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91. 发明申请

US20120056285A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120056285A1
公开(公告)日：2012-03-08
申请号：US13216464
申请日：2011-08-24
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161
摘要： There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer.
摘要翻译：提供了包括具有垂直于膜面的磁化的存储层的存储元件; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录的信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，绝缘层由氧化膜形成，并且存储层由Co-Fe- B，与绝缘层的界面附近B的浓度低，B的浓度随着从绝缘层后退而增加。

92. 发明申请

US20110317464A1 PORTABLE INFORMATION APPARATUS 失效
标题翻译：便携式信息装置
公开(公告)号：US20110317464A1
公开(公告)日：2011-12-29
申请号：US13149089
申请日：2011-05-31
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C7/02 , G11C5/14
CPC分类号： G06F1/1658
摘要： The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body.
摘要翻译：本公开提供了一种便携式信息装置，其包括装置主体，当使用便携式信息装置时安装在装置主体上的附带物品，设置在装置主体的一部分处的固态磁存储器，偶然物品被安装并适于根据磁性材料的磁化状态保持信息，以及设置在附带物品上的磁屏蔽，当附带的物品安装在设备上时，该屏蔽件包括与固态磁性存储器相对的部分主体。

93. 发明授权

US09093211B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US09093211B2
公开(公告)日：2015-07-28
申请号：US13451043
申请日：2012-04-19
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01F10/32 , G11C11/16 , H01L43/08 , H01F41/30 , H01L27/22 , H01F41/32 , B82Y40/00
CPC分类号： H01F10/3286 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/329 , H01F41/303 , H01F41/325 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.
摘要翻译：存储元件包括具有垂直于层表面的磁化的存储层，并且根据磁性材料的磁化状态存储信息; 具有作为存储层的信息并垂直于层表面的参考的磁化的固定磁化层; 由非磁性材料形成并夹在所述存储层和所述固定磁化层之间的夹层; 与所述中间层相对的与所述存储层相邻的矫顽力增强层，由Cr，Ru，W，Si或Mn形成; 以及由与矫顽力增强层相邻并与存储层相对的氧化物形成的自旋势垒层。使用由包括存储层，中间层和固定磁化层的层结构的层叠方向上的电流引起的自旋转矩磁化反转，存储层磁化反转，从而存储信息。

94. 发明授权

US08743594B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08743594B2
公开(公告)日：2014-06-03
申请号：US13227144
申请日：2011-09-07
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： G11C11/00 , G11C11/16 , H01F10/32
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录相对于存储层执行信息，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，并且以与膜的接触形式形成Ta膜与磁化固定层的绝缘层侧相对的面。

95. 发明授权

US08693239B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08693239B2
公开(公告)日：2014-04-08
申请号：US13226953
申请日：2011-09-07
申请人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Masanori Hosomi , Kazuhiro Bessho , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.
摘要翻译：公开了一种存储元件，其包括具有垂直于膜面的磁化和其磁化方向根据信息而变化的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中所述存储层具有Co-Fe-B层和属于1A组，2A组，3A组中的任一个的元件的层叠结构 5A组或6A组，沿层叠结构的层叠方向注入自旋极化的电子，由此存储层的磁化方向变化，并且相对于存储层进行信息的记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量。

96. 发明授权

US08692341B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08692341B2
公开(公告)日：2014-04-08
申请号：US13332664
申请日：2011-12-21
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L29/82
CPC分类号： G11C11/161
摘要： A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide.
摘要翻译：存储元件包括：具有垂直于膜表面的磁化的存储层，磁化方向根据信息而改变; 磁化固定层，其具有与用作存储在存储层中的信息的基底的膜表面垂直的磁化; 以及设置在所述存储层和所述磁化固定层之间的非磁性物质的绝缘层。在上述存储元件中，使用由包括存储层，绝缘层和磁化固定层的层结构的层叠方向流动的电流产生的自旋转矩磁化反转来使存储层的磁化反转，以存储信息中，存储层在与绝缘层相反的一侧直接设置有层，该层包括导电氧化物。

97. 发明授权

US08547731B2 Memory device having a magnetic layer with a perpendicular direction of magnetization relative to a direction of magnetization of a fixed magnetization layer 有权
标题翻译：存储器件具有相对于固定磁化层的磁化方向具有垂直磁化方向的磁性层
公开(公告)号：US08547731B2
公开(公告)日：2013-10-01
申请号：US13098996
申请日：2011-05-02
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/00 , G11C11/15 , H01L29/82
CPC分类号： G11C11/161
摘要： Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.
摘要翻译：这里公开了一种存储器件，包括：存储元件，其包括存储层，用于根据磁性材料的磁化状态保存信息;固定磁化层，其通过非磁性层设置在存储层上，磁化方向固定在与膜表面平行的方向上，磁性层通过非磁性层而相对于存储层设置在与固定磁化层相反的一侧，并且其磁化方向为垂直于膜表面的方向; 以及使电流通过存储元件沿存储元件的层的层叠方向流过的布线。

98. 发明授权

US08546897B2 Magnetic memory element 有权
标题翻译：磁记忆元件
公开(公告)号：US08546897B2
公开(公告)日：2013-10-01
申请号：US13193935
申请日：2011-07-29
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.
摘要翻译：磁存储元件包括存储层，参考层和设置在存储层和参考层之间的自旋注入层。参考层具有其中包含20原子％以上且50原子％以下的Pt，厚度为1nm以上且5nm以下的至少两个CoPt层以其间设置有Ru层的层叠体的结构。 Ru层的厚度为0.45±0.05nm或0.9±0.1nm。此外，CoPt层的3倍晶体对称轴垂直于膜表面取向。参考层包括在与自旋注入层的界面处含有Co或Fe作为主要成分的1.5nm以下的高自旋极化层。

99. 发明授权

US08472243B2 Storage apparatus 有权
标题翻译：储存装置
公开(公告)号：US08472243B2
公开(公告)日：2013-06-25
申请号：US13155099
申请日：2011-06-07
申请人： Yutaka Higo , Hiroyuki Uchida , Hiroyuki Ohmori , Kazuhiro Bessho , Masanori Hosomi , Kazutaka Yamane
发明人： Yutaka Higo , Hiroyuki Uchida , Hiroyuki Ohmori , Kazuhiro Bessho , Masanori Hosomi , Kazutaka Yamane
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device.
摘要翻译：这里公开了一种存储装置，其包括被配置为包括布置成形成阵列的存储装置的单元阵列。每个存储装置具有：用于存储作为磁性物质的磁化状态的信息的存储层; 具有固定磁化方向的固定磁化层; 以及夹在所述存储层和所述固定磁化层之间的隧道绝缘层。在存储层上写入信息的操作中，产生写入电流以在存储层和固定磁化层的层叠方向上流动，以改变存储层的磁化方向。单元阵列被分成多个单元块。任何特定存储设备的存储层的热稳定性具有包括特定存储设备的单元块特有的值。

100. 发明授权

US08344467B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08344467B2
公开(公告)日：2013-01-01
申请号：US13116755
申请日：2011-05-26
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer.
摘要翻译：存储元件包括：存储层，其被配置为基于磁性材料的磁化状态保持信息，并且包括其磁化方向在垂直于膜平面，非磁性层和铁磁层的方向上的垂直磁化层其沿着膜平面的方向具有容易磁化的轴，并且具有相对于垂直于膜平面的方向倾斜角度在15度至45度范围内的磁化方向，所述存储层通过垂直磁化层和铁磁层，介于非磁性层和垂直磁化层与铁磁层之间的磁耦合; 磁化钉扎层; 和非磁性中间层。

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