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    • 93. 发明申请
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20060141796A1
    • 2006-06-29
    • US11120531
    • 2005-05-02
    • Jae KimKi Nam
    • Jae KimKi Nam
    • H01L21/461H01L21/302
    • H01L21/02057H01L27/10876H01L29/1037
    • The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.
    • 该方法包括在硅衬底上形成隔离膜以限定有源区; 在包含隔离膜的基板的整个表面上形成抗反射膜; 在防反射膜上形成感光膜图案,同时使隔离膜的一部分或与隔离膜相邻的有源区域暴露; 通过使用感光膜图案作为蚀刻掩模来蚀刻抗反射膜,隔离膜和基板以使有源区域凹陷; 对基板结果进行光蚀刻处理,而不去除剩余的感光膜图案,以去除在凹入的有源区域的表面上形成的损伤层和碳污染物; 并除去剩余的感光膜图案和抗反射膜。
    • 94. 发明申请
    • Semiconductor device and fabricating method thereof
    • 半导体器件及其制造方法
    • US20060138570A1
    • 2006-06-29
    • US11317987
    • 2005-12-22
    • Jae Kim
    • Jae Kim
    • H01L29/94H01L29/76
    • H01L29/513H01L21/28167H01L21/28202
    • A semiconductor device and semiconductor device fabricating method may enhance device reliability by forming a chemical oxide buffer layer prior to forming a high-k gate oxide layer. The semiconductor device includes a semiconductor substrate; a chemical oxide buffer layer on the semiconductor substrate; a high-k gate oxide layer on the buffer layer; a gate electrode formed on the high-k gate oxide layer; and lightly doped drain and source/drain regions formed in a surface of the semiconductor substrate beside the gate electrode. By forming the buffer layer of chemical oxide on the semiconductor substrate and by forming the gate oxide layer on the buffer layer, a stable high-k material can be provided at the interface between the high-k gate oxide layer and the semiconductor substrate.
    • 半导体器件和半导体器件制造方法可以在形成高k栅极氧化物层之前形成化学氧化物缓冲层来提高器件的可靠性。 半导体器件包括半导体衬底; 半导体衬底上的化学氧化物缓冲层; 缓冲层上的高k栅氧化层; 形成在高k栅极氧化物层上的栅电极; 以及形成在栅电极旁边的半导体衬底的表面中的轻掺杂漏极和源/漏区。 通过在半导体衬底上形成化学氧化物的缓冲层,并通过在缓冲层上形成栅极氧化层,可以在高k栅极氧化物层和半导体衬底之间的界面处提供稳定的高k材料。
    • 97. 发明申请
    • Terminal and method of automatically executing function establishment thereof
    • 终端及其自动执行功能建立方法
    • US20060068772A1
    • 2006-03-30
    • US11228377
    • 2005-09-16
    • Jae Kim
    • Jae Kim
    • H04M3/00
    • H04W8/245H04M1/72563H04M3/42178H04M3/42272H04M2207/18H04W8/183
    • A terminal and method of automatically executing function establishment thereof are disclosed, by which establishments of supportable services and additional functions can be supported under a user-oriented environment, by which a function establishment of the terminal can be automatically executed according to a user, and by which function establishment contents previously used by a user can be automatically applied to a terminal that is for rent or newly purchased. The present invention includes registering an establishment value used in executing a prescribed terminal function to a communication system, requesting the establishment value to the communication system from a random terminal, receiving the establishment value from the communication system to the terminal, and allowing the terminal to change a previous establishment value of the function previously stored in the terminal using the received establishment value.
    • 公开了一种自动执行功能建立的终端和方法,通过该终端和方法可以在面向用户的环境下支持可支持服务和附加功能的建立,通过该环境可以根据用户自动执行终端的功能建立,以及 由用户先前使用的功能建立内容可以自动地应用于租用或新购买的终端。 本发明包括将用于执行规定的终端功能的建立值注册到通信系统,从随机终端向通信系统请求建立值,从通信系统接收到终端的建立值,并且允许终端 使用接收到的建立值来改变先前存储在终端中的功能的先前建立值。
    • 100. 发明申请
    • Drain pump and drum type washing machine having the same
    • 排水泵和滚筒式洗衣机具有相同的功能
    • US20050274158A1
    • 2005-12-15
    • US11125172
    • 2005-05-10
    • Jae Kim
    • Jae Kim
    • D06F39/08F04D15/00B08B3/12
    • D06F39/083D06F2202/04F04D15/0077
    • A drain pump and drum type washing machine having the same. The drum type washing machine is designed to prevent water, remaining in the drain pump, from being frozen, to thereby avoid malfunction of the drain pump. The drum type washing machine includes a housing defining an outer appearance of the washing machine, a water tub installed in the housing to contain water therein, a drain pump disposed below the water tub to generate a pumping force required to suction the water from the water tub and externally drain the water, and a water suction device connected with the drain pump to suction the water remaining in the drain pump. When the peripheral temperature falls below zero, the water suction device suctions the water remaining in the drain pump, such that substantially no water remains in the drain pump. The present invention prevents the water in the drain pump from being frozen, thereby avoiding a malfunction of the drain pump.
    • 排水泵和滚筒式洗衣机具有相同的功能。 滚筒式洗衣机旨在防止留在排水泵中的水被冻结,从而避免排水泵的故障。 滚筒式洗衣机包括限定洗衣机外观的外壳,安装在壳体中以容纳水的水桶,设置在水桶下方的排水泵,以产生从水中吸取水所需的抽吸力 水桶外部排出水,以及与排水泵连接的吸水装置,以抽吸剩余在排水泵中的水。 当外围温度低于零时,吸水装置吸入排水泵中残留的水,使得排水泵中基本上没有水残留。 本发明防止排水泵中的水被冻结,从而避免了排水泵的故障。