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91. 发明授权

US07183715B2 Method for operating a semiconductor processing apparatus 失效
标题翻译：操作半导体处理装置的方法
公开(公告)号：US07183715B2
公开(公告)日：2007-02-27
申请号：US10997888
申请日：2004-11-29
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J7/24
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
摘要翻译：一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

92. 发明授权

US07138606B2 Wafer processing method 失效
标题翻译：晶圆加工方法
公开(公告)号：US07138606B2
公开(公告)日：2006-11-21
申请号：US10658281
申请日：2003-09-10
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B5/14
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.
摘要翻译：一种与具有内置冷却剂液体循环路径的液体冷却套和安装在液体冷却套上的陶瓷板的晶片处理装置一起使用的晶片处理方法，其中具有加热器和用于静电卡盘的电极。该方法能够通过晶片输送将晶片安装在陶瓷板上，从而实现晶片处理。该方法包括使晶片输送将晶片输送到陶瓷板上，在将晶片保持在陶瓷板上预定时间长度的同时预热晶片，并将预热的晶片安装在陶瓷板上。

93. 发明申请

US20060175016A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060175016A1
公开(公告)日：2006-08-10
申请号：US11066223
申请日：2005-02-28
申请人： Manabu Edamura , Ken Yoshioka , Takeshi Shimada
发明人： Manabu Edamura , Ken Yoshioka , Takeshi Shimada
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/321
摘要： A plasma processing apparatus capable of generating a stable and uniform-density plasma includes a processing chamber whose one surface is formed by a flat-plate-like insulating-material manufactured window, a sample mounting stage in which a sample mounting plane is formed on a surface opposed to the insulating-material manufactured window of the processing chamber, a gas-inlet for introducing a processing gas into the processing chamber, a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, and an inductively coupled antenna formed outside the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined longitudinally, the direction being perpendicular to the sample mounting plane.
摘要翻译：能够产生稳定且均匀密度的等离子体的等离子体处理装置包括：处理室，其一个表面由平板状的绝缘材料制造的窗口形成;样品安装台，其中样品安装平面形成在与处理室的绝缘材料制造窗口相对的表面，用于将处理气体引入处理室的气体入口，形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线，具有设置在径向图案中的狭缝，以及形成在绝缘材料制造窗口外部的电感耦合天线，并且经由窗口执行与等离子体的电感耦合，等离子体形成在处理室内。电感耦合天线由线圈构成，该线圈沿着纵向限定的方向缠绕多次，该方向垂直于样品安装平面。

94. 发明授权

US07049243B2 Surface processing method of a specimen and surface processing apparatus of the specimen 有权
标题翻译：试样的表面处理方法和试样的表面处理装置
公开(公告)号：US07049243B2
公开(公告)日：2006-05-23
申请号：US10754594
申请日：2004-01-12
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.
摘要翻译：一种用于蚀刻具有使用电磁波在真空室中产生等离子体的栅极氧化膜的样品的等离子体处理方法，对样品施加rf偏置功率，在样品的充电电压达到击穿之前关断rf偏置功率栅极氧化膜的电压在样品的充电电压基本上下降之后导通rf偏置功率，并重复rf偏置功率的导通和截止以处理样品。关断时间至少比导通时间长，并且通过连续供电以在反复打开和关闭rf偏置功率期间产生等离子体而产生等离子体。

95. 发明授权

US06962472B2 Vacuum processing apparatus and semiconductor manufacturing line using the same 失效
标题翻译：真空处理装置和使用其的半导体制造线
公开(公告)号：US06962472B2
公开(公告)日：2005-11-08
申请号：US09956136
申请日：2001-09-20
申请人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
发明人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
IPC分类号： H01L21/302 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/3065 , H01L21/677
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67778 , Y10S134/902 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10S414/14 , Y10T70/5801 , Y10T70/5805
摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.
摘要翻译：真空处理装置由盒式磁带和真空处理块构成。盒式磁带具有用于安装包含样品和大气传送装置的多个盒的盒式台。真空处理块具有用于对样品进行真空处理的多个处理室和用于转移样品的真空转印装置。磁带盒和真空处理块的平面图都是近似矩形的，并且盒体的宽度被设计成大于真空处理块的宽度，真空处理装置的平面图形成为 L形或T形。

96. 发明申请

US20050087305A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20050087305A1
公开(公告)日：2005-04-28
申请号：US11001059
申请日：2004-12-02
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/507 , H01J37/32 , H01L21/00 , H01L21/306
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.
摘要翻译：等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。由介电材料制成的基座覆盖样品台的外表面和外侧。相对于基座设置金属膜，向金属膜施加RF电压。

97. 发明授权

US06759338B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06759338B2
公开(公告)日：2004-07-06
申请号：US09795487
申请日：2001-03-01
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.
摘要翻译：提供了一种等离子体处理装置和等离子体处理方法，用于处理大直径的晶片以高产率生产高速半导体电路。在与被处理基板相对的电极的表面上形成的绝缘膜的厚度局部变化，在绝缘膜中设置电极，向电极提供旁路偏置电流。在电极的表面上设置有与被处理基板相邻的材料的绝缘膜上的电极，向电极供给旁路偏置电流。

98. 发明授权

US06756737B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06756737B2
公开(公告)日：2004-06-29
申请号：US10143790
申请日：2002-05-14
申请人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
发明人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
IPC分类号： H01J724
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.
摘要翻译：本发明的主要目的是在使用在连接点处串联连接的电感耦合天线和静电电容耦合天线产生的等离子体的晶片处理期间，抑制副产物在真空室的内壁上的沉积。通过可变阻抗负载接地电感耦合天线和静电电容耦合天线的连接点并改变可变阻抗负载的阻抗，可以抑制真空室内壁上的副产物的沉积，从而控制通过静电电容耦合放电在室内产生的等离子体的比例。

99. 发明授权

US06672819B1 Vacuum processing apparatus and semiconductor manufacturing line using the same 有权
公开(公告)号：US06672819B1
公开(公告)日：2004-01-06
申请号：US09704614
申请日：2000-11-03
申请人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
发明人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
IPC分类号： B65G4907
CPC分类号： H01L21/67161 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67778 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

100. 发明授权

US06649021B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
公开(公告)号：US06649021B2
公开(公告)日：2003-11-18
申请号：US09908844
申请日：2001-07-20
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L2100
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

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