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    • 95. 发明授权
    • Method for producing a magnetic bias field
    • 用于产生磁偏置场的方法
    • US4567576A
    • 1986-01-28
    • US579996
    • 1984-02-14
    • Yoshio TawaraKen OhashiHideaki Kikuchi
    • Yoshio TawaraKen OhashiHideaki Kikuchi
    • C22C19/07C22C19/00G11C11/14H01F1/053H01F1/055G11C5/02
    • H01F1/0557C22C19/00H01F1/055
    • The invention provides a method for producing a magnetic bias field in a magnetic bubble domain memory device. The method comprises coupling a magnetic bubble domain element with a permanent magnet. The permanent magnet is formed of a rare earth metal-containing alloy for use in the bubble domain memory device in respect of the reversible temperature coefficient of the magnet capable of being in compliance with the temperature coefficient of the bubble disappearance field of the memory device. The alloy characteristically contains nickel as an essential component so that the composition of the alloy is expressed by the formulaR(Co.sub.1-x-y Cu.sub.x Ni.sub.y).sub.z,in which R is a rare earth element, e.g. samarium or cerium, and s, y and z are each a positive number from 0.001 to 0.4, from 0.001 to 0.6 and from 4.0 to 9.0, respectively, with the proviso that x+y is smaller than 1.
    • 本发明提供一种用于在磁性气泡区域存储装置中产生磁偏置场的方法。 该方法包括将磁性气泡区域元件与永磁体连接。 永久磁铁由用于气泡域记忆装置的含稀土金属合金形成,该磁体可以与磁记录装置的气泡消失场的温度系数一致。 该合金特征性地包含镍作为必要组分,使得合金的组成由式R(Co1-x-yCuxNiy)z表示,其中R是稀土元素,例如, 钐或铈,s,y和z分别为0.001至0.4,从0.001至0.6和4.0至9.0的正数,条件是x + y小于1。