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91. 发明授权

US06245836B1 Lubricating coating compound, sliding structure combining two sliding members in which lubricating coating compound is applied to one of the sliding members, and slide bearing apparatus using the same 有权
公开(公告)号：US06245836B1
公开(公告)日：2001-06-12
申请号：US09262349
申请日：1999-03-04
申请人： Takashi Nakamaru , Yoshiaki Yamamoto , Namiko Kaneko
发明人： Takashi Nakamaru , Yoshiaki Yamamoto , Namiko Kaneko
IPC分类号： C08J300
CPC分类号： F16C33/201 , C08G59/3254 , C08G59/66 , C08K5/378 , C09D163/00 , C10M107/50 , C10M2201/041 , C10M2201/042 , C10M2209/101 , C10M2211/06 , C10M2213/02 , C10M2213/062 , C10M2217/042 , C10M2217/043 , C10M2219/09 , C10M2221/00 , C10M2229/02 , C10M2229/025 , C10M2229/0405 , C10M2229/041 , C10M2229/0415 , C10M2229/0425 , C10M2229/0435 , C10M2229/0445 , C10M2229/045 , C10M2229/0455 , C10M2229/046 , C10M2229/0465 , C10M2229/047 , C10M2229/0475 , C10M2229/048 , C10M2229/0485 , C10M2229/05 , C10M2229/0505 , C10M2229/051 , C10M2229/0515 , C10M2229/0525 , C10M2229/0535 , C10M2229/0545 , C10N2220/02 , C10N2240/00 , C10N2240/02 , C10N2240/22 , C10N2240/30 , C10N2240/50 , C10N2240/52 , C10N2240/54 , C10N2240/56 , C10N2240/58 , C10N2240/60 , C10N2240/66 , C10N2250/10 , C10N2250/121 , C10N2270/00 , C08L63/00
摘要： A lubricating coating compound used for forming a thermosetting synthetic resin lubricating film, wherein a resin composition composed of an epoxy resin, a curing agent, a reactive silicone oil with an epoxy group, and a triazinethiol is dissolved in an organic solvent, wherein if the sum of the epoxy resin and the curing agent is set to 100 parts by weight, the sum of the reactive silicone oil with an epoxy group and the triazinethiol is 2 to 30 parts by weight.

92. 发明授权

US06180043B2 Method of in-mold coating 有权
标题翻译：模内涂层方法
公开(公告)号：US06180043B2
公开(公告)日：2001-01-30
申请号：US09235766
申请日：1999-01-25
申请人： Kenji Yonemochi , Yoshiaki Yamamoto
发明人： Kenji Yonemochi , Yoshiaki Yamamoto
IPC分类号： B29C4514
CPC分类号： B29C45/1679 , B29B7/76 , B29C37/0028 , B29C45/561
摘要： A method of in-mold coating, comprising steps of forming a molded product by applying a clamping pressure to a mold to mold a synthetic resin molding material in the mold according to an injection molding method, an injection compression molding method or an injection press molding method, then coating a surface of the molded product with a coating material in the mold, wherein the coating material is injected in such a state that the molded product has cured or solidified to such an extent that the surface of the molded product can withstand an injection pressure and a flow pressure of the coating material, and the clamping of the mold after injection of the coating material is carried out under certain multistagewise variable clamping pressures with certain clamping pressure transitional periods of time.
摘要翻译：一种模内涂布方法，包括以下步骤：通过向模具施加夹紧压力来形成模制产品，以根据注射成型方法，注射压缩模塑法或注射成型法模制合成树脂模制材料方法，然后在模具中用涂料涂覆模制产品的表面，其中涂覆材料以这样的状态注入，即模制产品已经固化或固化到使模制产品的表面能承受的程度注射压力和涂层材料的流动压力，并且在注射涂料之后的模具的夹紧在某些多级可变夹紧压力下以一定的夹紧压力过渡时间段进行。

93. 发明授权

US6133122A Method of fabricating semiconductor device for preventing rising-up of siliside 失效
标题翻译：制造防止硅化物上升的半导体器件的方法
公开(公告)号：US6133122A
公开(公告)日：2000-10-17
申请号：US89666
申请日：1998-06-03
申请人： Yoshiaki Yamamoto
发明人： Yoshiaki Yamamoto
IPC分类号： H01L21/28 , H01L21/265 , H01L21/324 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L21/425
CPC分类号： H01L29/665 , H01L21/2652 , H01L21/324
摘要： Disclosed is a manufacturing method of a semiconductor device which comprises which comprises an element isolation region formation step; a side wall formation step; a diffusion layer formation step; an activation step; a silicide formation step; and a removing step. The element isolation region formation step is the one for forming a field oxide film on a semiconductor substrate to form an element isolation region. In order to form a diffusion layer by introducing impurities into the semiconductor substrate, after injecting the fluorides (ion injection species) of elements into the semiconductor substrate, a thermal treatment is performed at a lower temperature than that of a thermal treatment for activating the diffusion layer prior to the activation of the diffusion layer, and fluorine produced from the ion injection species is discharged to the outside.
摘要翻译：公开了一种半导体器件的制造方法，包括：元件隔离区域形成步骤; 侧壁形成步骤; 扩散层形成步骤; 激活步骤; 硅化物形成步骤; 和去除步骤。元件隔离区域形成步骤是用于在半导体衬底上形成场氧化膜以形成元件隔离区域的步骤。为了通过将杂质引入到半导体衬底中形成扩散层，在将元件的氟化物（离子注入物质）注入半导体衬底之后，在比用于激活扩散的热处理的温度低的温度下进行热处理在激活扩散层之前的层，并且从离子注入物质产生的氟被排出到外部。

94. 发明授权

US6124190A Method of manufacturing semiconductor device with silicide layer without short circuit 失效
标题翻译：具有无短路的硅化物层的半导体器件的制造方法
公开(公告)号：US6124190A
公开(公告)日：2000-09-26
申请号：US988991
申请日：1997-12-11
申请人： Yoshiaki Yamamoto , Kazuo Aizawa
发明人： Yoshiaki Yamamoto , Kazuo Aizawa
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/78 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： In a method of manufacturing a semiconductor integrated circuit, a gate structure with sidewall insulating films and a field oxidation film are formed on a semiconductor substrate. Then, diffusion layers are formed for the gate structure with the sidewall insulating films. Subsequently, a surface layer is removed from each of the sidewall insulating films and the field oxidation film. Next, a silicide layer is formed in a surface layer of each of the diffusion layers in self-alignment with the gate structure with the sidewall insulating films and the field oxidation film.
摘要翻译：在制造半导体集成电路的方法中，在半导体衬底上形成具有侧壁绝缘膜和场氧化膜的栅极结构。然后，对于具有侧壁绝缘膜的栅极结构形成扩散层。随后，从每个侧壁绝缘膜和场氧化膜去除表面层。接下来，在与各侧壁绝缘膜和场氧化膜的栅极结构自对准的每个扩散层的表面层中形成硅化物层。

95. 发明授权

US5448891A Dehumidifier 失效
标题翻译：除湿机
公开(公告)号：US5448891A
公开(公告)日：1995-09-12
申请号：US201262
申请日：1994-02-24
申请人： Yasushi Nakagiri , Yoshiaki Yamamoto , Hisaaki Gyoten , Shoko Nakasuji
发明人： Yasushi Nakagiri , Yoshiaki Yamamoto , Hisaaki Gyoten , Shoko Nakasuji
IPC分类号： B01D53/26 , F24F1/00 , F24F5/00 , H01L37/04 , F25B21/02
CPC分类号： F25B21/02 , F24F5/0042 , H01L37/00
摘要： A dehumidifier of the present invention includes: a first frame; a second frame formed inside of the first frame, having a first opening and a second opening; and a unit for allowing air to flow from the first opening to the second opening, wherein the second frame has a hollow substrate, a thermoelectric element formed on a surface of the hollow substrate directly, a pair of electrodes, connected to the thermoelectric element, for supplying an electric current to the thermoelectric element, and the thermoelectric element causes a temperature difference between the outer surface and the inner surface of the second frame.
摘要翻译：本发明的除湿机包括：第一框架; 形成在第一框架内部的第二框架，具有第一开口和第二开口; 以及用于允许空气从第一开口流到第二开口的单元，其中第二框架具有中空基板，直接形成在中空基板的表面上的热电元件，连接到热电元件的一对电极，用于向所述热电元件供给电流，并且所述热电元件引起所述第二框架的外表面和内表面之间的温度差。

96. 发明授权

US08822255B2 Method of manufacturing a solar cell module and apparatus of manufacturing a solar cell module 有权
标题翻译：制造太阳能电池模块的方法和制造太阳能电池组件的装置
公开(公告)号：US08822255B2
公开(公告)日：2014-09-02
申请号：US13393654
申请日：2010-08-30
申请人： Yoshiaki Yamamoto , Hitoshi Ikeda , Tomoki Ohnishi , Kouichi Tamagawa
发明人： Yoshiaki Yamamoto , Hitoshi Ikeda , Tomoki Ohnishi , Kouichi Tamagawa
IPC分类号： H01L31/18
CPC分类号： B23K26/36 , B23K26/40 , B23K2103/172 , H01L31/046 , H01L31/0463 , H01L31/18 , Y02E10/50
摘要： A method of manufacturing a solar cell, which includes an edge deletion step using a laser beam, and a manufacturing apparatus which is used in such a method, the method and the apparatus being capable of preventing a shunt and cracks from being generated are provided. By radiating a first laser beam to a multilayer body, which includes a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer sequentially formed on a transparent substrate, from a side of the transparent substrate, the photoelectric conversion layer and the back electrode layer in a first region are removed, and by radiating a second laser beam into the region such that the second laser beam is spaced from a peripheral rim of the region, the transparent electrode layer in a second region is removed.
摘要翻译：提供一种制造太阳能电池的方法，其包括使用激光束的边缘删除步骤以及在这种方法中使用的制造装置，能够防止分流和裂纹产生的方法和装置。通过将第一激光束照射到多层体，其包括从透明基板侧，光电转换层和背面的透明基板上依次形成的透明电极层，光电转换层和背面电极层去除第一区域中的电极层，并且通过将第二激光束照射到该区域中，使得第二激光束与该区域的外围边缘间隔开，从而去除第二区域中的透明电极层。

97. 发明授权

US08202825B2 Solid lubricant and sliding member 有权
标题翻译：固体润滑剂和滑动构件
公开(公告)号：US08202825B2
公开(公告)日：2012-06-19
申请号：US12439858
申请日：2007-09-04
申请人： Yoshiaki Yamamoto
发明人： Yoshiaki Yamamoto
IPC分类号： C10M111/00 , C10M169/00
CPC分类号： C10M169/04 , C10M133/42 , C10M2201/053 , C10M2201/085 , C10M2205/022 , C10M2205/0225 , C10M2205/14 , C10M2205/16 , C10M2205/163 , C10M2207/125 , C10M2207/281 , C10M2209/084 , C10M2213/02 , C10M2213/062 , C10M2215/04 , C10M2215/08 , C10M2215/2203 , C10M2217/041 , C10M2217/0415 , C10M2217/042 , C10M2217/044 , C10M2217/0443 , C10M2217/045 , C10M2223/04 , C10N2210/01 , C10N2230/06 , C10N2240/02 , C10N2250/08 , C10N2250/14 , C10N2250/18 , F16C33/201 , F16C33/24 , C10N2210/04
摘要： There are provided a solid lubricant having an island-and-sea structure, which, with the sea phase strengthened, remains free of troubles such as chipping even in use under high load conditions, and a sliding member having the solid lubricant embedded therein. The solid lubricant comprises 1 to 10% by volume of a polyethylene resin, 20 to 60% by volume of a hydrocarbon-based wax, 10 to 60% by volume of melamine cyanurate, 5 to 15% by volume of a polyamide resin, and 2 to 10% by volume of a modified polyethylene resin. The sliding member has the solid lubricant embedded in pores or grooves formed in a sliding surface of the sliding member body.
摘要翻译：提供了一种具有岛海结构的固体润滑剂，即使在高负载条件下使用时，海相强化也保持无切屑等问题，并且内嵌有固体润滑剂的滑动部件。固体润滑剂包含1至10体积％的聚乙烯树脂，20至60体积％的烃类蜡，10至60体积％的三聚氰胺氰尿酸酯，5至15体积％的聚酰胺树脂，和 2〜10体积％的改性聚乙烯树脂。滑动构件具有嵌入在滑动构件主体的滑动表面中形成的孔或槽中的固体润滑剂。

98. 发明授权

US07560749B2 Light emitting material, light emitting device, and electronic device 失效
标题翻译：发光材料，发光装置和电子装置
公开(公告)号：US07560749B2
公开(公告)日：2009-07-14
申请号：US11625114
申请日：2007-01-19
申请人： Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama
发明人： Junichiro Sakata , Takahiro Kawakami , Yoshiaki Yamamoto , Miki Katayama , Kohei Yokoyama
IPC分类号： H01J1/62
CPC分类号： C09K11/565 , C09K11/54 , C09K11/567 , C09K11/621 , C09K11/7701 , C09K11/883 , H05B33/14
摘要： An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译：目的是提供一种新颖的发光材料。另一个目的是提供一种降低功耗的发光器件和电子器件。另一个目的是提供一种可以以低成本制造的发光器件和电子器件。提供了包括基材，第一杂质元素，第二杂质元素和第三杂质元素的发光元件。基体材料是ZnS，CdS，CaS，Y2S3，Ga2S3，SrS，BaS，ZnO，Y2O3，AlN，GaN，InN，ZnSe，ZnTe和SrGa2S4中的一种; 第一杂质元素是Cu，Ag，Au，Pt和Si中的任一种; 第二杂质元素是F，Cl，Br，I，B，Al，Ga，In和Tl中的任一种; 并且第三杂质元素是Li，Na，K，Rb，Cs，N，P，As，Sb和Bi中的任一种。

99. 发明授权

US07462514B2 Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television 有权
标题翻译：半导体装置及其制造方法，液晶电视和EL电视
公开(公告)号：US07462514B2
公开(公告)日：2008-12-09
申请号：US11060702
申请日：2005-02-18
申请人： Hiroko Shiroguchi , Yoshiaki Yamamoto
发明人： Hiroko Shiroguchi , Yoshiaki Yamamoto
IPC分类号： H01L21/44
CPC分类号： H01L27/1292 , H01L51/524 , H01L51/5246 , H01L51/5281
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，该半导体器件具有能够以微小结构降低成本并提高生产量的半导体元件，此外，还提供了一种制造液晶电视和EL电视的方法。根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底上形成光吸收层，通过使用溶液在光吸收层上形成第一区域，通过照射光吸收产生热量并且通过用热量加热第一区域来形成第一膜图案。

100. 发明申请

US20070275554A1 Semiconductor device with interconnection structure for reducing stress migration 有权
标题翻译：具有用于减少应力迁移的互连结构的半导体器件
公开(公告)号：US20070275554A1
公开(公告)日：2007-11-29
申请号：US11703701
申请日：2007-02-08
申请人： Masaya Kawano , Yoshiaki Yamamoto , Takamasa Ito
发明人： Masaya Kawano , Yoshiaki Yamamoto , Takamasa Ito
IPC分类号： H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76804 , H01L21/76808 , H01L21/76877 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device of the present invention includes a first interconnection, a via-plug that is connected to the first interconnection, and a second interconnection that is formed as a single unit with the via-plug. The cross-sectional shape of the via-plug is such that the plug sidewall angle, which indicates the angle of the via-plug sidewall with respect to the surface of the first interconnection, is a positive angle; and moreover, at least two points exist between the base and the top of the via-plug on at least one sidewall of the two sidewalls of the cross-sectional shape of the via-plug at which the plug sidewall angle attains a maximum value. Since shapes that would give rise to the occurrence of concentrations of stress are not formed in the via-plug sidewalls, metal is more effectively embedded in the via-hole, and the incidence of voids is prevented.
摘要翻译：本发明的半导体器件包括第一互连，连接到第一互连的通孔，以及与通孔连接形成为单个单元的第二互连。通孔塞的横截面形状使得指示通孔塞侧壁相对于第一互连件的表面的角度的插塞侧壁角度为正角度; 此外，在插塞侧壁角达到最大值的过孔塞的横截面形状的两个侧壁的至少一个侧壁上，在通孔塞的基部和顶部之间至少存在两个点。由于在通孔塞侧壁中不会形成会产生应力集中的形状，所以金属更有效地嵌入到通路孔中，能够防止空隙的发生。

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