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91. 发明授权

US06852618B2 Combined barrier layer and seed layer 失效
标题翻译：组合屏障层和种子层
公开(公告)号：US06852618B2
公开(公告)日：2005-02-08
申请号：US09838493
申请日：2001-04-19
申请人： Dinesh Chopra
发明人： Dinesh Chopra
IPC分类号： H01L21/288 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/2885 , H01L21/76838 , H01L21/76843 , H01L21/76861 , H01L21/76873
摘要： Methods and apparatus for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems. The number of necessary processing steps to form conductive interconnects are reduced by removing the need to employ a seed layer interposed between the barrier layer and the conductive interconnect layer. This is accomplished in part through the electrochemical reduction of oxides on a dual-purpose layer. The present invention can be advantageously utilized to deposit copper interconnects onto tungsten.
摘要翻译：用于形成用于诸如半导体芯片，存储器件，半导体管芯，电路模块和电子系统的制品中的导电互连层的方法和装置。通过去除需要使用介于阻挡层和导电互连层之间的种子层来减少形成导电互连的必要处理步骤的数量。这部分地通过在两用层上的氧化物的电化学还原来实现。本发明可以有利地用于将铜互连件沉积到钨上。

92. 发明授权

US06756301B2 Method of forming a metal seed layer for subsequent plating 有权
标题翻译：形成后续镀覆金属种子层的方法
公开(公告)号：US06756301B2
公开(公告)日：2004-06-29
申请号：US10285552
申请日：2002-11-01
申请人： Terry L. Gilton , Dinesh Chopra
发明人： Terry L. Gilton , Dinesh Chopra
IPC分类号： H01L214763
CPC分类号： H01L21/76874 , H01L21/76843 , H01L21/76873 , H01L2221/1089
摘要： A method of forming a metal seed layer, preferably a copper layer, for subsequent electrochemical deposition. The metal seed layer is formed by the oxidation-reduction reaction of a metal salt with a reducing agent present in a layer on the substrate to be plated. Metal interconnects for semiconductor devices may be produced by the method, which has the advantage of forming the metal seed layer by a simple electrochemical plating process that may be combined with the plating of the interconnect itself as a single-bath operation.
摘要翻译：形成用于随后的电化学沉积的金属种子层，优选铜层的方法。金属种子层通过金属盐与存在于被镀基板上的层中的还原剂的氧化还原反应而形成。用于半导体器件的金属互连可以通过该方法制造，该方法具有通过简单的电化学电镀工艺形成金属种子层的优点，该电镀方法可以与互连本身的电镀作为单浴操作组合。

93. 发明授权

US06746316B2 Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads 失效
公开(公告)号：US06746316B2
公开(公告)日：2004-06-08
申请号：US10300372
申请日：2002-11-19
申请人： Dinesh Chopra , Scott G Meikle
发明人： Dinesh Chopra , Scott G Meikle
IPC分类号： B24B5300
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone. The used planarizing solution, for example, can be removed either while the substrate assembly is moved through the planarizing zone, or between planarizing stages of a multi-stage planarizing process. In another aspect of the invention, a planarizing machine for planarizing microelectronic-device substrate assemblies includes removing unit at the accumulation zone to actively remove used planarizing solution from the accumulation zone on the stationary planarizing pad.

94. 发明授权

US06730609B2 Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device 失效
公开(公告)号：US06730609B2
公开(公告)日：2004-05-04
申请号：US09974105
申请日：2001-10-09
申请人： Bradley J. Howard , Dinesh Chopra
发明人： Bradley J. Howard , Dinesh Chopra
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76844 , H01L21/76888
摘要： A method used to fabricate a semiconductor device comprises etching a dielectric which results in an undesirable charge buildup along a sidewall formed in the dielectric during the etch. The charge buildup along a top and a bottom of the sidewall can reduce the etch rate thereby resulting in excessive etch times and undesirable etch opening profiles. To remove the charge, a sacrificial conductive layer is formed which electrically shorts the upper and lower portions of the sidewall and eliminates the charge. In another embodiment, a gas is used to remove the charge. After removing the charge, the dielectric etch may continue. Various embodiments of the inventive process and in-process structures are described.

95. 发明授权

US06609957B2 Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads 有权
公开(公告)号：US06609957B2
公开(公告)日：2003-08-26
申请号：US09854245
申请日：2001-05-11
申请人： Dinesh Chopra , Scott G. Meikle
发明人： Dinesh Chopra , Scott G. Meikle
IPC分类号： B24B5300
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone. The used planarizing solution, for example, can be removed either while the substrate assembly is moved through the planarizing zone, or between planarizing stages of a multi-stage planarizing process. In another aspect of the invention, a planarizing machine for planarizing microelectronic-device substrate assemblies includes removing unit at the accumulation zone to actively remove used planarizing solution from the accumulation zone on the stationary planarizing pad.

96. 发明授权

US06561878B2 Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads 有权
公开(公告)号：US06561878B2
公开(公告)日：2003-05-13
申请号：US09854282
申请日：2001-05-11
申请人： Dinesh Chopra , Scott G. Meikle
发明人： Dinesh Chopra , Scott G. Meikle
IPC分类号： B24B5300
CPC分类号： B24B37/04 , B24B57/02 , H01L21/3212
摘要： Apparatuses and methods for planarizing a microelectronic-device substrate assembly on a planarizing pad. In one aspect of the invention, material is removed from the substrate assembly by pressing the substrate assembly against a planarizing surface of a planarizing pad and moving the substrate assembly across the planarizing surface through a planarizing zone. The method also includes replacing at least a portion of a used volume of planarizing solution on the planarizing surface with fresh planarizing solution during the planarization cycle of a single substrate assembly. The used planarizing solution can be replaced with fresh planarizing solution by actively removing the used planarizing solution from the pad with a removing unit and depositing fresh planarizing solution onto the pad in the planarizing zone. The used planarizing solution, for example, can be removed either while the substrate assembly is moved through the planarizing zone, or between planarizing stages of a multi-stage planarizing process. In another aspect of the invention, a planarizing machine for planarizing microelectronic-device substrate assemblies includes removing unit at the accumulation zone to actively remove used planarizing solution from the accumulation zone on the stationary planarizing pad.

97. 发明授权

US06545357B2 Metal nitride barrier layer and electroplating seed layer with the same metal as the metal nitride layer 有权
标题翻译：金属氮化物阻挡层和与金属氮化物层具有相同金属的电镀种子层
公开(公告)号：US06545357B2
公开(公告)日：2003-04-08
申请号：US09853451
申请日：2001-05-09
申请人： Dinesh Chopra
发明人： Dinesh Chopra
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A barrier layer material and method of forming the same is disclosed. The method includes depositing a graded metal nitride layer in a single deposition chamber, with a high nitrogen content at a lower surface and a high metal content at an upper surface. In the illustrated embodiment, a metal nitride with a 1:1 nitrogen-to-metal ratio is initially deposited into a deep void, such as a via or trench, by reactive sputtering of a metal target in nitrogen atmosphere. After an initial thickness is deposited, flow of nitrogen source gas is reduced and sputtering continues, producing a metal nitride with a graded nitrogen content. After the nitrogen is stopped, deposition continues, resulting in a substantially pure metal top layer. This three-stage layer includes a highly conductive top layer, upon which copper can be directly electroplated without a separate seed layer deposition. Advantageously, native oxide on the top metal surface can be cleaned in situ by reversing polarity in the electroplating solution just prior to plating.
摘要翻译：公开了一种阻挡层材料及其形成方法。该方法包括在单个沉积室中沉积梯度金属氮化物层，在下表面具有高氮含量和在上表面具有高金属含量。在所示实施例中，通过金属靶在氮气气氛中的反应溅射，首先将具有1：1氮 - 金属比率的金属氮化物沉积到诸如通孔或沟槽的深空隙中。在沉积初始厚度之后，氮源气体的流动减少并继续溅射，产生具有梯度氮含量的金属氮化物。在氮气停止之后，继续沉积，导致基本上纯的金属顶层。该三级层包括高导电顶层，铜可直接电镀而不需要单独的种子层沉积。有利地，顶部金属表面上的天然氧化物可以在电镀之前通过反转电镀溶液中的极性来原位清洗。

98. 发明授权

US06419554B2 Fixed abrasive chemical-mechanical planarization of titanium nitride 有权
公开(公告)号：US06419554B2
公开(公告)日：2002-07-16
申请号：US09339735
申请日：1999-06-24
申请人： Dinesh Chopra , Gundu Sabde
发明人： Dinesh Chopra , Gundu Sabde
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B9/065 , B24B37/042 , C09K13/00 , C09K13/04 , C09K13/06 , H01L21/3212 , H01L21/7684 , Y10T29/49156
摘要： Planarizing solutions, and their methods of use, for removing titanium nitride from the surface of a substrate using a fixed-abrasive planarizing pad. The planarizing solutions take the form of an etchant solution or an oxidizing solution. The etchant solutions are aqueous solutions containing an etchant and a buffer. The etchant contains one or more etching agents selective to titanium nitride. The oxidizing solutions are aqueous solutions containing an oxidizer and a buffer. The oxidizer contains one or more oxidizing agents selective to titanium nitride. In either solution, i.e., etchant or oxidizing solution, the buffer contains one or more buffering agents. Titanium nitride layers planarized in accordance with the invention may be utilized in the production of integrated circuits, and various apparatus utilizing such integrated circuits.

99. 发明授权

US06361411B1 Method for conditioning polishing surface 失效
标题翻译：调理抛光面的方法
公开(公告)号：US06361411B1
公开(公告)日：2002-03-26
申请号：US09494548
申请日：2000-01-31
申请人： Dinesh Chopra , Scott E. Moore
发明人： Dinesh Chopra , Scott E. Moore
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B21/04 , B24B53/017
摘要： A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads. The conditioning device may be adjusted or controlled in response to surface characteristics data obtained by measuring polished wafers.
摘要翻译：化学机械抛光装置设置有用于调节网状抛光垫的下游装置。该装置可以用于调节衬垫的上光部分，然后可以再次使用经调节的衬垫部分进行抛光。调理装置优选地布置成对釉面垫的不同部分施加不同的调理处理。调节装置可以具有以不同速度旋转的辊段。或者，装置可以具有在衬垫表面处提供不同转速的非圆柱形辊，或者该装置可以在垫的不同部分处施加不同的压力。该装置可以布置成在衬垫的宽度上提供均匀的调节。本发明适用于平面化半导体晶片的方法。除了网状垫之外，本发明可用于调节圆形垫。可以根据通过测量抛光晶片获得的表面特性数据来调节或控制调理装置。

100. 发明授权

US06196899B1 Polishing apparatus 有权
标题翻译：抛光设备
公开(公告)号：US06196899B1
公开(公告)日：2001-03-06
申请号：US09336759
申请日：1999-06-21
申请人： Dinesh Chopra , Scott E. Moore
发明人： Dinesh Chopra , Scott E. Moore
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B21/04 , B24B53/017
摘要： A chemical-mechanical polishing apparatus is provided with a downstream device for conditioning a web-shaped polishing pad. The device may be used to condition a glazed portion of the pad, and then the conditioned pad portion may be used again for polishing. The conditioning device is preferably arranged to apply different conditioning treatments to different portions of the glazed pad. The conditioning device may have roller segments that rotate at different speeds. Alternatively, the device may have non-cylindrical rollers that provide different rotational speeds at the pad surface, or the device may apply different pressures at different portions of the pad. The device may be arranged to provide uniform conditioning across the width of the pad. The invention is applicable to methods of planarizing semiconductor wafers. The invention may be used to condition circular pads in addition to web-shaped pads. The conditioning device may be adjusted or controlled in response to surface characteristics data obtained by measuring polished wafers.
摘要翻译：化学机械抛光装置设置有用于调节网状抛光垫的下游装置。该装置可以用于调节衬垫的上光部分，然后可以再次使用经调节的衬垫部分进行抛光。调理装置优选地布置成对釉面垫的不同部分施加不同的调理处理。调节装置可以具有以不同速度旋转的辊段。或者，装置可以具有在衬垫表面处提供不同转速的非圆柱形辊，或者该装置可以在垫的不同部分处施加不同的压力。该装置可以布置成在衬垫的宽度上提供均匀的调节。本发明适用于平面化半导体晶片的方法。除了网状垫之外，本发明可用于调节圆形垫。可以根据通过测量抛光晶片获得的表面特性数据来调节或控制调理装置。

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