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    • 91. 发明授权
    • Bi-level and full-color video combination for video communication
    • 双级和全色视频组合,用于视频通信
    • US07359004B2
    • 2008-04-15
    • US10445310
    • 2003-05-23
    • Keman YuJiang LiShipeng Li
    • Keman YuJiang LiShipeng Li
    • H04N7/12H04N11/02
    • H04L12/5602
    • Systems and methods for video communication are described. In one aspect, network bandwidth conditions are estimated. Bi-level or full-color video is then transmitted over the network at transmission bit rates that are controlled as a function of the estimated bandwidth conditions. To this end, network bandwidth capability is periodically probed to identify similar, additional, or decreased bandwidth capabilities as compared to the estimated bandwidth conditions. Decisions to hold, decrease, or increase the video transmission bit rate are made based on the estimated bandwidth conditions in view of the probing operations. When the transmission bit rate is increased or decreased, the transmission bit rate is calculated to target an upper or lower bit rate, both of which are indicated by the estimated bandwidth conditions. Bi-level video communication is switched to full-color video transmission, or vice versa, when the video transmission bit rate respectively reaches the upper bit rate or the lower bit rate.
    • 描述视频通信的系统和方法。 在一个方面,估计网络带宽条件。 然后以传输比特速率通过网络传输双电平或全色视频,该传输比特率作为估计的带宽条件的函数来控制。 为此,与估计的带宽条件相比,周期性地探测网络带宽能力以识别类似的,附加的或降低的带宽能力。 鉴于探测操作,基于估计的带宽条件进行保持,减少或增加视频传输比特率的决定。 当传输比特率增加或减少时,传输比特率被计算为针对上限或更低比特率,两者都由估计的带宽条件指示。 当视频传输比特率分别达到较高比特率或较低比特率时,双级视频通信切换到全色视频传输,反之亦然。
    • 93. 发明申请
    • Motor drive control
    • 电机驱动控制
    • US20070290640A1
    • 2007-12-20
    • US11784505
    • 2007-04-06
    • Connel WilliamsJiang Li
    • Connel WilliamsJiang Li
    • H02P1/18
    • H02P6/00H02M7/5387H02M2001/0009H02P6/28
    • A drive system for a multi-phase brushless motor comprises a single current sensor drive circuit, including switch means 16, switchable between a plurality of states. A controller is arranged to provide pulse width modulated drive signals to control the switch means 16 so as to control the time that the drive circuit switches between said states in each of a series of pulse width modulation periods, and to: determine a demanded voltage parameter set, identify PWM periods during which the demanded voltage parameter set is such that neither two nominal corresponding state times, nor a higher number of equivalent state times producing the same net voltage, in a single PWM period, would allow a predetermined minimum time to be spent in a predetermined number of active states sufficient for current sensing. For such PWM periods, modified state times are calculated that do allow sufficient time to be spent in a sufficient number of active states for the current in each of the phases to be determined by means of the current sensor 24.
    • 用于多相无刷电动机的驱动系统包括单个电流传感器驱动电路,包括可在多个状态之间切换的开关装置16。 控制器被布置成提供脉冲宽度调制的驱动信号以控制开关装置16,以便控制驱动电路在一系列脉冲宽度调制周期中的每一个中在所述状态之间切换的时间,并且:确定所需的电压参数 设置,识别所需电压参数组的PWM周期,使得在单个PWM周期内两个标称对应状态时间和产生相同净电压的较高数量的等效状态时间都不会使预定的最小时间成为 花费在足以进行电流感测的预定数量的活动状态。 对于这样的PWM周期,计算修改的状态时间,其允许足够的时间花费在用于通过电流传感器24确定的每个相位中的电流的足够数量的有效状态。
    • 94. 发明申请
    • GaN SEMICONDUCTOR DEVICE
    • GaN半导体器件
    • US20070210335A1
    • 2007-09-13
    • US11568348
    • 2005-05-02
    • Nariaki IkedaJiang LiSeikoh Yoshida
    • Nariaki IkedaJiang LiSeikoh Yoshida
    • H01L29/47
    • H01L29/7787H01L29/2003
    • A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nitride semiconductor layer containing at least one hetero junction structure of III-V nitride semiconductors having different band gap energies; a first anode electrode arranged on a surface of said III-V nitride semiconductor by Schottky junction; a second anode electrode which is arranged on the surface of said III-V nitride semiconductor layer by Schottky junction, is electrically connected with said first anode electrode and forms a higher Schottky barrier than a Schottky barrier formed by said first anode electrode; and an insulating protection film which is brought into contact with said second anode electrode and is arranged on the surface of said III-V nitride semiconductor layer.
    • 具有低导通电阻的GaN半导体器件在施加反向偏置电压时具有非常小的漏电流并且具有非常优异的耐电压特性,所述GaN半导体器件具有设置有III-V族氮化物半导体 含有具有不同带隙能量的III-V族氮化物半导体的至少一种异质结结构的层; 通过肖特基结布置在所述III-V族氮化物半导体的表面上的第一阳极电极; 通过肖特基结布置在所述III-V族氮化物半导体层的表面上的第二阳极电极与所述第一阳极电连接,并形成比由所述第一阳极形成的肖特基势垒更高的肖特基势垒; 以及与所述第二阳极电极接触并设置在所述III-V族氮化物半导体层的表面上的绝缘保护膜。
    • 97. 发明申请
    • Silica-containing nucleating agent compositions and methods for using such compositions in polyolefins
    • 含硅的成核剂组合物和在聚烯烃中使用这些组合物的方法
    • US20070060696A1
    • 2007-03-15
    • US11224455
    • 2005-09-12
    • Jiang LiJiannong XuMichael Mannion
    • Jiang LiJiannong XuMichael Mannion
    • C08K3/34C04B40/00
    • C08K5/1575
    • Diacetals of sorbitols and xylitols are employed in polyolefins as nucleating agents. Diacetals of sorbitols and xylitol nucleating agents may be provided in granular or powder form from hoppers or mixing equipment into polyolefins during the formation of polymeric compositions and polymeric articles. Flow of diacetals of sorbitols and xylitols is improved by the use of certain silicas, in certain defined weight percentages. Submicron size range silica compounds may provide excellent flow enhancement properties when blended and used with diacetals of sorbitols and xylitols powder compounds. A hydrophobic silica mixed with diacetals of sorbitols and xylitols compounds also may provide enhanced flow properties for such mixture, as compared to mixtures using hydrophilic silica. Loading ranges of silica may be important in improving the flow of diacetals of sorbitols and xylitols compounds.
    • 山梨糖醇和木糖醇的二缩醛用作聚烯烃作为成核剂。 山梨糖醇和木糖醇成核剂的二缩醛可以在形成聚合物组合物和聚合物制品期间以颗粒或粉末形式从料斗或混合设备提供到聚烯烃中。 通过使用某些确定的重量百分比的某些二氧化硅,改善了山梨糖醇和木糖醇的二缩醛的流动。 亚微米尺寸范围的二氧化硅化合物可以在与山梨糖醇和木糖醇粉末化合物的二缩醛混合并使用时提供优异的流动增强性能。 与使用亲水性二氧化硅的混合物相比,与二缩醛山梨糖醇和木糖醇化合物混合的疏水性二氧化硅也可以为这种混合物提供增强的流动性质。 二氧化硅的负载范围在改善山梨糖醇和木糖醇化合物的二缩醛的流动中可能是重要的。
    • 98. 发明授权
    • Method and system for applying testing voltage signal
    • 应用测试电压信号的方法和系统
    • US07073104B1
    • 2006-07-04
    • US10384856
    • 2003-03-10
    • Jiang LiRichard FastowSteve Tam
    • Jiang LiRichard FastowSteve Tam
    • G11C29/00
    • G11C29/12G11C16/04G11C29/12005G11C29/50004G11C2029/1202
    • In a method and system for applying a testing voltage signal, a voltage source generates the testing voltage signal that ramps from an initial voltage to an intermediate voltage with a first ramping rate. In addition, the testing voltage then ramps from the intermediate voltage to an end voltage with a second ramping rate, with the first ramping rate being greater than the second ramping rate. The present invention may be applied to particular advantage when the testing voltage signal is applied on a control gate of a flash memory cell for channel erasure of the flash memory cell. In this manner, the testing voltage signal ramps to the end voltage with reduced time for minimizing testing time.
    • 在用于施加测试电压信号的方法和系统中,电压源产生以初始电压向第一斜坡率的中间电压斜坡的测试电压信号。 此外,测试电压然后以第二斜坡率从中间电压斜坡到终止电压,其中第一斜坡率大于第二斜坡率。 当测试电压信号被施加在闪速存储器单元的控制栅上用于闪存单元的通道擦除时,本发明可以被应用于特别的优点。 以这种方式,测试电压信号以缩短的时间斜坡到终端电压,以最小化测试时间。