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    • 93. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08047442B2
    • 2011-11-01
    • US12275870
    • 2008-11-21
    • Shunpei YamazakiYuugo GotoTsutomu Murakawa
    • Shunpei YamazakiYuugo GotoTsutomu Murakawa
    • G06K19/06
    • H01L27/1218
    • A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.
    • 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下,诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜,其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。
    • 96. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08272575B2
    • 2012-09-25
    • US13280716
    • 2011-10-25
    • Shunpei YamazakiYuugo GotoTsutomu Murakawa
    • Shunpei YamazakiYuugo GotoTsutomu Murakawa
    • G06K19/06
    • H01L27/1218
    • A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.
    • 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下,诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜,其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。
    • 100. 发明授权
    • Electro-optical device
    • 电光装置
    • US06690437B2
    • 2004-02-10
    • US09835693
    • 2001-04-16
    • Shunpei YamazakiYuugo Goto
    • Shunpei YamazakiYuugo Goto
    • G02F11335
    • G02F1/133514G02F1/133512
    • In a conventional liquid crystal display panel using a metallic film as a light shielding mask of a color filter, there arose a problem in that a parasitic capacitor with the other wiring is generated to often cause a delay in signal. Further, there arose a problem in that, if an organic film containing a black pigment is used as the light shielding film of the color filter, the manufacturing step thereof increases. In the present invention, lamination films of colored layers consisting of two layers (lamination film of a red-colored layer and a blue-colored layer, or lamination film of a red-colored layer and a green-colored layer) are formed on an opposing substrate as light shielding portions so as to overlap with TFTs on a device substrate without forming a light-shielding mask (black matrix).
    • 在使用金属膜作为滤色器的遮光掩模的常规液晶显示面板中,存在产生其它布线的寄生电容器经常引起信号延迟的问题。 此外,存在如下问题:如果使用含有黑色颜料的有机膜作为滤色器的遮光膜,则其制造步骤增加。 在本发明中,形成由两层(红色层和蓝色层的层叠膜,红色层和绿色层的层叠膜)构成的着色层的层压膜 相对的基板作为遮光部分,以便在不形成遮光掩模(黑矩阵)的情况下与设备基板上的TFT重叠。