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    • 92. 发明授权
    • Method of manufacturing Schottky field-effect transistors utilizing
shadow masking
    • 利用阴影掩蔽制造肖特基场效应晶体管的方法
    • US4377899A
    • 1983-03-29
    • US206215
    • 1980-11-12
    • Shunji OtaniKenichi Kikuchi
    • Shunji OtaniKenichi Kikuchi
    • H01L21/338H01L29/812H01L21/302H01L21/441
    • H01L29/66863H01L29/812
    • A method for manufacturing a semiconductor transistor device, specifically a Schottky barrier gate field-effect transistor, having an excellent performance at high frequency due to an exceedingly short gate length. An electrically conductive active layer is formed on a semi-insulating semiconductor substrate. Two adjacent walls are formed on the adjacent layer, are made of resist material, and extended linearly parallel to one another. Ohmic electrode metal is then evaporated obliquely with respect to the vertical surfaces of the two walls to form an ohmic electrode layer on the active layer in areas except for that lying between the two walls. A layer of Schottky barrier metal is then deposited between the two walls, and then the two walls are removed to remove the layers of ohmic electrode metal and Schottky barrier metal on the two walls.
    • 一种用于制造半导体晶体管器件的方法,特别是肖特基势垒栅极场效应晶体管,由于栅极长度非常短,在高频下具有优异的性能。 导电有源层形成在半绝缘半导体衬底上。 两个相邻的壁形成在相邻的层上,由抗蚀剂材料制成并且彼此线性地延伸。 然后,欧姆电极金属相对于两个壁的垂直表面倾斜蒸发,以在位于两个壁之间的区域中的有源层上形成欧姆电极层。 然后在两个壁之间沉积一层肖特基势垒金属,然后移除两个壁以去除两个壁上的欧姆电极金属和肖特基势垒金属层。