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    • 91. 发明授权
    • Electronic apparatus, image forming system, video printing system and camera-incorporated recording/reproducing apparatus
    • 电子设备,图像形成系统,视频打印系统和摄像机内置的记录/再现设备
    • US07443530B2
    • 2008-10-28
    • US10929536
    • 2004-08-31
    • Kenji Kawai
    • Kenji Kawai
    • G06F15/00
    • G06F3/121G06F3/1212G06F3/1235G06F3/1259G06F3/128G06F3/1284Y02D10/1592
    • The object of the present invention is, while employing only a simple structure, to engage in rapid communication with an external device and to display results of the communication. According to the present invention, disclosed is an electronic apparatus, which comprises conversion means for converting a target image into image signals, supply means for supplying, to a monitor, signals in consonance with the image signal obtained by the conversion means in order to reproduce the target image, communication means for using a DS-Link method to perform bidirectional communication with an external device handling the image signal for the target image and control means for displaying on the monitor information concerning the external device that is obtained by the communication means.
    • 本发明的目的在于仅采用简单的结构,与外部设备进行快速通信并显示通信结果。 根据本发明,公开了一种电子设备,其包括用于将目标图像转换为图像信号的转换装置,供应装置,用于向监视器提供符合由转换装置获得的图像信号的信号,以便再现 目标图像,用于使用DS-Link方法与处理目标图像的图像信号的外部设备进行双向通信的通信装置和用于在监视器上显示由通信装置获得的关于外部设备的信息的控制装置。
    • 99. 发明授权
    • Method and apparatus for etching silicon nitride film and manufacturing method of semiconductor device
    • 用于蚀刻氮化硅膜的方法和装置及半导体器件的制造方法
    • US06686294B2
    • 2004-02-03
    • US09816403
    • 2001-03-26
    • Kenji Kawai
    • Kenji Kawai
    • H01L21302
    • H01L21/31116H01L21/31612H01L21/3185
    • An etching method used to selectively etch a silicon nitride film is achieved that enables the selective ratio of the silicon nitride film relative to a silicon oxide film to be sufficiently high. The etching method uses a reactive ion etching apparatus including a process chamber holding herein a substrate to be etched, gas supply means for supplying a reactant gas into the process chamber, and an upper electrode and a lower electrode provided within the process chamber and applied with high-frequency currents. The etching is performed under the conditions that the reactant gas includes halogen-based gas, the pressure of the reactant gas in the chamber is 12.0 Pa-66.7 Pa, the flow rate of the reactant gas supplied into the chamber is 0.1 liter/min-0.55 liter/min, and the distance between the upper and lower electrodes is 50 mm-120 mm.
    • 实现了用于选择性地蚀刻氮化硅膜的蚀刻方法,其使氮化硅膜相对于氧化硅膜的选择比足够高。 蚀刻方法使用反应离子蚀刻装置,其包括在此保持要蚀刻的基板的处理室,用于将反应气体供给到处理室中的气体供给装置,以及设置在处理室内的上部电极和下部电极, 高频电流。 在反应气体包括卤素系气体,室内的反应气体的压力为12.0Pa〜66.7Pa的条件下进行蚀刻,供给到室内的反应气体的流量为0.1升/ 0.55升/分钟,上下电极之间的距离为50mm〜120mm。