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    • 94. 发明申请
    • TAPERED STRUCTURE FOR PROVIDING COUPLING BETWEEN EXTERNAL OPTICAL DEVICE AND PLANAR OPTICAL WAVEGUIDE AND METHOD OF FORMING THE SAME
    • 用于提供外部光学装置与平面光波导之间的耦合的光栅结构及其形成方法
    • US20050175286A1
    • 2005-08-11
    • US10775872
    • 2004-02-10
    • Vipulkumar PatelPrakash GothoskarRobert MontgomeryMargaret Ghiron
    • Vipulkumar PatelPrakash GothoskarRobert MontgomeryMargaret Ghiron
    • G02B6/10G02B6/34G02B6/42
    • G02B6/42G02B6/34G02B6/4214
    • Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.
    • 形成锥形渐逝耦合区域的方法,用于与例如SOI结构形成的相对薄的硅光波导一起使用。 在用作耦合衬底的硅衬底中形成锥形渐逝耦合区,然后耦合衬底连接到SOI结构。 使用灰度光刻工艺来限定光致抗蚀剂中的锥形区域,此后的锥形图案转移到硅衬底中。 然后使用显示比硅光波导层(例如二氧化硅)低的折射率的材料来填充衬底中的锥形开口。 有利地,可以使用常规的硅处理步骤以与锥形渐逝耦合区域适当的关系在硅衬底(即成角度的表面,V形槽)中形成耦合面。 耦合面可以形成为与锥形渐逝耦合区域相邻,或者通过硅衬底的相对侧形成。