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91. 发明授权

US08455482B2 Substituted pyrrolidine derivative 失效
标题翻译：取代的吡咯烷衍生物
公开(公告)号：US08455482B2
公开(公告)日：2013-06-04
申请号：US13045567
申请日：2011-03-11
申请人： Hisashi Takahashi , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
发明人： Hisashi Takahashi , Junichi Kuroyanagi , Rie Miyauchi , Masatoshi Nagamochi , Makoto Takemura , Isao Hayakawa
IPC分类号： A61K31/535
CPC分类号： C07D401/04 , C07D498/06
摘要： A quinolone antibacterial compound, or a salt or hydrate of the compound, for the treatment of infectious diseases, which exhibit potent antibacterial activity and higher selective toxicity against Gram-positive and Gram-negative bacteria, which do not cause side effects (e.g., convulsion), which exhibit higher safety, and which has a structure of formula (I):
摘要翻译：用于治疗感染性疾病的喹诺酮类抗菌化合物或化合物的盐或水合物，其对革兰氏阳性和革兰氏阴性菌具有强力的抗菌活性和较高的选择性毒性，其不引起副作用（例如惊厥），其具有更高的安全性，并且具有式（I）的结构：

92. 发明授权

US08298437B2 Alkali etching liquid for silicon wafer and etching method using same 有权
标题翻译：用于硅晶片的碱蚀刻液和使用其的蚀刻方法
公开(公告)号：US08298437B2
公开(公告)日：2012-10-30
申请号：US12575728
申请日：2009-10-08
申请人： Takahisa Nakashima , Makoto Takemura , Yasuyuki Hashimoto
发明人： Takahisa Nakashima , Makoto Takemura , Yasuyuki Hashimoto
IPC分类号： C09K13/00
CPC分类号： H01L21/30608 , C09K13/02 , H01L21/02019
摘要： An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1 Ω·cm using the etching liquid.
摘要翻译：一种含有氢氧化钾水溶液的硅晶片用碱蚀刻液和0.1g / L〜0.5g / L的二亚乙基三胺五乙酸。此外，氢氧化钾水溶液的Fe浓度不超过50ppb。一种蚀刻方法，包括使用蚀刻液蚀刻具有不大于1Ω·cm·cm的电阻率的硅晶片的步骤。

93. 发明申请

US20110135374A1 RECORDING APPARATUS 审中-公开
标题翻译：录音设备
公开(公告)号：US20110135374A1
公开(公告)日：2011-06-09
申请号：US12949141
申请日：2010-11-18
申请人： Toshihide Wada , Hiroyuki Saito , Shinya Asano , Hiroyuki Kinoshita , Takashi Awai , Makoto Takemura
发明人： Toshihide Wada , Hiroyuki Saito , Shinya Asano , Hiroyuki Kinoshita , Takashi Awai , Makoto Takemura
IPC分类号： B41J11/00
CPC分类号： B41J13/106
摘要： A recording apparatus having a function of sorting recording sheets is reduced in size and cost. The recording apparatus conveys the recording sheets, records on the recording sheets, discharges the recording sheets, and sorts the discharged recording sheets. The recording apparatus includes: a movable carriage that holds a recording head for recording on the recording sheets; and a sorting mechanism that controls positions of the recording sheets so that the discharged recording sheets are sorted, and the sorting mechanism is configured to be operated by the carriage and sort the recording sheets in accordance with a position of the carriage.
摘要翻译：具有分类记录纸的功能的记录装置的尺寸和成本被降低。记录装置传送记录纸，记录纸上的记录，排出记录纸，并排出排出的记录纸。记录装置包括：可移动托架，其保持用于记录在记录纸上的记录头; 以及分类机构，其控制记录片材的位置，使得排出的记录片材被分类，并且分类机构构造成由托架操作，并根据托架的位置对记录片材进行分类。

94. 发明授权

US07842818B2 Process for preparation of tetrasubstituted 5-azaspiro[2.4]- heptane derivatives and optically active intermediates thereof 失效
标题翻译：制备四取代的5-氮杂螺[2.4] - 庚烷衍生物及其光学活性中间体的方法
公开(公告)号：US07842818B2
公开(公告)日：2010-11-30
申请号：US12067737
申请日：2006-09-28
申请人： Hisashi Takahashi , Rie Miyauchi , Yasuyuki Takeda , Kazuo Kanai , Junichi Kuroyanagi , Satoshi Komoriya , Makoto Takemura
发明人： Hisashi Takahashi , Rie Miyauchi , Yasuyuki Takeda , Kazuo Kanai , Junichi Kuroyanagi , Satoshi Komoriya , Makoto Takemura
IPC分类号： C07D209/54
CPC分类号： C07D209/54 , C07D207/14 , C07D207/273 , C07D207/277 , C07D471/04
摘要： The present invention provides a method for effectively producing an optically active form of tetrasubstituted-5-azaspiro[2.4]heptane derivative, which serves as a useful production intermediate for quinolonecarboxylic acid antibacterial agents, and intermediates for the derivative. The present invention is directed to a method for producing a compound (VII) according to the following scheme.
摘要翻译：本发明提供了有效地制备作为喹诺酮羧酸抗菌剂的有用的生产中间体的四取代-5-氮杂螺[2.4]庚烷衍生物的光学活性形式的方法和该衍生物的中间体。本发明涉及根据下列方案制备化合物（Ⅶ）的方法。

95. 发明授权

US07678200B2 Technique on ozone water for use in cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的臭氧水技术
公开(公告)号：US07678200B2
公开(公告)日：2010-03-16
申请号：US10522717
申请日：2003-08-11
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
IPC分类号： B08B3/00
CPC分类号： C11D7/5022 , B08B3/02 , B08B3/08 , B08B2203/005 , C02F1/68 , C02F1/78 , C02F2103/04 , C02F2103/346 , C11D3/3942 , C11D11/0047 , H01L21/02052
摘要： An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
摘要翻译：一种超纯臭氧水，其包含能够抑制臭氧半衰期降低的有机碳的量的增加; 以及生产超纯臭氧水的方法，其包括将含有上述有机碳的有机溶剂加入到含微量有机碳的超纯臭氧水中。上述超纯臭氧水的臭氧的半衰期延长，因此，当用于清洗半导体衬底时，可以用臭氧含量较高的臭氧水进行清洁，从而表现出增强的清洁能力以及由于臭氧的氧化作用增强而附着在基板上的有机杂质，金属杂质等的清洗效率。

96. 发明授权

US07648576B2 Epitaxial wafer and method for producing same 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US07648576B2
公开(公告)日：2010-01-19
申请号：US10596280
申请日：2004-12-10
申请人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
发明人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
IPC分类号： C30B5/00 , H01L21/311
CPC分类号： H01L21/02052 , H01L21/02008 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/302 , Y10S438/905 , Y10S438/913
摘要： After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent surfaces. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced stacking faults after formation of the epitaxial layer and occurrence of cloud on the back side. Alternatively, the front and back sides of a silicon wafer are cleaned with the liquid SC-1 and liquid SC-2, and then the back side of the silicon wafer is cleaned with an HF solution to be a water-repellent surface while the front side is cleaned with purified water to be a hydrophilic surf ace. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced mounds on the front side and occurrence of cloud on the back side.
摘要翻译：用液体SC-1和液体SC-2清洗硅晶片的正面和背面后，用HF溶液清洗硅晶片的正面和背面以防水表面。之后，在正面形成硅外延层。因此，在形成外延层之后可以减少堆垛层错，并且在背面发生云。或者，用液体SC-1和液体SC-2清洗硅晶片的正面和背面，然后用HF溶液将硅晶片的背面清洗成防水表面，而前面侧面用净化水清洗成亲水冲浪。之后，在正面形成硅外延层。因此，前侧可能有减少的土堆和背面出现云。

97. 发明申请

US20090012119A1 FLUOROALKYLPYRROLIDINE DERIVATIVE 审中-公开
标题翻译：氟代甲基吡咯烷衍生物
公开(公告)号：US20090012119A1
公开(公告)日：2009-01-08
申请号：US11813950
申请日：2006-01-20
申请人： Hisashi Takahasi , Rie Miyauchi , Makoto Takemura
发明人： Hisashi Takahasi , Rie Miyauchi , Makoto Takemura
IPC分类号： A61K31/4709 , C07D401/02 , A61P3/04
CPC分类号： C07D401/04
摘要： This invention relates to a compound represented by the following formula (1):[F.1] its salt or a hydrate thereof. R1 represents hydrogen atom, an optionally substituted alkyl group containing 1 to 6 carbon atoms, a cycloalkyl group containing 3 to 6 carbon atoms, or a substituted carbonyl group derived from an amino acid, a dipeptide, or a tripeptide; R2 represents hydrogen atom, an optionally substituted alkyl group containing 1 to 6 carbon atoms, or a cycloalkyl group containing 3 to 6 carbon atoms; R3 represents an alkyl group containing 1 to 6 carbon atoms or a halogen-substituted alkyl group containing 1 to 6 carbon atoms; R4 represents a cycloalkyl group containing 3 to 6 carbon atoms or a halogen-substituted cycloalkyl group containing 3 to 6 carbon atoms; R5 represents hydrogen atom, phenyl group, acetoxymethyl group, pivaloyloxymethyl group, ethoxycarbonyl group, choline group, dimethylaminoethyl group, 5-indanyl group, phthalidyl group, 5-alkyl-2-oxo-1,3-dioxol-4-ylmethyl group, 3-acetoxy-2-oxobutyl group, or a phenylalkyl group comprising an alkylene group containing 1 to 6 carbon atoms and phenyl group; X1 and X2 independently represent hydrogen atom or a halogen atom; and X represents hydrogen atom or a halogen atom. This compound exhibits broad and strong antibacterial activity to both Gram positive and Gram negative bacteria as well as high safety, and therefore, this compound is useful as a quinolone antibacterial drug, and a prophylactic and/or therapeutic drug for an infectious disease.
摘要翻译：本发明涉及由下式（1）表示的化合物：[F.1]其盐或其水合物。 R1表示氢原子，含有1-6个碳原子的任意取代的烷基，含有3-6个碳原子的环烷基或衍生自氨基酸，二肽或三肽的取代的羰基; R2表示氢原子，可以具有取代基的碳原子数为1〜6的烷基或碳原子数为3〜6的环烷基。 R3表示含有1至6个碳原子的烷基或含有1至6个碳原子的卤素取代的烷基; R 4表示碳原子数3〜6的环烷基或碳原子数3〜6的卤素取代环烷基。 R5表示氢原子，苯基，乙酰氧基甲基，新戊酰氧基甲基，乙氧基羰基，胆碱基，二甲基氨基乙基，5-二氢化茚基，苯酞基，5-烷基-2-氧代-1,3-二氧杂环戊烯-4-基甲基， 3-乙酰氧基-2-氧代丁基或含有1〜6个碳原子的亚烷基的苯基烷基和苯基; X1和X2独立地表示氢原子或卤原子; X表示氢原子或卤原子。该化合物对革兰氏阳性和革兰氏阴性细菌具有广泛和强的抗菌活性以及高安全性，因此该化合物可用作喹诺酮抗菌药物，以及用于感染性疾病的预防和/或治疗药物。

98. 发明申请

US20070093072A1 Epitaxial wafer and method for producing same 有权
标题翻译：外延晶片及其制造方法
公开(公告)号：US20070093072A1
公开(公告)日：2007-04-26
申请号：US10596280
申请日：2004-12-10
申请人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
发明人： Yasuo Fukuda , Makoto Takemura , Koichi Okuda
IPC分类号： C23G1/00 , H01L21/31
CPC分类号： H01L21/02052 , H01L21/02008 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/302 , Y10S438/905 , Y10S438/913
摘要： After cleaning the front and back sides of a silicon wafer with a liquid SC-1 and liquid SC-2, the front and back sides of the silicon wafer are cleaned with an HF solution to be water-repellent surfaces. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced stacking faults after formation of the epitaxial layer and occurrence of cloud on the back side. Alternatively, the front and back sides of a silicon wafer are cleaned with the liquid SC-1 and liquid SC-2, and then the back side of the silicon wafer is cleaned with an HF solution to be a water-repellent surface while the front side is cleaned with purified water to be a hydrophilic surf ace. Following that, an epitaxial layer of silicon is formed on the front side. Consequently, there can be reduced mounds on the front side and occurrence of cloud on the back side.
摘要翻译：用液体SC-1和液体SC-2清洗硅晶片的正面和背面后，用HF溶液清洗硅晶片的正面和背面以防水表面。之后，在正面形成硅外延层。因此，在形成外延层之后可以减少堆垛层错，并且在背面发生云。或者，用液体SC-1和液体SC-2清洗硅晶片的正面和背面，然后用HF溶液将硅晶片的背面清洗成防水表面，而前面侧面用净化水清洗成亲水冲浪。之后，在正面形成硅外延层。因此，前侧可能有减少的土堆和背面出现云。

99. 发明申请

US20060154837A1 Technique on ozone water for use in cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体衬底的臭氧水技术
公开(公告)号：US20060154837A1
公开(公告)日：2006-07-13
申请号：US10522717
申请日：2003-08-11
申请人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
发明人： Makoto Takemura , Yasuo Fukuda , Kazuaki Souda , Masaaki Kato , Eiji Suhara
IPC分类号： C23G1/00 , C11D7/32
CPC分类号： C11D7/5022 , B08B3/02 , B08B3/08 , B08B2203/005 , C02F1/68 , C02F1/78 , C02F2103/04 , C02F2103/346 , C11D3/3942 , C11D11/0047 , H01L21/02052
摘要： An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.
摘要翻译：一种超纯臭氧水，其包含能够抑制臭氧半衰期降低的有机碳的量的增加; 以及生产超纯臭氧水的方法，其包括将含有上述有机碳的有机溶剂加入到含微量有机碳的超纯臭氧水中。上述超纯臭氧水的臭氧的半衰期延长，因此，当用于清洗半导体衬底时，可以用臭氧含量较高的臭氧水进行清洁，从而表现出增强的清洁能力以及由于臭氧的氧化作用增强而附着在基板上的有机杂质，金属杂质等的清洗效率。

100. 发明申请

US20060124590A1 Alkali etching liquid for silicon wafer and etching method using same 有权
公开(公告)号：US20060124590A1
公开(公告)日：2006-06-15
申请号：US11296254
申请日：2005-12-08
申请人： Takahisa Nakashima , Makoto Takemura , Yasuyuki Hashimoto
发明人： Takahisa Nakashima , Makoto Takemura , Yasuyuki Hashimoto
IPC分类号： C09K13/00 , C03C15/00 , B44C1/22 , C25F3/00
CPC分类号： H01L21/30608 , C09K13/02 , H01L21/02019
摘要： An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1Ω·cm using the etching liquid.

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