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    • 95. 发明授权
    • Reflective mask blank for EUV lithography
    • EUV光刻用反光罩
    • US08137872B2
    • 2012-03-20
    • US12952254
    • 2010-11-23
    • Kazuyuki Hayashi
    • Kazuyuki Hayashi
    • G03F1/00B32B9/00
    • G03F1/24B82Y10/00B82Y40/00G03F1/84Y10T428/31616
    • To provide a reflective mask blank for EUV lithography having a low reflective layer having a low reflectance in the wavelength region of EUV light and an inspection light for a mask pattern, particularly having low reflection properties in the entire wavelength region (190 to 260 nm) of an inspection light for a mask pattern, and having a high etching rate in chlorine type gas etching. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer to reflect EUV light, an absorber layer to absorb EUV light and a low reflective layer to an inspection light (wavelength:190 nm to 260 nm) for a mask pattern, formed in this order over the substrate, wherein the low reflective layer contains silicon (Si) and nitrogen (N) in a total content of at least 95 at %, has a Si content of from 5 to 80 at %, and a N content of from 15 to 90 at %.
    • 为了提供一种用于EUV光刻的反射掩模板,其具有在EUV光的波长区域中具有低反射率的低反射层和用于掩模图案的检查光,特别是在整个波长区域(190-260nm)具有低反射特性, 的掩模图案的检查光,并且在氯气蚀刻中具有高蚀刻速率。 用于EUV光刻的反射掩模板,包括基板和反射EUV光的反射层,用于将掩模图案的EUV光和低反射层吸收到检查光(波长:190nm至260nm)的吸收层 ,其中低反射层含有至少95原子%的总含量的硅(Si)和氮(N),Si含量为5-80原子%,N 含量从15%到90%。
    • 97. 发明授权
    • Reflective mask blank for EUV lithography
    • EUV光刻用反光罩
    • US07906259B2
    • 2011-03-15
    • US12205967
    • 2008-09-08
    • Kazuyuki HayashiKazuo KadowakiTakashi SugiyamaMasaki Mikami
    • Kazuyuki HayashiKazuo KadowakiTakashi SugiyamaMasaki Mikami
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00G03F1/22
    • To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at % and less than 5 at %, the Si content is from 1 to 25 at %, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.
    • 为了提供具有吸收层的EUV光刻用的反射掩模板,其对EUV光和图案检查光的波长范围内的光呈现低反射率,并且易于控制以具有所需的膜组成和膜厚度。 一种用于EUV光刻的反射掩模板,包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层,其中吸收层包含钽(Ta),硼(B) ,硅(Si)和氮(N),并且在吸收层中,B含量为至少1原子%且小于5原子%,Si含量为1至25原子%,Ta的组成比 至N(Ta:N)为8:1至1:1。