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91. 发明授权

US6006720A Internal combustion engine 失效
标题翻译：内燃机
公开(公告)号：US6006720A
公开(公告)日：1999-12-28
申请号：US5883
申请日：1998-01-12
申请人： Hiromichi Yanagihara , Yasuo Sato
发明人： Hiromichi Yanagihara , Yasuo Sato
IPC分类号： F02B1/14 , F02B3/06 , F02B3/08 , F02B11/00 , F02B23/10 , F02D41/04 , F02D41/34 , F02D41/40 , F02M63/00
CPC分类号： F02B3/08 , F02B2275/14 , F02B23/101 , F02B3/06 , Y02T10/123
摘要： An internal combustion engine comprising a fuel injector arranged in a combustion chamber. A fuel is injected at a timing when the temperature T of the fuel particles fed into the combustion chamber rises past the vicinity of a minimum temperature of a cool flame region during a compression stroke and reaches a reaction stagnation region near the top dead center of the compression stroke and the fuel particles are dispersed throughout the combustion chamber as a whole near the top dead center of the compression stroke.
摘要翻译：一种内燃机，包括布置在燃烧室中的燃料喷射器。在进入燃烧室的燃料粒子的温度T在压缩行程中上升到超过冷焰区域的最低温度附近的时刻，燃料被喷射，并且到达靠近燃烧室的上止点附近的反应停滞区域压缩行程和燃料颗粒整体在压缩行程的上止点附近分散在整个燃烧室内。

92. 发明授权

US5960283A Nonvolatile semiconductor memory device and method of fabrication of the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US5960283A
公开(公告)日：1999-09-28
申请号：US947349
申请日：1997-10-08
申请人： Yasuo Sato
发明人： Yasuo Sato
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/7885
摘要： A nonvolatile semiconductor memory device and a method of fabrication thereof wherein the nonvolatile semiconductor memory device has at least one memory cell transistor of DAS type and an externally-accessible conduction layer electrically connected to the channel region of the transistor.
摘要翻译：一种非易失性半导体存储器件及其制造方法，其中非易失性半导体存储器件具有DAS型的至少一个存储单元晶体管和与晶体管的沟道区域电连接的外部可访问的导电层。

93. 发明授权

US5900661A EEPROM with bit lines below word lines 失效
标题翻译： EEPROM位于字线下方的EEPROM
公开(公告)号：US5900661A
公开(公告)日：1999-05-04
申请号：US931517
申请日：1997-09-16
申请人： Yasuo Sato
发明人： Yasuo Sato
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , G11C11/34
CPC分类号： H01L27/11521 , H01L27/115
摘要： In a semiconductor device and a manufacturing method therefor, in a nonvolatile semiconductor memory such as an EEPROM having a floating gate, bit lines are formed under word lines to easily and properly realize bit contact, and a memory cell portion and a peripheral circuit portion are manufactured with good uniformity. In the memory cell portion of this nonvolatile semiconductor memory, a polysilicon film is patterned to form a gate counterelectrode and the bit lines substantially at the same level. The gate counterelectrode opposes a floating gate and is capacitively coupled to the floating gate with a dielectric film intervened therebetween on a field oxide film which is an element isolation structure. The word lines extend on an insulating film formed on the bit lines to cross the bit lines and are electrically connected to lower counterelectrodes. Therefore, the bit lines substantially exist under the word lines. The floating gate of the memory cell portion and the gate of the peripheral circuit portion, or the gate counterelectrode and the bit lines of the memory cell portion and the wiring layer of the peripheral circuit portion are simultaneously formed.
摘要翻译：在半导体装置及其制造方法中，在诸如具有浮动栅极的EEPROM的非易失性半导体存储器中，在字线下方形成位线以容易且适当地实现位接触，并且存储单元部分和外围电路部分制造均匀性好。在该非易失性半导体存储器的存储单元部分中，对多晶硅膜进行构图以形成栅极对电极，并且位线基本上处于相同的水平。栅极对电极与浮动栅极相对，并且在作为元件隔离结构的场氧化物膜上介于其间的电介质膜电容耦合到浮动栅极。字线在形成在位线上的绝缘膜上延伸以跨越位线并且电连接到下反相电极。因此，位线基本上存在于字线下面。同时形成存储单元部分的浮置栅极，外围电路部分的栅极，栅极反电极以及存储单元部分的位线和外围电路部分的布线层。

94. 发明授权

US5871851A Magnetic shielding material for television cathode-ray tube and process for producing the same 失效
标题翻译：电视阴极射线管用磁屏蔽材料及其制造方法
公开(公告)号：US5871851A
公开(公告)日：1999-02-16
申请号：US920174
申请日：1997-08-25
申请人： Keisuke Fukumizu , Hiroaki Kato , Teruo Takeuchi , Takahide Shimazu , Yasuo Sato , Tatsuo Amaike , Ryoichi Yoshihara , Takeshi Harada
发明人： Keisuke Fukumizu , Hiroaki Kato , Teruo Takeuchi , Takahide Shimazu , Yasuo Sato , Tatsuo Amaike , Ryoichi Yoshihara , Takeshi Harada
IPC分类号： C21D8/02 , C21D8/12 , H01J29/06 , B32B15/18
CPC分类号： H01J29/06 , C21D8/0236 , C21D8/1277 , C21D8/0278 , C21D8/1233 , Y10T428/12854 , Y10T428/12937
摘要： A 0.1 to 0.5 mm-thick plated steel sheet having high coercive force and magnetic flux density is provided by hot rolling a slab comprising by weight carbon: 0.01 to 0.09%, silicon: not more than 1.0%, phosphorus: not more than 0.3%, manganese: not more than 1.5%, sulfur: not more than 0.04%, aluminum: not more than 1.0%, and nitrogen: not more than 0.01% with the balance consisting of iron and unavoidable impurities, cold rolling the hot rolled sheet, annealing the cold rolled sheet to prepare a steel sheet having an average grain diameter of 3 to 15 .mu.m, temper rolling the steel sheet with a reduction ratio of not more than 3%, and plating the temper rolled sheet with chromium or nickel. This enables the provision of a magnetic shielding material having no significant drift and very good electron beam landing properties.
摘要翻译：通过热轧含有重量百分比为0.01〜0.09％的硅，不超过1.0％的磷，不超过0.3％的平板，提供具有高矫顽力和磁通密度的0.1〜0.5mm厚的镀覆钢板，，锰：不大于1.5％，硫：不大于0.04％，铝：不大于1.0％，氮：不大于0.01％，余量由铁和不可避免的杂质组成，冷轧热轧板，对冷轧板进行退火，制备平均粒径为3〜15μm的钢板，以3％以下的压下率对钢板进行回火处理，并对铬或镍进行镀层。这使得能够提供没有显着漂移的磁屏蔽材料和非常好的电子束着陆性能。

95. 发明授权

US5612238A Method of manufacturing first and second memory cell arrays with a capacitor and a nonvolatile memory cell 失效
标题翻译：用电容器和非易失性存储单元制造第一和第二存储单元阵列的方法
公开(公告)号：US5612238A
公开(公告)日：1997-03-18
申请号：US640684
申请日：1996-05-01
申请人： Yasuo Sato , Shigeki Amano
发明人： Yasuo Sato , Shigeki Amano
IPC分类号： G11C11/00 , G11C14/00 , H01L21/8239 , H01L21/8242 , H01L27/10 , H01L27/105 , H01L27/108 , H01L21/8247
CPC分类号： G11C11/005 , G11C14/00 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L27/10852
摘要： A DRAM includes a main section including a DRAM memory cell array including a plurality of DRAM cells arranged in an array, a spare section including a Spare DRAM memory cell array including a plurality of DRAM memory cells arranged in an array, an address decoder for specifying addresses respectively of the DRAM memory cell array and the spare DRAM memory cell array, and a defective bit replacement control circuit which is connected to the address decoder and which includes a plurality of electrically rewritable nonvolatile memory cells.
摘要翻译： DRAM包括主要部分，其包括包括排列成阵列的多个DRAM单元的DRAM存储单元阵列，备有包括排列成阵列的多个DRAM存储单元的备用DRAM存储单元阵列的备用区，用于指定分别存储DRAM存储单元阵列和备用DRAM存储单元阵列的地址以及连接到地址解码器并且包括多个电可重写非易失性存储单元的有缺陷位置换控制电路。

96. 发明授权

US5594688A Nonvolatile semiconductor memory device and method of producing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US5594688A
公开(公告)日：1997-01-14
申请号：US499379
申请日：1995-07-07
申请人： Yasuo Sato
发明人： Yasuo Sato
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324
摘要： A nonvolatile semiconductor memory device has a semiconductor substrate of a first conductivity type, at least a pair of element isolation insulating films and a pair of spaced source/drawn regions of a second conductivity type different from the first conductivity type and formed in a surface of the semiconductor substrate. A floating gate electrode is formed above a channel region disposed between the pair of source/drain regions in the surface of the semiconductor substrate in an insulated relationship with the channel region. The floating gate electrode overlaps each of the element isolation insulating films and a gap is formed between an underside of the floating gate electrode and each of the element isolation insulating films at each of portions thereof where the floating gate electrode overlaps the pair of element isolation insulating films, respectively. A control gate electrode is formed above the floating gate electrode in an insulated relationship with the floating gate electrode. A part of the control gate electrode extends beyond a side of the floating gate electrode to an underside of the floating gate electrode facing each of the gaps.
摘要翻译：非易失性半导体存储器件具有第一导电类型的半导体衬底，至少一对元件隔离绝缘膜和与第一导电类型不同的第二导电类型的一对隔开的源极/引出区域，并且形成在半导体衬底。在与沟道区域绝缘的关系中，在设置在半导体衬底的表面中的一对源极/漏极区域之间的沟道区域上方形成浮栅电极。浮栅电极与每个元件隔离绝缘膜重叠，并且在浮置栅电极与一对元件隔离绝缘层重叠的部分的每个部分处，在浮置栅电极的下侧和每个元件隔离绝缘膜之间形成间隙电影。控制栅电极以与浮置栅电极绝缘的关系形成在浮置栅电极的上方。控制栅电极的一部分延伸超过浮栅电极的一侧，面向每个间隙的浮栅电极的下侧。

97. 发明授权

US4940479A Method for manufacturing float glass 失效
标题翻译：浮法玻璃的制造方法
公开(公告)号：US4940479A
公开(公告)日：1990-07-10
申请号：US234677
申请日：1988-08-22
申请人： Yasuo Sato , Tsunehiro Saito , Toshihito Kamioka , Yukio Yoskikawa , Masaaki Yoshikawa
发明人： Yasuo Sato , Tsunehiro Saito , Toshihito Kamioka , Yukio Yoskikawa , Masaaki Yoshikawa
IPC分类号： C03B18/02 , C03B18/18
CPC分类号： C03B18/18
摘要： A direct current magnetic field is applied to a molten metal bath to control the movement of molten metal. A glass ribbon is formed on the molten metal bath to have a predetermined thickness and is moved on the surface of the molten metal bath controlled by the magnetic field, during which the glass ribbon is cooled.

98. 发明授权

US4740505A Pyridazinyloxy (or thio) phenyl phosphates 失效
标题翻译：哒嗪氧基（或硫代）苯基磷酸酯
公开(公告)号：US4740505A
公开(公告)日：1988-04-26
申请号：US829996
申请日：1986-02-18
申请人： Kazuo Kamei , Nobuo Matsumoto , Yasuo Sato
发明人： Kazuo Kamei , Nobuo Matsumoto , Yasuo Sato
IPC分类号： A01N57/16 , C07F9/6509 , C07F9/15
CPC分类号： A01N57/16 , C07F9/650929
摘要： Organic phosphates of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are respectively an alkyl group; R.sup.3 is a phenyl group which is substituted at least by a pyridazinyloxy or pyridazinylthio group in which the pyridazinyl group may be substituted; and X is an oxygen or sulfur atom, or a salt thereof, have marked insecticidal-acaricidal activity against plant pests and mites, household pests, with very low toxicity to warm-blooded animals and fish.
摘要翻译：下式的有机磷酸酯：其中R 1和R 2分别是烷基; R3是至少被哒嗪基氧基或哒嗪基硫基取代的苯基，其中哒嗪基可以被取代; 并且X是氧或硫原子或其盐对植物害虫和螨虫，家庭害虫具有显着的杀虫杀螨活性，对温血动物和鱼具有非常低的毒性。

99. 发明授权

US4621144A 1-phenyl-4-hydroxypyrazole derivatives 失效
标题翻译： 1-苯基-4-羟基吡唑衍生物
公开(公告)号：US4621144A
公开(公告)日：1986-11-04
申请号：US627728
申请日：1984-07-03
申请人： Yoshiyuki Okada , Yasuo Sato
发明人： Yoshiyuki Okada , Yasuo Sato
IPC分类号： A01N57/16 , C07D231/18 , C07F9/6503 , C07F9/6509
CPC分类号： A01N57/16 , C07D231/18 , C07F9/650929
摘要： A compound of the formula: ##STR1## wherein Y is alkyl of 1 to 4 carbon atoms, alkoxy of 1 to 4 carbon atoms, alkylthio of 1 to 4 carbon atoms, a halogen atom, nitro or trifluoromethyl; and n is an integer of 1, 2 or 3; and when n is 2, Y.sub.n may be an alkylidenedioxy group; or a salt thereof. These compounds are useful in producing pyrazol-4-yl phosphates which posess insecticidal-acaricidal activity.
摘要翻译：下式的化合物，其中Y为1至4个碳原子的烷基，1至4个碳原子的烷氧基，1至4个碳原子的烷硫基，卤素原子，硝基或三氟甲基; n为1,2或3的整数; 当n为2时，Yn可以是亚烷基二氧基; 或其盐。这些化合物可用于生产具有杀虫杀螨活性的吡唑-4-基磷酸盐。

100. 发明授权

US4564639A N-(2,6-Difluorobenzoyl-N-'-(2-fluoro-4-halophenyl)urea 失效
标题翻译： N-（2,6-二氟苯甲酰基-N''-（2-氟-4-卤苯基）脲
公开(公告)号：US4564639A
公开(公告)日：1986-01-14
申请号：US471191
申请日：1983-03-01
申请人： Hiroshi Nagase , Yasuo Sato
发明人： Hiroshi Nagase , Yasuo Sato
IPC分类号： A01N47/34 , C07C275/54 , C07C127/22 , A01N47/28
CPC分类号： C07C265/12 , A01N47/34 , C07C275/54
摘要： A urea derivative of the general formula, ##STR1## (wherein X is a halogen), which has higher insecticidal activity than known similar compounds, with lowered toxicity to mammals and fishes. The derivative can be produced by reacting 2-fluoro-4-haloaniline with 2,6-difluorobenzoyl isocyanate or reacting 2-fluoro-4-halo-phenylisocyanate with 2,6-difluorobenzamide.
摘要翻译：具有通式的脲衍生物（其中X是卤素），其具有比已知的相似化合物更高的杀虫活性，对哺乳动物和鱼的毒性降低。该衍生物可以通过2-氟-4-卤代苯胺与2,6-二氟苯甲酰异氰酸酯反应或2-氟-4-卤代苯基异氰酸酯与2,6-二氟苯甲酰胺反应来制备。

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