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91. 发明申请

US20110057232A1 SEMICONDUCTOR DEVICES INCLUDING SHALLOW IMPLANTED REGIONS AND METHODS OF FORMING THE SAME 有权
标题翻译：包括浅层植入区域的半导体器件及其形成方法
公开(公告)号：US20110057232A1
公开(公告)日：2011-03-10
申请号：US12118243
申请日：2008-05-09
申请人： Scott T. Sheppard , R. Peter Smith , Yifeng Wu , Sten Heikman , Matthew Jacob-Mitos
发明人： Scott T. Sheppard , R. Peter Smith , Yifeng Wu , Sten Heikman , Matthew Jacob-Mitos
IPC分类号： H01L29/737 , H01L21/338
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/0843 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.
摘要翻译：形成半导体器件的方法包括在III族氮化物半导体层上形成电介质层，在半导体层的间隔开的源极和漏极区域上选择性地去除电介质层的部分，将具有第一导电类型的离子直接注入到源和漏区，退火半导体层和电介质层以激活注入的离子，并在半导体层的源极和漏极区上形成金属接触。

92. 发明申请

US20100010081A1 ANTI-TUMOR EFFECT OF DIMERIC PHTHALIDE COMPOUND 有权
标题翻译：二元酚酞化合物的抗肿瘤作用
公开(公告)号：US20100010081A1
公开(公告)日：2010-01-14
申请号：US12523792
申请日：2007-01-19
申请人： Fei Chen , Tao Wang , Yifeng Wu
发明人： Fei Chen , Tao Wang , Yifeng Wu
IPC分类号： A61K31/343 , A61P35/00
CPC分类号： A61K31/365 , C07D307/88 , C07D493/08 , C07D493/10
摘要： The present invention provides for the use of a dimeric phthalide compound, the dimeric phthalide compound has broad anti-tumor activity, can directly inhibit the proliferation of tumor cells and induce cell death, but also indirectly inhibit the development of tumors by suppressing neovascularization. And further, the dimeric phthalide compound can be used alone or in combination to treat cancer, as well as in combination with chemotherapeutics to increase the efficacy of chemotherapeutics and decrease the toxicity of chemotherapeutics.
摘要翻译：本发明提供二聚苯酞化合物的用途，二苯醚膦化合物具有广泛的抗肿瘤活性，可直接抑制肿瘤细胞的增殖并诱导细胞死亡，而且通过抑制新生血管形成间接抑制肿瘤的发生。此外，二聚苯酞化合物可以单独使用或组合使用以治疗癌症，以及与化学治疗剂组合以增加化学治疗剂的功效并降低化学治疗剂的毒性。

93. 发明申请

US20090309124A1 LED Fabrication via Ion Implant Isolation 有权
标题翻译：通过离子植入隔离制造LED
公开(公告)号：US20090309124A1
公开(公告)日：2009-12-17
申请号：US12507288
申请日：2009-07-22
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, JR. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, JR. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

94. 发明申请

US20080252229A1 High efficiency AC LED driver circuit 有权
标题翻译：高效率交流LED驱动电路
公开(公告)号：US20080252229A1
公开(公告)日：2008-10-16
申请号：US11786907
申请日：2007-04-13
申请人： Yifeng Wu
发明人： Yifeng Wu
IPC分类号： H05B37/00
CPC分类号： H05B33/0803 , H05B33/0809 , Y02B20/342
摘要： In an AC drive circuit for LEDs, a current limiting capacitor connects to an AC source, a first circuit portion, including a first rectifying diode and a first power capacitor, connects between the current limiting capacitor and the source and a second circuit portion, including a second rectifying diode in series with a second power capacitor, is in parallel with the first circuit portion. A first LED is in the first circuit portion in parallel with the first power capacitor, while a second LED in the second circuit portion is in parallel with the second power capacitor. During positive half cycles, the first rectifying diode charges the first power capacitor and drives the first LED. During negative half cycles, the second rectifying diode charges the second power capacitor and drives the second LED.
摘要翻译：在用于LED的AC驱动电路中，限流电容器连接到AC电源，包括第一整流二极管和第一功率电容器的第一电路部分连接在限流电容器和源极之间以及第二电路部分，包括与第二电力电容器串联的第二整流二极管与第一电路部分并联。第一LED与第一电力电容器并联在第一电路部分中，而第二电路部分中的第二LED与第二功率电容器并联。在正半周期期间，第一整流二极管对第一功率电容器充电并驱动第一LED。在负半周期期间，第二整流二极管对第二功率电容器充电并驱动第二LED。

95. 发明申请

US20080230786A1 High temperature performance capable gallium nitride transistor 有权
标题翻译：耐高温性能的氮化镓晶体管
公开(公告)号：US20080230786A1
公开(公告)日：2008-09-25
申请号：US11726975
申请日：2007-03-23
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/475 , H01L29/66462
摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.
摘要翻译：在高温下能够高性能的晶体管器件。晶体管包括具有接触有源区的接触层的栅极。当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且在高温下操作时表现出降低的降解。该装置还可以包括场板以进一步增加装置的工作寿命。

96. 发明申请

US20080128752A1 GaN based HEMTs with buried field plates 有权
标题翻译：具有掩埋场板的GaN基HEMT
公开(公告)号：US20080128752A1
公开(公告)日：2008-06-05
申请号：US11901103
申请日：2007-09-13
申请人： Yifeng Wu
发明人： Yifeng Wu
IPC分类号： H01L29/205
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L29/8128
摘要： A transistor comprising an active region, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A first spacer layer is on at least part of the surface of the active region between the gate and the drain electrode and between the gate and the source electrode. The gate comprises a generally t-shaped top portion that extends toward the source and drain electrodes. A field plate is on the spacer layer and under the overhand of at least one section of the gate top portion. The field plate is at least partially covered by a second spacer layer, with the second spacer layer on at least part of the surface of the first active layer and between the gate and the drain and between the gate and the source. At least one conductive path electrically connects the field plate to the source electrode or the gate.
摘要翻译：一种晶体管，包括有源区，源极和漏极形成为与有源区接触，栅极形成在源极和漏极之间并与有源区接触。第一间隔层位于栅极和漏电极之间以及栅极和源电极之间的有源区的表面的至少一部分上。栅极包括朝向源极和漏极延伸的大致t形的顶部部分。场板位于间隔层上并且在栅极顶部的至少一个部分的下方。场板至少部分地被第二间隔层覆盖，其中第二间隔层位于第一有源层的至少部分表面上，并且在栅极和漏极之间以及栅极和源极之间。至少一个导电路径将场板电连接到源电极或栅极。

97. 发明授权

US07184175B2 System and method for color calibration 失效
标题翻译：颜色校准系统和方法
公开(公告)号：US07184175B2
公开(公告)日：2007-02-27
申请号：US10231572
申请日：2002-08-29
申请人： Yifeng Wu , Philip B Cowan , David Kinkley
发明人： Yifeng Wu , Philip B Cowan , David Kinkley
IPC分类号： H04N1/50 , H04N1/60
CPC分类号： H04N1/6033
摘要： A method of detecting color miscalibration in a color output device. Accordingly, the method includes providing a calibration mask having a target color and a plurality of windows, and outputting a test array that includes a plurality of test samples arranged for viewing through the windows of the calibration mask, wherein each test sample has an associated test color. The windows may be at least partially aligned with at least one of the test samples, and the target color of the calibration mask may be compared to the test colors of the framed test samples.
摘要翻译：一种检测彩色输出装置中色彩错误的方法。因此，该方法包括提供具有目标颜色和多个窗口的校准掩模，并且输出包括多个测试样本的测试阵列，该测试阵列布置成通过校准掩模的窗口进行观察，其中每个测试样本具有相关测试颜色。窗口可以至少部分地与至少一个测试样本对准，并且校准掩模的目标颜色可以与框架测试样本的测试颜色进行比较。

98. 发明授权

US07152947B2 Selecting modes for printing 失效
标题翻译：选择打印模式
公开(公告)号：US07152947B2
公开(公告)日：2006-12-26
申请号：US10796757
申请日：2004-03-08
申请人： Yifeng Wu
发明人： Yifeng Wu
IPC分类号： B41J2/15
CPC分类号： B41J19/147 , H04N1/233 , H04N1/2369 , H04N1/40062 , H04N2201/0466 , H04N2201/0468
摘要： A method of printing data defining an arrangement of a first set of image elements within an array of first and second sets of image elements. The first set may have a different color characteristic than the second set. At least one mode may be selected for placement of colorant-based representations of the image elements of the first set onto a print medium based on one or more values corresponding to the percentage of image elements of the first set in at least one of the array and one or more portions of the array. Colorant-based representations may be placed onto the print medium according to the at least one mode selected and in the arrangement defined by the data.
摘要翻译：一种在第一和第二组图像元素的阵列内打印定义第一组图像元素的排列的数据的方法。第一组可能具有与第二组不同的颜色特性。可以选择至少一种模式，用于基于与阵列中的至少一个阵列中的第一组的图像元素的百分比对应的一个或多个值将第一组的图像元素的基于着色剂的表示放置在打印介质上和阵列的一个或多个部分。基于着色剂的表示可以根据所选择的至少一种模式和由数据定义的布置放置在打印介质上。

99. 发明申请

US20050285126A1 LED fabrication via ion implant isolation 有权
公开(公告)号：US20050285126A1
公开(公告)日：2005-12-29
申请号：US11154619
申请日：2005-06-16
申请人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald Negley , David Slater , Valeri Tsvetkov , Alexander Suvorov
IPC分类号： H01L29/22 , H01L33/30 , H01L33/32
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.

100. 发明申请

US20050195232A1 Selecting modes for printing 失效
标题翻译：选择打印模式
公开(公告)号：US20050195232A1
公开(公告)日：2005-09-08
申请号：US10796757
申请日：2004-03-08
申请人： Yifeng Wu
发明人： Yifeng Wu
IPC分类号： B41J2/205
CPC分类号： B41J19/147 , H04N1/233 , H04N1/2369 , H04N1/40062 , H04N2201/0466 , H04N2201/0468
摘要： A method of printing data defining an arrangement of a first set of image elements within an array of first and second sets of image elements. The first set may have a different color characteristic than the second set. At least one mode may be selected for placement of colorant-based representations of the image elements of the first set onto a print medium based on one or more values corresponding to the percentage of image elements of the first set in at least one of the array and one or more portions of the array. Colorant-based representations may be placed onto the print medium according to the at least one mode selected and in the arrangement defined by the data.
摘要翻译：一种在第一和第二组图像元素的阵列内打印定义第一组图像元素的排列的数据的方法。第一组可能具有与第二组不同的颜色特性。可以选择至少一种模式，用于基于与阵列中的至少一个阵列中的第一组的图像元素的百分比对应的一个或多个值将第一组的图像元素的基于着色剂的表示放置在打印介质上和阵列的一个或多个部分。基于着色剂的表示可以根据所选择的至少一种模式和由数据定义的布置放置在打印介质上。

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