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91. 发明授权

US07538357B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07538357B2
公开(公告)日：2009-05-26
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L29/207
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
摘要翻译：一种半导体发光器件包括：包括形成在衬底上的台面的空腔，所述台面具有有源层，并且通过围绕所述台面形成的凹部隔离; 以及填充有凹部的树脂层。在作为输出从有源层发射的光的光输出面的空腔的上表面形成具有直径小于发射光的发射波长的开口的金属膜。

92. 发明申请

US20080258243A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20080258243A1
公开(公告)日：2008-10-23
申请号：US12060505
申请日：2008-04-01
申请人： Masayuki Kuroda , Tetsuzo Ueda
发明人： Masayuki Kuroda , Tetsuzo Ueda
IPC分类号： H01L49/00
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/452 , H01L29/518 , H01L29/66462
摘要： A field effect transistor includes: a first nitride semiconductor layer having a plane perpendicular to a (0001) plane or a plane tilted with respect to the (0001) plane as a main surface; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider bandgap than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; and a source electrode and a drain electrode formed so as to contact at least a part of the second nitride semiconductor layer or the third nitride semiconductor layer. A recess that exposes a part of the second nitride semiconductor layer is formed between the source electrode and the drain electrode in the third nitride semiconductor layer. A gate electrode is formed in the recess and an insulating film is formed between the third nitride semiconductor layer and the gate electrode.
摘要翻译：场效应晶体管包括：具有垂直于（0001）面的平面或相对于（0001）面倾斜的平面作为主表面的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 以及形成为与第二氮化物半导体层或第三氮化物半导体层的至少一部分接触的源电极和漏电极。在第三氮化物半导体层中的源电极和漏电极之间形成露出第二氮化物半导体层的一部分的凹部。在凹部中形成栅电极，在第三氮化物半导体层和栅电极之间形成绝缘膜。

93. 发明授权

US07439595B2 Field effect transistor having vertical channel structure 有权
标题翻译：场效应晶体管具有垂直沟道结构
公开(公告)号：US07439595B2
公开(公告)日：2008-10-21
申请号：US11287482
申请日：2005-11-28
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L29/76
CPC分类号： H01L29/8122 , H01L29/2003 , H01L29/66856
摘要： A first SiO2 thin film, a tungsten gate electrode, and a second SiO2 thin film are selectively formed on a first n+-type GaN contact semiconductor layer in that order and in a multilayer film structure having the three layers, a stripe-shaped opening is formed. Via the opening, an undoped GaN channel semiconductor layer and the second n+-type GaN contact semiconductor layer are formed so that both the layers are regrown by, for example, metal organic chemical vapor deposition. A source electrode and a drain electrode are formed so as to contact the corresponding second and first n+-type GaN contact semiconductor layers. The regrown undoped GaN channel semiconductor layer and the regrown second n+-type GaN contact semiconductor layer are horizontally grown portions and hence, the contact area of the electrode can be made larger than the area of the opening.
摘要翻译：第一个SiO 2薄膜，钨栅电极和第二SiO 2薄膜选择性地形成在第一n + + / GaN接触半导体层，并且在具有三层的多层膜结构中形成条形开口。通过开口，形成未掺杂的GaN沟道半导体层和第二n + + + GaN接触半导体层，使得这两个层通过例如金属有机化学气相沉积而再生长。源电极和漏电极形成为与相应的第二和第n + +型GaN接触半导体层接触。再生未掺杂的GaN沟道半导体层和再生长的第二n + + + GaN接触半导体层是水平生长的部分，因此可以使电极的接触面积大于开口的面积。

94. 发明授权

US07411232B2 Semiconductor photodetecting device and method of manufacturing the same 有权
标题翻译：半导体光电检测装置及其制造方法
公开(公告)号：US07411232B2
公开(公告)日：2008-08-12
申请号：US11180581
申请日：2005-07-14
申请人： Tetsuzo Ueda , Seiichiro Tamai
发明人： Tetsuzo Ueda , Seiichiro Tamai
IPC分类号： H01L31/113
CPC分类号： H01L31/101 , H01L27/14625 , H01L27/14647 , H01L31/02165 , H01L31/02327
摘要： A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an epitaxial layer formed on the semiconductor substrate by epitaxial growth. The epitaxial layer has a multilayer structure including: a first pn junction layer; a first insulating layer; a second pn junction layer; a second insulating layer; and a third pn junction layer. The first insulating layer and the second insulating layer have openings, and the first pn junction layer and the second pn junction layer are adjacent to each other through the openings of the first insulating layer which is placed in between these pn junction layers, and the second pn junction layer and the third pn junction layer are adjacent to each other through the openings of the second insulating layer which is placed in between these pn junction layers. Each of the insulating layers has a periodic structure of refractive indices in the stacking direction as well as a periodic structure of similar-shaped openings which are concentric in the in-plane direction, and therefore has filtering and light condensing functions for the pn junction layer which is formed beneath the insulating layer.
摘要翻译：提供了一种半导体光电检测装置，用于使固态图像传感器能够满足更高质量成像的要求，并且降低成本。本发明的受光器件包括：半导体衬底; 以及通过外延生长在半导体衬底上形成的外延层。外延层具有多层结构，其包括：第一pn结层; 第一绝缘层; 第二pn结层; 第二绝缘层; 和第三个pn结层。第一绝缘层和第二绝缘层具有开口，并且第一pn结层和第二pn结层通过放置在这些pn结层之间的第一绝缘层的开口彼此相邻，并且第二绝缘层 pn结层和第三pn结层通过放置在这些pn结层之间的第二绝缘层的开口彼此相邻。绝缘层中的每一层具有层叠方向的折射率的周期性结构以及在面内方向上同心的类似形状的开口的周期性结构，因此具有用于pn结层的滤波和聚光功能其形成在绝缘层下方。

95. 发明申请

US20080079023A1 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080079023A1
公开(公告)日：2008-04-03
申请号：US11890480
申请日：2007-08-07
申请人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
发明人： Masahiro Hikita , Tetsuzo Ueda , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
IPC分类号： H01L21/337 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/432 , H01L29/66462
摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
摘要翻译：氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅电极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

96. 发明授权

US07268370B2 Phosphor, semiconductor light emitting device, and fabrication method thereof 有权
公开(公告)号：US07268370B2
公开(公告)日：2007-09-11
申请号：US10860394
申请日：2004-06-04
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： C09K11/7709 , C09K11/595 , C09K11/646 , C09K11/70 , C09K11/7734 , C09K11/7739 , C09K11/7774 , C09K11/883 , H01L33/0066 , H01L33/505 , H01L2224/14 , Y02B20/181
摘要： A phosphor that emits white light due to excitation by a light emitting diode capable of emitting blue or ultraviolet light includes: a substrate that allows transmission of visible light; and a semiconductor layer formed on the substrate.

97. 发明申请

US20070205407A1 Nitride semiconductor device and method for fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070205407A1
公开(公告)日：2007-09-06
申请号：US11712482
申请日：2007-03-01
申请人： Hisayoshi Matsuo , Tatsuo Morita , Tetsuzo Ueda , Daisuke Ueda
发明人： Hisayoshi Matsuo , Tatsuo Morita , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01L29/06
CPC分类号： H01L29/045 , H01L29/1029 , H01L29/2003 , H01L29/7787 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/12
摘要： A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.
摘要翻译：氮化物半导体器件包括半导体层叠结构，其由具有第一主表面和与第一主表面相对并包括有源层的第二主表面的氮化物半导体形成。半导体堆叠结构的第一主表面形成有多个平面取向为{0001}面并且第二主面的平面取向为{1-101}面的凹陷。有源层沿{1-101}面形成。

98. 发明申请

US20070170441A1 Nitride semiconductor device and method for manufacturing the same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070170441A1
公开(公告)日：2007-07-26
申请号：US11698209
申请日：2007-01-26
申请人： Toshiyuki Takizawa , Jun Shimizu , Tetsuzo Ueda
发明人： Toshiyuki Takizawa , Jun Shimizu , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02647 , H01L21/0265 , H01L33/32 , H01L2933/0083 , H01S5/0207 , H01S5/2045 , H01S5/2223 , H01S5/2227 , H01S5/227 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括：具有主表面的衬底; 形成在所述基板的主面上的第一氮化物半导体层，具有与所述主面垂直的一个或多个凸部; 以及选择性地生长在第一氮化物半导体层的一个或多个凸部的侧面上的第二氮化物半导体层。

99. 发明申请

US20070117355A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070117355A1
公开(公告)日：2007-05-24
申请号：US11600067
申请日：2006-11-16
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Tatsuo Morita
IPC分类号： H01L21/20
CPC分类号： H01L29/452 , H01L29/045 , H01L29/0692 , H01L29/2003 , H01L29/8122
摘要： A semiconductor device includes: a first nitride semiconductor layer having at least one projection on an upper surface thereof; a second nitride semiconductor layer formed on a top surface of the projection of the first nitride semiconductor layer and having a higher carrier concentration than the first nitride semiconductor layer; a first electrode formed on the second nitride semiconductor layer so as to overhang like a canopy and functioning as one of a source and a drain; and a second electrode formed to the side of the projection on the first nitride semiconductor layer and functioning as a gate.
摘要翻译：半导体器件包括：在其上表面上具有至少一个突起的第一氮化物半导体层; 第二氮化物半导体层，其形成在所述第一氮化物半导体层的所述突起的顶表面上，并且具有比所述第一氮化物半导体层更高的载流子浓度; 第一电极，形成在第二氮化物半导体层上，以便像顶盖一样悬垂并用作源极和漏极之一; 以及第二电极，其形成在第一氮化物半导体层上的突起侧并用作栅极。

100. 发明授权

US07198671B2 Layered substrates for epitaxial processing, and device 有权
标题翻译：用于外延处理的分层衬底和器件
公开(公告)号：US07198671B2
公开(公告)日：2007-04-03
申请号：US09904131
申请日：2001-07-11
申请人： Tetsuzo Ueda
发明人： Tetsuzo Ueda
IPC分类号： C30B25/00
CPC分类号： H01L21/0262 , C23C16/44 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02532 , H01L21/0254 , H01L21/02658 , H01L33/007
摘要： A substrate comprising at least two layers which have different thermal expansion coefficients (TECs) is used for subsequent epitaxial growth of semiconductors. A typical example is an epitaxial growth of III-V Nitride (InGaAlBNAsP alloy semiconductor) on sapphire. Due to the thermal mismatch between III-V Nitrides and sapphire, epitaxially-processed wafers bow in a convex manner during cool down after the growth. A layered substrate compensates for the thermal mismatch between the epitaxial layered the top layer of the substrate, resulting in a flat wafer suitable for subsequent processing at high yields. The layered substrate is achieved by attaching to the back side of the substrate a material which has a lower TEC, for example silicon on the backside of the sapphire, to reduce or eliminate the bowing. Silicon is attached or grown on a sapphire wafer by such as wafer bonding or epitaxial growth. Since the above attachment process is done at an elevated temperature, the sapphire on silicon structure may bow in a convex manner at room temperature due to the thermal mismatch. Hence, for the subsequent growth of GaN on the sapphire on silicon wafer, direct heating is desirable rather than heating on a heat sink material. Another example is simultaneous epitaxial growths of GaN on a front side and silicon on the backside of the sapphire. A special growth system for this double-sided growth is also described.
摘要翻译：包含具有不同热膨胀系数（TEC）的至少两层的衬底用于半导体的随后的外延生长。一个典型的例子是在蓝宝石上III-V氮化物（InGaAlBNAsP合金半导体）的外延生长。由于III-V氮化物和蓝宝石之间的热不匹配，外延处理的晶片在生长后的冷却期间以凸起的方式弯曲。分层衬底补偿层叠在衬底顶层的外延之间的热失配，得到适合于以高产率进行后续处理的平坦晶片。层叠基板通过将具有较低TEC（例如蓝宝石背面的硅）的材料附着到基板的背面来实现，以减少或消除弯曲。硅通过诸如晶片结合或外延生长在蓝宝石晶片上附着或生长。由于上述附着过程在升高的温度下进行，所以由于热失配，硅结构上的蓝宝石可能在室温下以凸的方式弯曲。因此，对于在硅晶片上的蓝宝石上的随后的GaN生长，期望直接加热而不是对散热材料进行加热。另一个例子是在前侧的GaN的同时外延生长和蓝宝石背面的硅。还描述了这种双面增长的特殊增长系统。

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