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91. 发明申请

US20130023664A1 NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND METHOD FOR PRODUCING SAME 有权
标题翻译：含氮杂环化合物及其生产方法
公开(公告)号：US20130023664A1
公开(公告)日：2013-01-24
申请号：US13638700
申请日：2011-03-28
申请人： Koichi Kutose , Hiroki Inoue , Shiro Tsubokura
发明人： Koichi Kutose , Hiroki Inoue , Shiro Tsubokura
IPC分类号： C07D213/75 , C07D213/89
CPC分类号： C07D213/89 , C07D213/75
摘要： There are provided a nitrogen-containing heterocyclic compound such as a substituted amino-pyridine-N-oxide compound represented by formula (1), which is useful as a synthetic intermediate for an agrochemical and the like; and a method for producing the nitrogen-containing heterocyclic compound. (In formula (1), R1 and R2 each represents a hydrogen atom or an unsubstituted or substituted alkyl group; R3 represents a hydrogen atom, an unsubstituted or substituted alkylcarbonyl group or the like; R4 represents an unsubstituted or substituted alkylcarbonyl group, an unsubstituted or substituted arylcarbonyl group or the like; A represents a hydroxyl group, a thiol group or the like; m represents any one of integers of 1 to 4; k represents any one of integers of 0 to 3; and k+m≦4.)
摘要翻译：提供了可用作农药等的合成中间体的含氮杂环化合物，例如由式（1）表示的取代的氨基 - 吡啶-N-氧化物化合物; 和含氮杂环化合物的制造方法。（式（1）中，R 1和R 2各自表示氢原子或未取代或取代的烷基; R 3表示氢原子，未取代或取代的烷基羰基等; R 4表示未取代或取代的烷基羰基，未取代的或取代的芳基羰基等; A表示羟基，硫醇基等; m表示1〜4的整数中的任一个; k表示0〜3的整数中的任一个; k + m＆lt; 1l; 4。）

92. 发明授权

US08339837B2 Driving method of semiconductor device 有权
标题翻译：半导体器件的驱动方法
公开(公告)号：US08339837B2
公开(公告)日：2012-12-25
申请号：US13206547
申请日：2011-08-10
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0433 , G11C11/404
摘要： A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.
摘要翻译：提供具有新颖结构的半导体器件及其驱动方法。一种半导体器件包括：非易失性存储单元，包括包括氧化物半导体的写入晶体管，包括与写入晶体管的半导体材料不同的半导体材料的读取P沟道晶体管，以及电容器。通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及然后关闭写入晶体管，使得节点中保持预定量的电荷。在保持期间，将存储单元置于选择状态，将读取晶体管的源电极和漏电极设定为相同的电位，由此保存存储在节点中的电荷。

93. 发明申请

US20120244307A1 SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：碳化硅基板
公开(公告)号：US20120244307A1
公开(公告)日：2012-09-27
申请号：US13425889
申请日：2012-03-21
申请人： Tsutomu HORI , Shin Harada , Taro Nishiguchi , Makoto Sasaki , Hiroki Inoue , Shinsuke Fujiwara
发明人： Tsutomu HORI , Shin Harada , Taro Nishiguchi , Makoto Sasaki , Hiroki Inoue , Shinsuke Fujiwara
IPC分类号： B32B3/14 , B32B9/00
CPC分类号： H01L29/7802 , C30B29/36 , C30B33/06 , H01L21/0475 , H01L21/2007 , H01L29/0878 , H01L29/1608 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/8083 , H01L29/872 , Y10T428/18 , Y10T428/187
摘要： A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane.
摘要翻译：碳化硅基板包括：直径为70mm以上的基底基板; 以及由单晶碳化硅构成的多个SiC基板，并且在平面图中观察时并排配置在基底基板上。换句话说，多个SiC衬底并排布置在基底衬底的主表面上。此外，每个SiC衬底具有与基底衬底相对的主表面，并且相对于{0001}面具有20°或更小的偏离角。

94. 发明授权

US08173802B2 Method for producing piperidin-4-one derivative 有权
标题翻译：制备哌啶-4-酮衍生物的方法
公开(公告)号：US08173802B2
公开(公告)日：2012-05-08
申请号：US12311315
申请日：2007-10-10
申请人： Hirohito Oooka , Yasushi Shibata , Hiroki Inoue , Tsutomu Imagawa
发明人： Hirohito Oooka , Yasushi Shibata , Hiroki Inoue , Tsutomu Imagawa
IPC分类号： C07D471/08
CPC分类号： C07D221/22 , C07D221/24 , C07D491/113
摘要： Provided is a method for producing a piperidin-4-one derivative useful as an intermediate for agricultural chemicals or pharmaceutical products. A piperidin-4-one derivative represented by formula (III-a) or formula (III-b) is produced by reacting a cyclic bis(aminol)ether compound represented by formula (I) and an acetone derivative represented by formula (II) in the presence of at least one substance selected from the group consisting of protonic acids, Lewis acids, acid halides and dialkyl sulfuric acids.
摘要翻译：提供可用作农药或药品的中间体的哌啶-4-酮衍生物的制造方法。由式（I-a）或式（III-b）表示的哌啶-4-酮衍生物通过式（I）表示的环状双（氨基醇）醚化合物与由式（II）表示的丙酮衍生物反应制备，在至少一种选自质子酸，路易斯酸，酰卤和二烷基硫酸的物质存在下进行。

95. 发明授权

US08134355B2 Semiconductor device and RFID tag using the semiconductor device 有权
标题翻译：使用半导体器件的半导体器件和RFID标签
公开(公告)号：US08134355B2
公开(公告)日：2012-03-13
申请号：US12571938
申请日：2009-10-01
申请人： Hiroki Inoue , Kei Takahashi
发明人： Hiroki Inoue , Kei Takahashi
IPC分类号： G05F3/26 , G05F3/28
CPC分类号： G05F3/24 , G06K19/0701 , G06K19/07749
摘要： A semiconductor device monitors a voltage between a reference potential and an input potential and obtains a constant output potential regardless of a value of the voltage, after the voltage exceeds a predetermined threshold voltage in such a manner that the semiconductor device divides a voltage between the reference potential and the input potential using a plurality of first non-linear elements and at least one linear element to constantly generate a first bias voltage regardless of a value of the voltage, divides a voltage between the reference potential and the input potential using a plurality of second non-linear elements with reference to the first bias voltage to constantly generate a second bias voltage regardless of a value of the voltage, and determines the output potential with reference to the second bias voltage.
摘要翻译：半导体器件监视参考电位和输入电位之间的电压，并且在电压超过预定阈值电压之后，获得恒定的输出电位，而不管电压值如何，使得半导体器件将参考电压使用多个第一非线性元件和至少一个线性元件的电位和输入电位以恒定地产生第一偏置电压而不管电压的值，使用多个第一非线性元件和多个第一非线性元件来分配参考电位和输入电位之间的电压参考第一偏置电压的第二非线性元件，以恒定地产生第二偏置电压，而不管电压的值，并且参考第二偏置电压确定输出电位。

96. 发明申请

US20120033510A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120033510A1
公开(公告)日：2012-02-09
申请号：US13197839
申请日：2011-08-04
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C11/403 , G11C11/4087 , H01L27/11517 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in of state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.
摘要翻译：目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。当使用允许存储单元中包括的晶体管的状态电流充分降低的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。

97. 发明申请

US20120014157A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120014157A1
公开(公告)日：2012-01-19
申请号：US13175090
申请日：2011-07-01
申请人： Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue , Shuhei Nagatsuka
发明人： Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue , Shuhei Nagatsuka
IPC分类号： G11C5/06
CPC分类号： H01L27/1156 , G11C11/404 , G11C16/0441 , H01L27/1207
摘要： A plurality of memory cells included in a memory cell array are divided into a plurality of blocks every plural rows. A common bit line is electrically connected to the divided bit lines through selection transistors in the blocks. One of the memory cells includes a first transistor, a second transistor, and a capacitor. The first transistor includes a first channel formation region. The second transistor includes a second channel formation region. The first channel formation region includes a semiconductor material different from the semiconductor material of the second channel formation region.
摘要翻译：包括在存储单元阵列中的多个存储单元被分成多个块，每个多行。公共位线通过块中的选择晶体管电连接到分割位线。一个存储单元包括第一晶体管，第二晶体管和电容器。第一晶体管包括第一沟道形成区。第二晶体管包括第二沟道形成区域。第一沟道形成区域包括与第二沟道形成区域的半导体材料不同的半导体材料。

98. 发明申请

US20120009761A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 失效
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20120009761A1
公开(公告)日：2012-01-12
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： C30B29/36 , C30B33/06
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译：制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。表面层至少部分去除。在该去除步骤之后，背面和主表面彼此连接。

99. 发明申请

US20110306181A1 METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20110306181A1
公开(公告)日：2011-12-15
申请号：US13202437
申请日：2010-09-28
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： H01L21/762
CPC分类号： H01L29/7802 , C30B29/36 , C30B33/06 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/2007 , H01L29/1608 , H01L29/66068 , H01L29/7813
摘要： A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside.
摘要翻译：制造碳化硅衬底的方法包括以下步骤：制备由碳化硅形成的基底衬底和由单晶碳化硅形成的SiC衬底; 通过堆叠基底基板和SiC基板以使它们的主表面彼此接触来制造堆叠的基板; 加热堆叠的基板以连接基底基板和SiC基板，从而制造接合的基板; 并且加热接合的基板，使得在基底基板和SiC基板之间形成温度差，从而将在基底基板和SiC基板之间的界面处制造接合基板的步骤中形成的空隙排出到外部。

100. 发明申请

US20110275224A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20110275224A1
公开(公告)日：2011-11-10
申请号：US13100527
申请日：2011-05-04
申请人： Shin HARADA , Makoto Sasaki , Hiroki Inoue
发明人： Shin HARADA , Makoto Sasaki , Hiroki Inoue
IPC分类号： H01L21/3105
CPC分类号： H01L29/7802 , B32B38/0008 , B32B38/10 , B32B2313/04 , B32B2457/08 , C30B29/36 , H01L21/02002 , H01L21/187 , H01L29/1608 , H01L29/66068
摘要： A material substrate is prepared which has a first surface and a second surface opposite to each other in a thickness direction and is made of silicon carbide. The material substrate is partially carbonized to divide the material substrate into a carbonized portion made of a material obtained by carbonizing silicon carbide, and a silicon carbide portion made of silicon carbide. This step of partially carbonizing the material substrate is performed to partially carbonize the second surface. In order to adjust a shape of the material substrate when viewed in a planar view, a portion of the material substrate is removed. This step of removing the portion of the material substrate includes the step of processing the carbonized portion. Accordingly, a silicon carbide substrate having a desired planar shape can be obtained readily.
摘要翻译：制备材料基板，其具有在厚度方向上彼此相对的第一表面和第二表面，并且由碳化硅制成。材料基板被部分碳化，以将材料基板分成由碳化碳化碳获得的材料制成的碳化部分和由碳化硅制成的碳化硅部分。进行部分碳化材料基板的步骤以使第二表面部分碳化。为了在平面图中观察时调整材料基板的形状，材料基板的一部分被去除。去除材料基板的该部分的步骤包括处理碳化部分的步骤。因此，可以容易地获得具有期望的平面形状的碳化硅衬底。

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