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91. 发明申请

US20110259269A1 SMALL FORM FACTOR PLASMA SOURCE FOR HIGH DENSITY WIDE RIBBON ION BEAM GENERATION 有权
标题翻译：用于高密度宽度RIBBON离子束生成的小形状因子等离子体源
公开(公告)号：US20110259269A1
公开(公告)日：2011-10-27
申请号：US12767125
申请日：2010-04-26
申请人： Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
发明人： Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
IPC分类号： C23C16/00
CPC分类号： H01J37/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H05H1/30
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
摘要翻译：公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。与常规ICP源相反，本公开描述了不是圆柱形的ICP源。相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。可以定义源的深度以最大化从天线到等离子体的能量传递。在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

92. 发明申请

US20110240878A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240878A1
公开(公告)日：2011-10-06
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/02 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

93. 发明授权

US07821213B2 Techniques for controlling a charged particle beam 有权
标题翻译：用于控制带电粒子束的技术
公开(公告)号：US07821213B2
公开(公告)日：2010-10-26
申请号：US11865336
申请日：2007-10-01
申请人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
发明人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
IPC分类号： H05H9/00
CPC分类号： H05H7/04 , H01J37/08 , H01J37/3171 , H01J2237/002 , H01J2237/04735 , H01J2237/304
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速器柱，其可以包括多个电极。多个电极可以具有带电粒子束可以通过的孔。带电粒子加速/减速系统还可以包括电压分级系统。电压分级系统可以包括第一流体储存器和第一流体回路。第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。电压分级系统还可以包括第一流体回路中的流体。流体可能具有电阻。

94. 发明申请

US20100252746A1 END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS 有权
标题翻译：在离子植入系统中使用的电极的终止终止
公开(公告)号：US20100252746A1
公开(公告)日：2010-10-07
申请号：US12418053
申请日：2009-04-03
申请人： Frank Sinclair , Svetlana B. Radovanov , Kenneth H. Purser
发明人： Frank Sinclair , Svetlana B. Radovanov , Kenneth H. Purser
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/04 , H01J2237/036 , H01J2237/15
摘要： An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
摘要翻译：离子注入系统包括静电透镜。静电透镜包括端子电极，接地电极和设置在它们之间的抑制电极。离子束通过端子电极进入静电透镜并通过接地电极离开。电极具有相关的静电等电位。端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。相应的端板具有对应于与特定电极相关联的静电等电位的形状，以便在光束通过静电透镜时保持光束的均匀性。

95. 发明授权

US07723697B2 Techniques for optical ion beam metrology 有权
标题翻译：光离子束计量技术
公开(公告)号：US07723697B2
公开(公告)日：2010-05-25
申请号：US11859219
申请日：2007-09-21
申请人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
发明人： Alexander S. Perel , Wilhelm Platow , Craig Chaney , Frank Sinclair , Tyler Rockwell
IPC分类号： G01K11/00 , G21K5/02 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/2445 , H01J2237/24507 , H01J2237/24542 , H01J2237/2482 , H01J2237/30472
摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
摘要翻译：公开了提供光学离子束计量的技术。在一个特定的示例性实施例中，技术可以被实现为用于控制光束密度分布的装置，该装置可以包括一个或多个相机系统以捕获离子束的至少一个图像和耦合到一个或多个相机的控制系统用于控制离子束的束密度分布的系统。控制系统还可以包括剂量分析器，以在反馈环路和前馈环路中的至少一个中向一个或多个离子注入组件提供信息，以改善剂量和角度均匀性。

96. 发明申请

US20100116983A1 MASS ANALYSIS MAGNET FOR A RIBBON BEAM 有权
标题翻译： RIBBON梁的质量分析磁铁
公开(公告)号：US20100116983A1
公开(公告)日：2010-05-13
申请号：US12616589
申请日：2009-11-11
申请人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
发明人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
IPC分类号： H01J49/30 , G21K5/00 , H01J37/08
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。螺线管线圈沿着带状束的行进方向间隔开。每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

97. 发明申请

US20090085504A1 TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
标题翻译：用于控制充电颗粒光束的技术
公开(公告)号：US20090085504A1
公开(公告)日：2009-04-02
申请号：US11865336
申请日：2007-10-01
申请人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
发明人： Piotr R. Lubicki , Russell J. Low , Stephen E. Krause , Frank Sinclair
IPC分类号： H05H7/00
CPC分类号： H05H7/04 , H01J37/08 , H01J37/3171 , H01J2237/002 , H01J2237/04735 , H01J2237/304
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an accelerator column, which may comprise a plurality of electrodes. The plurality of electrodes may have apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a voltage grading system. The voltage grading system may comprise a first fluid reservoir and a first fluid circuit. The first fluid circuit may have conductive connectors connecting to at least one of the plurality of electrodes. The voltage grading system may further comprise fluid in the first fluid circuit. The fluid may have an electrical resistance.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速器柱，其可以包括多个电极。多个电极可以具有带电粒子束可以通过的孔。带电粒子加速/减速系统还可以包括电压分级系统。电压分级系统可以包括第一流体储存器和第一流体回路。第一流体回路可以具有连接到多个电极中的至少一个的导电连接器。电压分级系统还可以包括第一流体回路中的流体。流体可能具有电阻。

98. 发明授权

US06213184B1 Seam welder 有权
标题翻译：接缝焊工
公开(公告)号：US06213184B1
公开(公告)日：2001-04-10
申请号：US09241970
申请日：1999-02-01
申请人： Frank Sinclair
发明人： Frank Sinclair
IPC分类号： B32B3500
CPC分类号： B29C65/203 , B29C65/20 , B29C66/1122 , B29C66/133 , B29C66/135 , B29C66/43 , B29C66/431 , B29C66/4322 , B29C66/4332 , B29C66/81417 , B29C66/81422 , B29C66/8161 , B29C66/8167 , B29C66/8221 , B29C66/8223 , B29C66/82261 , B29C66/82263 , B29C66/8362 , B29C66/86523 , Y10T156/1715 , Y10T156/1741 , Y10T156/1788 , Y10T156/18
摘要： A hot wedge, automatic seam welder is disclosed. The welder is comprised of a chassis having a base plate, a motor housing and a support arm extending from the motor housing. An S-shaped guide for guiding opposing sheets of material is between the base plate and the motor housing. Disposed downstream from the motor housing, depending from the support arm, is vertically-movable suspension for a driven upper pressure roller which is occludable with a driven lower pressure roller on the base plate. Also depending from the support arm is vertically-movable and adjustable suspension for the hot wedge. A horn-shaped shroud for guiding material over and under the wedge, and for shrouding the wedge when in its disengaged mode, is disposed upstream from the wedge. Guides for performing lap welds, fin welds and hem welds, as well as many variations thereupon, are also disclosed.
摘要翻译：公开了一种热楔，自动缝焊机。焊机由具有基板，马达壳体和从马达壳体延伸的支撑臂的底盘组成。用于引导相对的材料片材的S形引导件位于基板和马达壳体之间。从支撑臂悬挂的电动机壳体的下游设置有用于被驱动的上压辊的可垂直移动的悬架，该驱动上压辊可与基板上的从动下压辊闭塞。也可以从支撑臂垂直移动和可调节悬挂的热楔。用于在楔形物之上和之下引导材料的角形护罩，以及当处于其脱离模式时用于遮蔽楔形物的楔形护罩设置在楔形物的上游。还公开了用于执行搭接焊接，翅片焊接和折边焊接的指导，以及其上的许多变化。

99. 发明授权

US5656092A Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter 失效
标题翻译：用于从离子注入机的内部区域捕获和去除污染物颗粒的装置
公开(公告)号：US5656092A
公开(公告)日：1997-08-12
申请号：US574242
申请日：1995-12-18
申请人： Julian G. Blake , Robert Becker , David Chipman , Mary Jones , Lyudmila Menn , Frank Sinclair , Dale K. Stone
发明人： Julian G. Blake , Robert Becker , David Chipman , Mary Jones , Lyudmila Menn , Frank Sinclair , Dale K. Stone
IPC分类号： C23C14/48 , H01J37/16 , H01J37/18 , H01J37/30 , H01J37/317 , H01L21/265 , C23C16/00
CPC分类号： H01J37/3002 , H01J37/3171 , H01J2237/022
摘要： A method of capturing and removing contaminant particles moving within an evacuated interior region of an ion beam implanter is disclosed. The steps of the method include: providing a particle collector having a surface to which contaminant particles readily adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time. An ion implanter in combination with a particle collector for trapping and removing contaminant particles moving in an evacuated interior region of the implanter traversed by an ion beam is also disclosed, the particle collector including a surface to which the contaminant particles readily adhere and securement means for releasably securing the particle collector to the implanter such that the particle adhering surface is in fluid communication with the evacuated interior region of the implanter.
摘要翻译：公开了一种捕获和去除在离子束注入机的抽空的内部区域内移动的污染物颗粒的方法。该方法的步骤包括：提供具有易于粘附污染物颗粒的表面的颗粒收集器; 将颗粒收集器固定到注入机，使得颗粒粘附表面与在内部区域内移动的污染物颗粒流体连通; 并且在预定时间段之后从所述注入机移除所述颗粒收集器。还公开了一种与用于捕获和去除在离子束穿过的注入器的抽空的内部区域中移动的污染物颗粒的离子注入机，该颗粒收集器包括污染物颗粒易于粘附的表面和固定装置将颗粒收集器可释放地固定到注入机，使得颗粒粘附表面与注入机的抽空的内部区域流体连通。

100. 发明授权

US5525807A Ion implantation device 失效
标题翻译：离子注入装置
公开(公告)号：US5525807A
公开(公告)日：1996-06-11
申请号：US465420
申请日：1995-06-05
申请人： Suguru Hirokawa , Frank Sinclair , Neil E. DeMario
发明人： Suguru Hirokawa , Frank Sinclair , Neil E. DeMario
IPC分类号： H01J37/304 , H01J37/317 , H01L21/687 , H01J37/00
CPC分类号： H01L21/68728 , H01J37/304 , H01J37/3171 , H01L21/68764 , H01L21/68771 , H01J2237/202 , H01J2237/31703
摘要： An ion implantation device equipped with a high-speed driving device which causes rotation of the a disk that supports semiconductor wafers around it outer periphery. A center position of the disk is the axis of the rotation of the high speed rotation. A low-speed driving device causes relative movement of the disk in a radial direction. The ion implantation device further has a control circuit which calculates the movement speed of the aforementioned low-speed driving device with reference to different spacings between wafers about the outer periphery and the distance from the center of the disk to the ion implantation position, and controls said low speed scan speed so that ions are uniformly implanted into the aforementioned wafers.
摘要翻译：一种配备有高速驱动装置的离子注入装置，其使围绕其外周的半导体晶片支撑的盘的旋转。盘的中心位置是高速旋转的旋转轴。低速驱动装置导致盘在径向上的相对运动。离子注入装置还具有控制电路，该控制电路基于围绕外周的晶片间的不同间隔和从盘的中心到离子注入位置的距离来计算上述低速驱动装置的移动速度，并且控制所述低速扫描速度使得离子均匀地注入到上述晶片中。

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