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    • 91. 发明授权
    • Nano device integrated on graphene and monocrystalline graphite
    • 纳米器件集成在石墨烯和单晶石墨上
    • US08664641B2
    • 2014-03-04
    • US13376382
    • 2010-05-27
    • Gyu-chul YiYong-Jin Kim
    • Gyu-chul YiYong-Jin Kim
    • H01L29/06
    • B82B1/00B82Y30/00
    • Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.
    • 本发明公开了一种纳米器件,包括:碳层,其包含具有蜂窝状平面结构的单层石墨烯,碳原子彼此连接,两层或更多层单晶石墨; 以及形成在碳层上的一个或多个垂直生长的纳米结构。 该纳米器件可用于制造其中包括石墨烯电子器件和光子器件的各种器件彼此连接的集成电路,并且是具有少量杂质的高纯度和高质量的纳米器件,因为 不使用金属催化剂。
    • 92. 发明授权
    • Apparatus and method for monitoring chamber status in semiconductor fabrication process
    • 用于监测半导体制造工艺中的室状态的装置和方法
    • US08304264B2
    • 2012-11-06
    • US12858691
    • 2010-08-18
    • Sang-Wuk ParkWoo-Seok KimYong-Jin Kim
    • Sang-Wuk ParkWoo-Seok KimYong-Jin Kim
    • G01R31/26
    • H04J14/08H01L21/67069H01L21/67253
    • A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.
    • 室状态监视装置包括多个室,时分多路复用器,被配置为经由光纤探针从每个室接收光信号,以将每个光信号划分成具有预定持续时间的第一时隙,并将多路复用 用于产生OTDM信号的第一时隙;被配置为根据波长接收和分散OTDM信号以测量频谱信息的多输入光发射分光器;以及控制器,被配置为将分散的OTDM信号的频谱信息划分为第二时隙 以其间的预定时间间隔,根据室对第二时隙进行分类,以获得各个室的光信号的频谱信息,并且根据光信号的频谱信息来控制每个室中的端点检测 相应的房间。
    • 93. 发明申请
    • Nano Device
    • 纳米器件
    • US20120132892A1
    • 2012-05-31
    • US13376382
    • 2010-05-27
    • Gyu-chul YiYong-Jin Kim
    • Gyu-chul YiYong-Jin Kim
    • H01L29/772H01L29/15
    • B82B1/00B82Y30/00
    • Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.
    • 本发明公开了一种纳米器件,包括:碳层,其包含具有蜂窝状平面结构的单层石墨烯,碳原子彼此连接,两层或更多层单晶石墨; 以及形成在碳层上的一个或多个垂直生长的纳米结构。 该纳米器件可用于制造其中包括石墨烯电子器件和光子器件的各种器件彼此连接的集成电路,并且是具有少量杂质的高纯度和高质量的纳米器件,因为 不使用金属催化剂。
    • 99. 发明申请
    • Process Control Methods and Systems
    • 过程控制方法和系统
    • US20100120178A1
    • 2010-05-13
    • US12616510
    • 2009-11-11
    • Seok-Hyun LimMyeong-Cheol KimYong-Jin KimMoon-Sang LeeKi-Chul Hwang
    • Seok-Hyun LimMyeong-Cheol KimYong-Jin KimMoon-Sang LeeKi-Chul Hwang
    • H01L21/66
    • H01L22/12H01L22/20
    • A process control method includes setting first through fourth conditions, forming a first pattern by performing a first process on a semiconductor wafer, measuring the first pattern using a first measuring equipment to obtain a first result, comparing the first result with the first condition, forming a second pattern by performing a second process on the semiconductor wafer, comparing a period of the second process with the second condition, measuring the second pattern using a second measuring equipment to obtain a second result, comparing the second result with the third condition, forming a third pattern by performing a third process on the semiconductor wafer, measuring the third pattern using the a second measuring equipment to obtain a third result, and comparing the third result with the fourth condition.
    • 一种处理控制方法,包括设置第一至第四条件,通过在半导体晶片上执行第一处理形成第一图案,使用第一测量设备测量第一图案以获得第一结果,将第一结果与第一条件进行比较,形成 第二模式,通过在半导体晶片上执行第二处理,将第二处理的周期与第二条件进行比较,使用第二测量设备测量第二模式以获得第二结果,将第二结果与第三条件进行比较,形成 通过在半导体晶片上进行第三处理,使用第二测量设备测量第三图案以获得第三结果,并将第三结果与第四条件进行比较,从而形成第三图案。