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91. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

92. 发明申请

US20060273343A1 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same 有权
标题翻译： AlxInyGa1-x-yN混合晶体基板，其生长方法及其制造方法
公开(公告)号：US20060273343A1
公开(公告)日：2006-12-07
申请号：US11501817
申请日：2006-08-10
申请人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
发明人： Seiji Nakahata , Ryu Hirota , Kensaku Motoki , Takuji Okahisa , Kouji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
摘要翻译：将种子以规则的图案植入到下衬底上。在（1≤y≤1,0≤x≤1,0<= x <=1,0,0≤y≤1,0< x + y <= 1）混合晶体通过小平面生长法在种植植入的底物上生长。小面生长使种子凹陷在种子上方。小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。闭合缺陷积聚区（H）永久性停滞位错。释放位错，径向平面缺陷组件和线性缺陷组件被禁止。周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

93. 发明申请

US20060213429A1 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
公开(公告)号：US20060213429A1
公开(公告)日：2006-09-28
申请号：US11434744
申请日：2006-05-17
申请人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
发明人： Kensaku Motoki , Ryu Hirota , Takuji Okahisa , Seiji Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/406 , C30B23/002 , C30B25/02 , C30B29/403
摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

94. 发明授权

US07112826B2 Single crystal GaN substrate semiconductor device 有权
标题翻译：单晶GaN衬底半导体器件
公开(公告)号：US07112826B2
公开(公告)日：2006-09-26
申请号：US10700495
申请日：2003-11-05
申请人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
发明人： Kensaku Motoki , Takuji Okahisa , Seiji Nakahata , Ryu Hirota , Koji Uematsu
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02642 , H01L21/02647
摘要： Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
摘要翻译：将种子以规则的图案植入到下衬底上。通过小面生长法在种植植入的底物上生长GaN晶体。小面生长使种子凹陷在种子上方。小面从相邻区域组装到底坑的位错，并在底面下方形成闭合缺陷积聚区域（H）。闭合缺陷积聚区（H）永久性停滞位错。释放位错，径向平面缺陷组件和线性缺陷组件被禁止。周围伴随的低位错单晶区（Z）和超低位错单晶区（Y）是位错密度单晶。

95. 发明申请

US20050257733A1 III nitride crystal and method for producing same 审中-公开
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US20050257733A1
公开(公告)日：2005-11-24
申请号：US10524271
申请日：2004-05-24
申请人： Seiji Nakahata
发明人： Seiji Nakahata
IPC分类号： C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/32 , C30B33/06
CPC分类号： C30B29/40 , C30B25/18 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/02656
摘要： A group III nitride crystal having a small dislocation density and good quality and a production method for the group III nitride crystal are provided. The production method for the group III nitride crystal is characterized by growing a group III nitride crystal film 2 on a substrate 1, depositing a metallic film 3 thereon and, then, not only changing the metallic film 3 into a metallic nitride film 4 and, further, generating a pore 4h, but also forming a void portion 2b in the group III nitride crystal film 2 by performing a thermal treatment and, thereafter, filling the void portion 2b by a group III nitride crystal 5 for filling by further growing a group III nitride crystal and, subsequently, growing a group III nitride crystal 6 on the metallic nitride film 4.
摘要翻译：提供具有小的位错密度和良好质量的III族氮化物晶体和用于III族氮化物晶体的生产方法。 III族氮化物晶体的制造方法的特征在于在基板1上生长III族氮化物晶体膜2，在其上沉积金属膜3，然后不仅将金属膜3变成金属氮化物膜4，另外，通过进行热处理，在III族氮化物晶体膜2中产生孔4h，而且还形成空隙部分2b，然后通过III族氮化物晶体5填充空隙部分2b以进一步填充生长III族氮化物晶体，随后在金属氮化物膜4上生长III族氮化物晶体6。

96. 发明申请

US20050164419A1 Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device 有权
标题翻译： III族氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：US20050164419A1
公开(公告)日：2005-07-28
申请号：US10905845
申请日：2005-01-24
申请人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
发明人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
IPC分类号： H01L21/205 , C30B19/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/208 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： C30B9/10 , C30B7/10 , C30B19/02 , C30B25/18 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02625
摘要： Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.
摘要翻译：提供位错密度低且制造成本低的III族氮化物晶体基板，制造这种基板的方法，以及掺入III族氮化物晶体基板的III族氮化物半导体器件。 III族氮化物晶体衬底制造方法包括：通过液相外延将第一III族氮化物晶体（2）生长到基底衬底（1）上的步骤; 以及通过气相外延将第二III族氮化物晶体（3）生长到第一III族氮化物晶体（2）上的步骤。通过这种制造方法制造的III族氮化物晶体基板的位错密度为1×10 7位错/ cm 2。

97. 发明授权

US06410468B1 Si3N4 ceramic, Si-base composition for production thereof and processes for producing these 有权
公开(公告)号：US06410468B1
公开(公告)日：2002-06-25
申请号：US09899736
申请日：2001-07-05
申请人： Seiji Nakahata , Akira Yamakawa
发明人： Seiji Nakahata , Akira Yamakawa
IPC分类号： C04B35591
摘要： A slurry Si-base composition comprising an Si powder having a thickness of a surface oxide film ranging from 1.5 to 15 nm, 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant, the Si-base composition having a pH value adjusted to 8-12. This slurry Si-base composition is produced by a process which comprises subjecting Si powder to oxidation treatment at 200 to 800° C. in air, adding 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant to the oxidized Si powder and performing such a pH adjustment that the resultant mixture has a pH value of 8 to 12. The slurry Si-base composition not only enables producing a ceramic of Si3N4 at a lowered cost without the need to install explosionproof facilities but also allows the obtained Si3N4 ceramic having a relative density of at least 96% and a flexural strength of at least 800 MPa can be obtained.

98. 发明授权

US06284690B1 Si3N4 ceramic, Si-base composition for production thereof and processes for producing these 失效
标题翻译： Si3N4陶瓷，用于制造的Si基组合物及其制造方法
公开(公告)号：US06284690B1
公开(公告)日：2001-09-04
申请号：US08708933
申请日：1996-09-06
申请人： Seiji Nakahata , Akira Yamakawa
发明人： Seiji Nakahata , Akira Yamakawa
IPC分类号： C04B35591
CPC分类号： C04B35/591
摘要： A slurry Si-base composition comprising an Si powder having a thickness of a surface oxide film ranging from 1.5 to 15 nm, 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant, the Si-base composition having a pH value adjusted to 8-12. This slurry Si-base composition is produced by a process which comprises subjecting Si powder to oxidation treatment at 200 to 800° C. in air, adding 50 to 90% by weight of water, 0.2 to 7.5% by weight, in terms of oxide, of a sintering aid and 0.05 to 3% by weight of a dispersant to the oxidized Si powder and performing such a pH adjustment that the resultant mixture has a pH value of 8 to 12. The slurry Si-base composition not only enables producing a ceramic of Si3N4 at a lowered cost without the need to install explosionproof facilities but also allows the obtained Si3N4 ceramic having a relative density of at least 96% and a flexural strength of at least 800 MPa can be obtained.
摘要翻译：一种浆料Si基组合物，其包含Si粉末，其表面氧化膜的厚度为1.5至15nm，50至90重量％的水，0.2至7.5重量％的氧化物，烧结助剂和0.05〜3重量％的分散剂，所述Si基组合物的pH值调节至8-12。该浆料Si基组合物是通过以下方法制造的，该方法包括使Si粉末在空气中在200至800℃下进行氧化处理，加入50至90重量％的水，0.2至7.5重量％的氧化物的烧结助剂和0.05〜3重量％的分散剂与氧化的Si粉末进行这种pH调节，使得所得混合物的pH值为8〜12。浆料Si-碱组合物不仅能够制备 Si3N4的陶瓷，而不需要安装防爆设备，而且还可以获得所获得的相对密度至少为96％，弯曲强度至少为800MPa的Si 3 N 4陶瓷。

99. 发明授权

US5756411A Sintered body of silicon nitride and method of producing the same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US5756411A
公开(公告)日：1998-05-26
申请号：US696823
申请日：1996-08-20
申请人： Seiji Nakahata , Akira Yamakawa , Hisao Takeuchi
发明人： Seiji Nakahata , Akira Yamakawa , Hisao Takeuchi
IPC分类号： C04B35/591
CPC分类号： C04B35/591
摘要： The invention reduces the time required for nitriding in the process of reaction sintering for production of a sintered body of silicon nitride, thereby improving productivity, and provides a sintered body of silicon nitride having sufficient compactness and high strength which can be produced by reaction sintering. The sintered body is Si.sub.3 N.sub.4 having an unpaired electron density of 10.sup.15 /cm.sup.3 to 10.sup.21 /cm.sup.3. The sintered body is produced through reaction sintering by using a Si powder having an unpaired electron density of 10.sup.15 -10.sup.20 /cm.sup.3, which is obtained by annealing a commercially available Si powder at temperatures of 300.degree. to 800.degree. C. in other than nitrogen atmosphere for 3-5 hours. In particular, the sintered body is produced by adding to the so obtained Si powder, together with a sintering assistant, an element having a valence of, particularly, from +1 to +3, the element having a covalent bond radius RM which bears such a relation with the covalent bond radius RSi of Si that (RM - RSi)/RSi
摘要翻译： PCT No.PCT / JP95 / 02679 Sec。 371日期1996年8月20日 102（e）日期1996年8月20日PCT 1995年12月26日PCT公布。 WO96 / 20144 PCT出版物日本1996年7月4日本发明减少了在制造氮化硅烧结体的反应烧结过程中氮化所需的时间，从而提高了生产率，并提供了具有足够的致密性和高强度的氮化硅烧结体，其可以是通过反应烧结制备。烧结体是不成对电子密度为1015 / cm 3至1021 / cm 3的Si 3 N 4。通过使用不成对电子密度为1015〜1020 / cm 3的Si粉末，通过反应烧结制造烧结体，其通过在氮气气氛以外的温度下在300℃〜800℃下退火市售的Si粉末而得到持续3-5小时。特别地，通过将如此获得的Si粉末与烧结助剂一起加入具有共价键半径RM的元素（特别是从+1至+3的价数）特别是这样的元素制备烧结体与RS的共价键半径RSi（RM-RSi）/ RSi <0.5的关系，或作为氮气发生剂的元素的化合物，并使所得复合材料进行反应烧结。

100. 发明授权

US5482905A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5482905A
公开(公告)日：1996-01-09
申请号：US178642
申请日：1994-01-05
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1.000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

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