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91. 发明申请

US20120298978A1 LIGHT EMITTING DEVICE AND ELECTRONIC APPLIANCE USING THE SAME 有权
标题翻译：发光装置和使用该发光装置的电子设备
公开(公告)号：US20120298978A1
公开(公告)日：2012-11-29
申请号：US13568155
申请日：2012-08-07
申请人： Yuji IWAKI , Satoshi SEO , Takahiro KAWAKAMI , Hisao IKEDA , Junichiro SAKATA , Tomoya AOYAMA
发明人： Yuji IWAKI , Satoshi SEO , Takahiro KAWAKAMI , Hisao IKEDA , Junichiro SAKATA , Tomoya AOYAMA
IPC分类号： H01L51/54
CPC分类号： H01L51/0052 , H01L51/0071 , H01L51/0081 , H01L51/5052 , H01L51/5088 , H05B33/22 , Y10S428/917
摘要： A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As the organic compound, an aromatic hydrocarbon having an anthracene skeleton is preferably used. As such an aromatic hydrocarbon, t-BuDNA, DPAnth, DPPA, DNA, DMNA, t-BuDBA, and the like are listed. As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used. Further, the mixed layer preferably shows absorbance per 1 μm of 1 or less or does not show a distinct absorption peak in a spectrum of 450 to 650 nm when an absorption spectrum is measured.
摘要翻译：发光器件包括一对电极和设置在该对电极之间的混合层。混合层含有不含氮原子的有机化合物即不具有芳胺骨架的有机化合物和金属氧化物。作为有机化合物，优选使用具有蒽骨架的芳香族烃。作为这样的芳烃，列举了t-BuDNA，DPAnth，DPPA，DNA，DMNA，t-BuDBA等。作为金属氧化物，优选使用氧化钼，氧化钒，氧化钌，氧化铼等。此外，当测量吸收光谱时，混合层优选显示每1μm的吸光度为1或更小，或者在450至650nm的光谱中不显示不同的吸收峰。

92. 发明申请

US20120267678A1 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC APPLIANCE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光元件，发光装置，电子器具及其制造方法
公开(公告)号：US20120267678A1
公开(公告)日：2012-10-25
申请号：US13541109
申请日：2012-07-03
申请人： Junichiro SAKATA , Hideko INOUE , Satoshi SEO , Nobuharu OHSAWA
发明人： Junichiro SAKATA , Hideko INOUE , Satoshi SEO , Nobuharu OHSAWA
IPC分类号： H01L51/52
CPC分类号： H01L51/5203 , H01L51/006 , H01L51/0067 , H01L51/008 , H01L51/0081 , H01L51/0085 , H01L51/0087 , H01L51/009 , H01L51/5012
摘要： A light-emitting element is provided which has a light-emitting layer between a first electrode and a second electrode, where the light-emitting layer has a first layer and a second layer; the first layer contains a first organic compound and a third organic compound; the second layer contains a second organic compound and the third organic compound; the first layer is provided to be in contact with the second layer on the first electrode side; the first organic compound is an organic compound with an electron transporting property; the second organic compound is an organic compound with a hole transporting property; the third organic compound has an electron trapping property; and light emission from the third organic compound can be obtained when voltage is applied to the first electrode and the second electrode so that the potential of the first electrode is higher than that of the second electrode.
摘要翻译：提供一种在第一电极和第二电极之间具有发光层的发光元件，其中发光层具有第一层和第二层; 第一层包含第一有机化合物和第三有机化合物; 第二层包含第二有机化合物和第三有机化合物; 第一层设置成与第一电极侧的第二层接触; 第一有机化合物是具有电子传输性质的有机化合物; 第二有机化合物是具有空穴传输性的有机化合物; 第三有机化合物具有电子捕获性; 并且当对第一电极和第二电极施加电压使得第一电极的电位高于第二电极的电位时，可以获得来自第三有机化合物的发光。

93. 发明申请

US20120181522A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120181522A1
公开(公告)日：2012-07-19
申请号：US13417551
申请日：2012-03-12
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
IPC分类号： H01L27/32
CPC分类号： H01L27/3272 , H01L27/1218 , H01L27/1222 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L33/08 , H01L33/36 , H01L33/50 , H01L33/56 , H01L33/58 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5262 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
摘要翻译：本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层层，其中第一至第三发光元件中的每一个具有第一电极，第一电极上的电致发光层和电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层，并且在与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

94. 发明申请

US20110140205A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110140205A1
公开(公告)日：2011-06-16
申请号：US12965197
申请日：2010-12-10
申请人： Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO
发明人： Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/124 , H01L29/24
摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.
摘要翻译：已经理解了硅半导体的许多物理性质，而氧化物半导体的许多物理性质仍然不清楚。特别是杂质对氧化物半导体的不利影响还不清楚。鉴于上述，公开了防止或消除影响包括氧化物半导体层的半导体器件的电特性的杂质的结构。设置在栅电极和氧化物半导体层之间并且氧化物半导体层中的氮浓度为1×1020原子/ cm3以下的栅极，氧化物半导体层和栅极绝缘层的半导体装置为提供。

95. 发明申请

US20110111558A1 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE, AND DEPOSITION APPARATUS 有权
标题翻译：制造半导体元件和半导体器件的方法及沉积装置
公开(公告)号：US20110111558A1
公开(公告)日：2011-05-12
申请号：US12938538
申请日：2010-11-03
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Toru TAKAYAMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Toru TAKAYAMA
IPC分类号： H01L21/336 , C23C14/34 , C23C14/08
CPC分类号： H01L21/6719 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/67207 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.
摘要翻译：本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。此外，目的在于提供一种形成含有少量杂质的薄膜的方法。此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。此外，可以提供形成含有少量杂质的薄膜的方法。此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

96. 发明申请

US20100308320A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20100308320A1
公开(公告)日：2010-12-09
申请号：US12859811
申请日：2010-08-20
申请人： Takahiro KAWAKAMI , Tomoya AOYAMA , Junichiro SAKATA , Hisao IKEDA , Satoshi SEO , Yuji IWAKI
发明人： Takahiro KAWAKAMI , Tomoya AOYAMA , Junichiro SAKATA , Hisao IKEDA , Satoshi SEO , Yuji IWAKI
IPC分类号： H01L51/54
CPC分类号： H01L51/5088 , H01L51/005 , H01L51/0052 , H01L51/0081 , H01L51/5092
摘要： It is an object of the present invention to provide a functional layer for protecting a light emitting element from being deteriorated by a physical or chemical influence when the light emitting element is manufactured or driven, and to attain extension of lifetime of an element and improvement of element characteristics without increasing a drive voltage and degrading transmittance and color purity by providing such a functional layer. One feature of the present invention is to provide a buffer layer made of a composite material for a light emitting element including aromatic hydrocarbon containing at least one vinyl skeleton and metal oxide in part of a light emitting substance containing layer, in the light emitting element fowled by interposing the light emitting substance containing layer between a pair of electrodes. The composite material for a light emitting element for forming the buffer layer of the present invention has high conductivity and is superior in transparency.
摘要翻译：本发明的目的是提供一种功能层，用于在制造或驱动发光元件时保护发光元件免受物理或化学影响而劣化，并且使元件的使用寿命延长元件特性，而不增加驱动电压并通过提供这样的功能层降低透射率和色纯度。本发明的一个特征是提供一种由发光元件的复合材料构成的缓冲层，所述缓冲层包含发光元件的一部分中包含至少一个乙烯基骨架的芳族烃和部分发光物质含有层中的金属氧化物，通过将发光物质含有层插入在一对电极之间。本发明的缓冲层形成用发光元件用复合材料的导电性高，透明性优异。

97. 发明申请

US20100280642A1 PLAYBACK APPARATUS, PLAYBACK METHOD, AND RECORDING MEDIUM 有权
标题翻译：回放装置，回放方法和记录介质
公开(公告)号：US20100280642A1
公开(公告)日：2010-11-04
申请号：US12834605
申请日：2010-07-12
申请人： Junichiro SAKATA
发明人： Junichiro SAKATA
IPC分类号： G06F17/00
CPC分类号： G06F3/16 , G06F3/0481 , G06F17/30772 , G10H1/0041 , G11B27/034 , G11B27/105 , G11B27/34 , G11B2020/10546 , G11B2220/213 , G11B2220/2545 , H04N21/4312 , H04N21/4825
摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.
摘要翻译：音频数据由个人计算机与容易识别的回放过程的关系回放。显示播放列表的内容的显示被布置和显示，使得内容从播放过程的图像的显示器上显示的当前正在播放的内容的播放顺序依次连续显示，或者从显示当前正在播放的内容的显示器。当多个播放列表中的一个播放列表的一条内容的回放被终止，并且播放另一个播放列表的一条内容时，至少播放当前正在播放的内容和随后的内容显示回放，以便区分内容。

98. 发明申请

US20100193782A1 TRANSISTOR AND METHOD FOR MANUFACTURING THE TRANSISTOR 有权
标题翻译：用于制造晶体管的晶体管和方法
公开(公告)号：US20100193782A1
公开(公告)日：2010-08-05
申请号：US12690453
申请日：2010-01-20
申请人： Junichiro SAKATA
发明人： Junichiro SAKATA
IPC分类号： H01L29/786 , H01L29/24 , H01L21/04 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： It is an object to reduce characteristic variation among transistors and reduce contact resistance between an oxide semiconductor layer and a source electrode layer and a drain electrode layer, in a transistor where the oxide semiconductor layer is used as a channel layer. In a transistor where an oxide semiconductor is used as a channel layer, at least an amorphous structure is included in a region of an oxide semiconductor layer between a source electrode layer and a drain electrode layer, where a channel is to be formed, and a crystal structure is included in a region of the oxide semiconductor layer which is electrically connected to an external portion such as the source electrode layer and the drain electrode layer.
摘要翻译：在氧化物半导体层用作沟道层的晶体管中，目的是减小晶体管之间的特性变化并降低氧化物半导体层与源电极层和漏电极层之间的接触电阻。在其中使用氧化物半导体作为沟道层的晶体管中，至少一个非晶结构包括在要形成沟道的源电极层和漏电极层之间的氧化物半导体层的区域中，以及晶体结构包括在电连接到诸如源极电极层和漏极电极层的外部的氧化物半导体层的区域中。

99. 发明申请

US20100172632A1 PLAYBACK APPARATUS, PLAYBACK METHOD, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20100172632A1
公开(公告)日：2010-07-08
申请号：US12724678
申请日：2010-03-16
申请人： Junichiro SAKATA
发明人： Junichiro SAKATA
IPC分类号： H04N5/91
CPC分类号： G06F3/16 , G06F3/0481 , G06F17/30772 , G10H1/0041 , G11B27/034 , G11B27/105 , G11B27/34 , G11B2020/10546 , G11B2220/213 , G11B2220/2545 , H04N21/4312 , H04N21/4825
摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.

100. 发明申请

US20100117074A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100117074A1
公开(公告)日：2010-05-13
申请号：US12612096
申请日：2009-11-04
申请人： Shunpei YAMAZAKI , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78669 , H01L21/02565 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78678 , H01L29/7869 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
摘要翻译：本发明的目的是提供一种包括电特性稳定的薄膜晶体管的高度可靠的半导体器件。此外，另一个目的是以低成本，高生产率制造高度可靠的半导体器件。在包括薄膜晶体管的半导体器件中，薄膜晶体管的半导体层形成有添加了金属元素的氧化物半导体层。作为金属元素，使用铁，镍，钴，铜，金，锰，钼，钨，铌和钽中的至少一种金属元素。此外，氧化物半导体层含有铟，镓和锌。

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