nagai
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00 , H01L29/06 , C30B1/00 , H01L21/36 , H01L29/20 , H01L31/0304 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layer 31 is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a mask 4 is formed at the bottom of the trench such that the upper surface of the mask 4 is positioned below the top surface of the GaN layer 31. A GaN layer 32 is lateral-epitaxially grown with the top surface 31a of the mesa and sidewalls 31b of the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer 32 formed above the mask 4 through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer 31 can be prevented.
摘要翻译：本发明提供了具有抑制的穿透位错产生的III族氮化物化合物半导体。对GaN层31进行蚀刻，以形成具有例如点状，条状或格栅形状的岛状结构，由此提供沟槽/台面结构，并且在底部形成掩模4 使得掩模4的上表面位于GaN层31的顶表面下方。 GaN层32与作为核的沟槽的台面的顶面31a和侧壁31b进行横向外延生长，从而埋入沟槽，然后沿垂直方向进行外延生长。在通过横向外延生长形成在掩模4上方的GaN层32的上部区域中，可以防止包含在GaN层31中的穿透位错的传播。

95. 发明授权

US06855620B2 Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices 有权
标题翻译：制备III族氮化物化合物半导体衬底和半导体器件的方法
公开(公告)号：US06855620B2
公开(公告)日：2005-02-15
申请号：US10258546
申请日：2001-03-02
申请人： Masayoshi Koike , Seiji Nagai , Yuta Tezen
发明人： Masayoshi Koike , Seiji Nagai , Yuta Tezen
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/36 , H01L31/0336 , H01L31/3028
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075
摘要： A GaN layer 31 is subjected to etching, so as to form an island-like structure having, for example, a dot, stripe, or grid shape, thereby providing a trench/mesa structure including mesas and trenches whose bottoms sink into the surface of a substrate base 1. Subsequently, a GaN layer 32 is lateral-epitaxially grown with the top surfaces of the mesas and sidewalls of the trenches serving as nuclei, to thereby fill upper portions of the trenches (depressions of the substrate base 1), and then epitaxial growth is effected in the vertical direction. In this case, propagation of threading dislocations contained in the GaN layer 31 can be prevented in the upper portion of the GaN layer 32 that is formed through lateral epitaxial growth. Thereafter, the remaining GaN layer 31 is removed through etching, together with the GaN layer 32 formed atop the GaN layer 31, and subsequently, a GaN layer 33 is lateral-epitaxially grown with the top surfaces of mesas and sidewalls of trenches serving as nuclei, the mesas and trenches being formed of the remaining GaN layer 32, thereby producing a GaN substrate 30 in which threading dislocations are considerably suppressed. When the area of a portion of the GaN layer 31 at which the GaN substrate 30 is in contact with the substrate base 1 is reduced, separation of the GaN substrate 30 from the substrate base 1 is readily attained.
摘要翻译：对GaN层31进行蚀刻，以形成例如点状，条状或格子状的岛状结构，从而提供包括台面和沟槽的沟槽/台面结构，其底部沉入到接下来，GaN层32被横向外延生长，台阶的顶表面和沟槽的侧壁用作核，从而填充沟槽的上部（衬底1的凹陷），以及则在垂直方向进行外延生长。在这种情况下，在通过横向外延生长形成的GaN层32的上部可以防止包含在GaN层31中的穿透位错的传播。此后，残留的GaN层31与形成在GaN层31顶上的GaN层32一起通过蚀刻去除，随后，GaN层33被横向外延生长，作为用作核的沟槽的台面和侧壁的顶面，台面和沟槽由剩余的GaN层32形成，从而产生显着地抑制穿透位错的GaN衬底30。当GaN衬底30与衬底基底1接触的部分GaN层31的面积减小时，容易获得GaN衬底30与衬底基底1的分离。

96. 发明授权

US06801559B2 Group III nitride compound semiconductor laser 有权
标题翻译： III族氮化物化合物半导体激光器
公开(公告)号：US06801559B2
公开(公告)日：2004-10-05
申请号：US10383229
申请日：2003-03-07
申请人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
发明人： Takashi Hatano , Sho Iwayama , Masayoshi Koike
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/209 , H01S5/22 , H01S5/34333 , H01S2301/18
摘要： A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.
摘要翻译：半导体激光器包括蓝宝石衬底，AlN缓冲层，Si掺杂GaN n层，Si掺杂的Al 0.1 Ga 0.9 N n包层，Si掺杂的GaN n引导层，具有多个量子阱的有源层（MQW）结构，其中GaN阻挡层62的厚度约为35，Ga0.95In0.55N阱层61的厚度约为35，Mg掺杂的GaN引导层，Mg掺杂的Al0.25Ga0 在其上依次形成了.75N p层，Mg掺杂的Al 0.1 Ga 0.9 N p包覆层和掺杂Mg的GaN p接触层。与脊状激光腔部A接触的脊状空穴注入部B形成为与Ni电极的宽度w相同的宽度。因为p层具有较大的铝组成，所以蚀刻速率变小，并且可以防止在该蚀刻工艺中损坏p导向层。

97. 发明授权

US06790279B2 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor 有权
标题翻译：制造III族氮化物化合物半导体的方法和使用III族氮化物化合物半导体的发光装置
公开(公告)号：US06790279B2
公开(公告)日：2004-09-14
申请号：US10187943
申请日：2002-07-02
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2502
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III nitride compound semiconductor 3 grows epitaxially on the buffer layer 2 in a longitudinal direction, and grows epitaxially on the substrate-exposed portions in a lateral direction. As a result, a group III nitride compound semiconductor 3 which has little or no feedthrough dislocations 4 is obtained. Because the region where the group III nitride compound semiconductor 3 grows epitaxially in a lateral direction, on region 32, has excellent crystallinity, forming a group III nitride compound semiconductor device on the upper surface of the region results in improved device characteristics.
摘要翻译：在基板1上形成由氮化铝（AlN）构成的缓冲层2，形成为点阵图案，条纹图案或栅格图案等岛状图案，使得基板曝光部分以散射方式形成。 III族氮化物化合物半导体3沿纵向在外延生长在缓冲层2上，并沿横向在外延生长在基板暴露部分上。结果，得到几乎没有或没有穿穿位错4的III族氮化物化合物半导体3。由于III族氮化物半导体3在横向上外延生长的区域，在区域32上具有优异的结晶性，所以在该区域的上表面上形成III族氮化物化合物半导体器件导致改进的器件特性。

98. 发明授权

US06679947B2 Semiconductor substrate 失效
标题翻译：半导体衬底
公开(公告)号：US06679947B2
公开(公告)日：2004-01-20
申请号：US10237603
申请日：2002-09-10
申请人： Masayoshi Koike , Seiji Nagai
发明人： Masayoshi Koike , Seiji Nagai
IPC分类号： C30B2502
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/0079 , H01S5/0202 , H01S5/0213 , H01S5/32341
摘要： A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.
摘要翻译：在低于Au层的1064℃的熔点的温度下，通过Au层在蓝宝石上生长厚的GaN层，使样品的温度升高到超过Au层的熔点，使得 Au层溶解。在这种状态下，蓝宝石和GaN层彼此分离。

99. 发明授权

US06645785B2 Light-emitting semiconductor device using group III nitride compound 失效
标题翻译：使用III族氮化物化合物的发光半导体器件
公开(公告)号：US06645785B2
公开(公告)日：2003-11-11
申请号：US09909895
申请日：2001-07-23
申请人： Masayoshi Koike , Shinya Asami
发明人： Masayoshi Koike , Shinya Asami
IPC分类号： H01L2100
CPC分类号： H01L33/325 , B82Y20/00 , H01L33/06
摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.
摘要翻译：用于光源器件的发射层（5）形成为具有掺杂有受主和施主杂质的多层结构。多层结构可以包括量子阱（QW）结构或多量子阱（MQW）结构（50）。通过这样的结构，可以控制光源的峰值波长，因为受主的原子与供体杂质之间的距离变宽。可以通过例如改变多层结构的每个复合层的厚度，改变它们的组成比，在杂质掺杂层之间形成未掺杂的层5等来进行几种布置。此外，可以提高紫外线的发光强度，因为掺杂施主杂质和受主杂质实现了供体 - 受体发射机制和丰富的载体。可以通过例如优化复合层的材料，优化其组成比，优化其晶格常数等来进行若干布置，以进一步增强光源的发光强度。

100. 发明授权

US06639258B2 Group III nitride compound semiconductor device 有权
公开(公告)号：US06639258B2
公开(公告)日：2003-10-28
申请号：US10187987
申请日：2002-07-03
申请人： Masayoshi Koike , Shiro Yamasaki
发明人： Masayoshi Koike , Shiro Yamasaki
IPC分类号： H01L31012
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/03046 , H01S5/021 , H01S5/0211 , H01S5/305 , H01S5/3054 , H01S5/3211 , H01S5/34333 , H01S2304/04 , Y02E10/544
摘要： Aluminum gallium nitride (AlxGa1−xN, 0

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