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    • 93. 发明申请
    • Spinning device and method for detecting fiber accumulated state
    • 用于检测纤维累积状态的纺纱装置和方法
    • US20060096271A1
    • 2006-05-11
    • US11245088
    • 2005-10-07
    • Atsushi YamamotoTomoaki TakahashiMasaki Oka
    • Atsushi YamamotoTomoaki TakahashiMasaki Oka
    • D01H13/26D02G3/02
    • D01H4/02D01H1/115D01H4/42
    • It is an object of the present invention to provide a spinning device that detects early that fibers F have been accumulated in an air exhausting space 55 to prevent a defect (weak yarn) in a spun yarn. A spinning device in accordance with the present invention includes a pneumatic spinning nozzle 19, a whirling current generating chamber 25 in which fibers are twisted using a whirling air current generated by the pneumatic spinning nozzle, an air exhausting space 55 that is in communication with the whirling current generating chamber 25, a negative pressure source that sucks air from the air exhausting space 55, and a pressure sensor 63 that detects a pressure in the air exhausting space 55. When the pressure detected by the pressure sensor 63 during a spinning operation performed by the pneumatic spinning nozzle 19 rises to at least a predetermined value, the unit controller 32 performs control such that the spinning operation is stopped. The unit controller 32 further lights an alarm lamp 71.
    • 本发明的目的是提供一种早期检测纤维F已经积聚在排气空间55中以防止细纱中的缺陷(细纱)的纺丝装置。 根据本发明的纺纱装置包括气动纺丝喷嘴19,旋转电流产生室25,其中使用由气动纺丝喷嘴产生的旋转气流扭转纤维;排气空间55,其与 旋转电流产生室25,从排气空间55吸入空气的负压源和检测排气空间55的压力的压力传感器63.当在纺纱操作期间由压力传感器63检测到的压力 通过气动纺丝喷嘴19上升至至少预定值,单元控制器32执行使纺丝操作停止的控制。 单元控制器32进一步点亮报警灯71。
    • 94. 发明申请
    • Thermoelectric transportation material containing nitrogen
    • 含氮的热电输送材料
    • US20060037637A1
    • 2006-02-23
    • US10522573
    • 2003-07-25
    • Shigeo YamaguchiYasuo IwamuraAtsushi Yamamoto
    • Shigeo YamaguchiYasuo IwamuraAtsushi Yamamoto
    • H01L35/12
    • H01L35/22
    • A nitrogen-containing thermoelectric material, which has an element composition represented by: AlzGayInxMuRvOsNt  (A) or AlzGayInxMuRvDwNm  (B) (wherein M represents a transition element; R represents a rare earth element; D represents at least one element selected from elements of the Group IV or II; 0≦z≦0.7, 0≦y≦0.7, 0.2≦x≦1.0, 0≦u≦0.7, 0≦v≦0.05, 0.9≦s+t≦1.7, 0.4≦s≦1.2, 0≦w≦0.2, and 0.9≦m≦1.1; and x+y+z=1), and has an absolute value of a Seebeck coefficient of 40 μV/K or more at a temperature of 100° C. or more. These thermoelectric materials comprise elements having low toxicity, are excellent in a heat resistance, a chemical resistance and the like, and have a high thermoelectric transforming efficiency.
    • 一种含氮热电材料,其具有由以下公式表示的元素组成:<?in-line-formula description =“In-line formula”end =“lead”→> Al < 在 (A)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead”?> 在&lt; x&gt;&gt;&lt;&lt; (B)<?in-line-formula description =“In-line formula”end =“tail”?>(其中M表示过渡元素; R表示稀土元素 ; D表示选自IV或II族元素的至少一种元素; 0 <= z <= 0.7,0 <= y <= 0.7,0.2 <= x <= 1.0,0 <= u <= 0.7,0 <= v <= 0.05,0.9 <= s + t <= 1.7,0.4 <= s <= 1.2,0 <= w <= 0.2和0.9 <= m <= 1.1; x + y + z = 1 ),并且在100℃以上的温度下具有40kV / K以上的塞贝克系数的绝对值。 这些热电材料包含低毒性,耐热性,耐化学性等优异的元件,具有高的热电转换效率。
    • 95. 发明授权
    • Method for forming pattern of stacked film
    • 堆叠薄膜形成方法
    • US06933241B2
    • 2005-08-23
    • US10446713
    • 2003-05-29
    • Hitoshi ShiraishiKenichi HayashiNaoto HiranoAtsushi Yamamoto
    • Hitoshi ShiraishiKenichi HayashiNaoto HiranoAtsushi Yamamoto
    • H01L21/311H01L21/3213H01L21/336H01L21/302
    • H01L29/66757H01L21/31116H01L21/32137
    • A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.
    • 用作薄膜晶体管的有源区的半导体膜和保护半导体膜的上氧化膜被干蚀刻以形成有源区。 在这种情况下,使用氟系气体作为蚀刻气体,在作为下面的膜的低氧化膜的时刻,将蚀刻气体从氟系气体切换为氯系气体 露出半导体膜。 作为氟系气体,使用CF 4和O 2的混合气体,适当地是CF 3〜4的气体比 混合气体中的O 2设定为1:1,并进行干法蚀刻。 通过该蚀刻,半导体膜和上氧化物膜的两层结构的侧面是最佳的锥形,并且防止了在跨越两层结构的膜中发生裂纹或断开。