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91. 发明授权

US08884506B2 Light emitting device capable of preventing breakage during high drive voltage and light emitting device package including the same 有权
标题翻译：能够防止高驱动电压下的断线的发光装置和包含该发光装置的发光装置封装
公开(公告)号：US08884506B2
公开(公告)日：2014-11-11
申请号：US13402619
申请日：2012-02-22
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： F21V21/00 , H01L33/60 , H01L27/15 , H01L33/62
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A light emitting device includes a light emitting structure divided into a plurality of light emitting cells and a boundary region, the light emitting cells including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells; first conductive layers disposed under the light emitting cells; at least one second conductive layer disposed under the first conductive layers; a first insulation layer disposed between each of the first conductive layers, and between the first conductive layers and the at least one second conductive layer; and a connecting electrode connecting the first electrode on one light emitting cell with the at least one second conductive layer under another light emitting cell. The at least one second conductive layer is connected with one of the first conductive layers through the first insulation layer.
摘要翻译：发光器件包括分为多个发光单元和边界区域的发光结构，所述发光单元分别包括第一导电型半导体层，有源层和第二导电型半导体层; 设置在每个所述发光单元上的第一电极; 设置在发光单元下方的第一导电层; 设置在所述第一导电层下方的至少一个第二导电层; 设置在每个第一导电层之间以及在第一导电层和至少一个第二导电层之间的第一绝缘层; 以及将一个发光单元上的第一电极与另一个发光单元下的至少一个第二导电层连接的连接电极。所述至少一个第二导电层通过所述第一绝缘层与所述第一导电层之一连接。

92. 发明授权

US08835972B2 Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system 有权
标题翻译：发光器件，制造发光器件的方法，发光器件封装和照明系统
公开(公告)号：US08835972B2
公开(公告)日：2014-09-16
申请号：US14070740
申请日：2013-11-04
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/22
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/22 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer.
摘要翻译：提供了一种发光装置。发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构层，第一电极电连接到第一导电类型半导体层，发光结构层下面的绝缘支撑构件，以及在发光结构层和绝缘支撑构件之间的多个导电层。多个导电层中的至少一个具有比发光结构层的宽度大的宽度，并且包括从发光结构层的侧壁进一步向外设置的接触部。

93. 发明授权

US08686456B2 Light emitting device, light emitting device package, and light unit 有权
标题翻译：发光装置，发光装置封装和灯单元
公开(公告)号：US08686456B2
公开(公告)日：2014-04-01
申请号：US13217526
申请日：2011-08-25
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/385 , H01L2224/48091 , H01L2224/48247 , H01L2924/12032 , H01L2933/0091 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a light unit. The light emitting device includes a support substrate, a light emitting structure layer disposed on the support substrate, the light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode electrically connected to the first conductive type semiconductor layer, and a volume layer disposed on the light emitting structure layer, the volume layer having a thickness greater than a thickness of the electrode.
摘要翻译：提供了一种发光器件，发光器件封装和光单元。发光器件包括支撑衬底，设置在支撑衬底上的发光结构层，发光结构层包括第一导电类型半导体层，第二导电类型半导体层和设置在第一导电类型之间的有源层半导体层和第二导电类型半导体层，电连接到第一导电类型半导体层的电极和设置在发光结构层上的体积层，该体积层的厚度大于电极的厚度。

94. 发明授权

US08680555B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08680555B2
公开(公告)日：2014-03-25
申请号：US13350260
申请日：2012-01-13
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/48 , H01L33/642 , H01L2933/0016
摘要： Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括发光结构，其包括多个化合物半导体层，发光结构外侧的钝化层，发光结构上的第一电极层和发光结构下的第二电极层。

95. 发明授权

US08525209B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525209B2
公开(公告)日：2013-09-03
申请号：US13362231
申请日：2012-01-31
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second electrode; an electrostatic protection unit including a plurality of compound semiconductor layer under the first insulating layer; a first electrode layer electrically connecting the light emitting unit to the electrostatic protection unit; and a wiring layer electrically connecting the electrostatic protection unit to the second electrode layer.
摘要翻译：一种半导体发光器件，包括第二电极层; 发光单元，包括在所述第二电极层的一部分下方的多个化合物半导体层; 在所述第二电极的另一部分下方的第一绝缘层; 静电保护单元，包括在第一绝缘层下面的多个化合物半导体层; 将所述发光单元电连接到所述静电保护单元的第一电极层; 以及将静电保护单元电连接到第二电极层的布线层。

96. 发明授权

US08476671B2 Light emitting device, light emitting device package, and lighting device 有权
标题翻译：发光装置，发光装置封装和照明装置
公开(公告)号：US08476671B2
公开(公告)日：2013-07-02
申请号：US13080796
申请日：2011-04-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/40 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting device includes a support member, a light emitting structure on the support member, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the second conductive type semiconductor layer and the first conductive type semiconductor layer, a first nitride semiconductor layer disposed on the second conductive type semiconductor layer, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and including an uneven structure, and a first electrode pad disposed on the light emitting structure wherein the second nitride semiconductor layer has an opening, the first electrode pad is in contact with the first nitride semiconductor layer through the opening, and the first nitride semiconductor layer has a work function smaller than that of the second nitride semiconductor layer.
摘要翻译：发光装置包括支撑构件，支撑构件上的发光结构，发光结构包括第一导电类型半导体层，第二导电类型半导体层和在第二导电类型半导体层和第二导电类型半导体层之间的有源层第一导电型半导体层，设置在第二导电类型半导体层上的第一氮化物半导体层，设置在第一氮化物半导体层上并包括不平坦结构的第二氮化物半导体层，以及设置在发光结构上的第一电极焊盘，所述第二氮化物半导体层具有开口，所述第一电极焊盘通过所述开口与所述第一氮化物半导体层接触，所述第一氮化物半导体层的功函数小于所述第二氮化物半导体层的功函数。

97. 发明授权

US08471286B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08471286B2
公开(公告)日：2013-06-25
申请号：US13177406
申请日：2011-07-06
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/44 , H01L2933/0016
摘要： According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, an electrode layer disposed under the light emitting structure, an electrode disposed on the light emitting structure, a conductive support member disposed under the electrode layer, a conductive layer disposed between the light emitting structure and the conductive support member, and an insulating layer disposed between the conductive support member and the light emitting structure, wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure, and wherein the conductive layer includes a different material from the electrode layer.
摘要翻译：根据本发明的一个实施例，一种半导体发光器件包括：包括多个化合物半导体层的发光结构，设置在发光结构下的电极层，设置在发光结构上的电极;导电支撑构件设置在所述电极层下方的导电层，设置在所述发光结构和所述导电支撑构件之间的导电层，以及设置在所述导电支撑构件和所述发光结构之间的绝缘层，其中所述电极层与所述导电支撑构件的第一区域接触发光结构的下表面和导电层与发光结构的下表面的第二区域接触，并且其中导电层包括与电极层不同的材料。

98. 发明授权

US08269250B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08269250B2
公开(公告)日：2012-09-18
申请号：US12705130
申请日：2010-02-12
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/36 , H01L33/44
CPC分类号： H01L33/44 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括发光结构，其包括多个化合物半导体层，发光结构下方的第二电极层，发光结构与第二电极层的边缘区之间的沟道层，缓冲层沟道层和缓冲层上的钝化层。

99. 发明授权

US08188506B2 Semiconductor light emitting device 有权
公开(公告)号：US08188506B2
公开(公告)日：2012-05-29
申请号：US12571095
申请日：2009-09-30
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L29/72
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/46
摘要： A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer.

100. 发明授权

US08022428B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08022428B2
公开(公告)日：2011-09-20
申请号：US13014530
申请日：2011-01-26
申请人： Hwan Hee Jeong
发明人： Hwan Hee Jeong
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/42 , H01L33/44
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括第一导电半导体层，第一导电半导体层下面的有源层，有源层下的第二导电半导体层，第二导电半导体层下面的第二电极层，至少透射导电层一部分在第二导电半导体层和第二电极层之间。

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