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91. 发明授权

US07622361B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07622361B2
公开(公告)日：2009-11-24
申请号：US11822609
申请日：2007-07-09
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

92. 发明授权

US08980700B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US08980700B2
公开(公告)日：2015-03-17
申请号：US13204896
申请日：2011-08-08
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L21/00 , H01L51/56 , H01L27/12 , H01L29/786 , H01L51/00 , H01L27/32
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

93. 发明授权

US08067294B2 Method of manufacturing semiconductor device including protective film 有权
标题翻译：制造包括保护膜的半导体器件的方法
公开(公告)号：US08067294B2
公开(公告)日：2011-11-29
申请号：US12566040
申请日：2009-09-24
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/20
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

94. 发明授权

US07332381B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07332381B2
公开(公告)日：2008-02-19
申请号：US10283223
申请日：2002-10-30
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L21/00
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

95. 发明申请

US20070218650A1 Semiconductor device, method of manufacturing thereof, and method of manufacturing base material 有权
公开(公告)号：US20070218650A1
公开(公告)日：2007-09-20
申请号：US11798094
申请日：2007-05-10
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

96. 发明申请

US20110284858A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110284858A1
公开(公告)日：2011-11-24
申请号：US13204896
申请日：2011-08-08
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

97. 发明申请

US20050112805A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050112805A1
公开(公告)日：2005-05-26
申请号：US10967279
申请日：2004-10-19
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L29/786 , H01L21/762 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L51/52 , H01L51/56 , H01L21/00
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

98. 发明授权

US07994506B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994506B2
公开(公告)日：2011-08-09
申请号：US12635752
申请日：2009-12-11
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L29/04
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

99. 发明授权

US07883989B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07883989B2
公开(公告)日：2011-02-08
申请号：US12578722
申请日：2009-10-14
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

100. 发明申请

US20100148179A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100148179A1
公开(公告)日：2010-06-17
申请号：US12635752
申请日：2009-12-11
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L33/00
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

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