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91. 发明申请

US20100072471A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100072471A1
公开(公告)日：2010-03-25
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI , Tomoya FUTAMURA , Takahiro KASAHARA
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F1/136204 , G02F1/136286 , H01L27/0266 , H01L27/1225 , H01L29/7869
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

92. 发明申请

US20100065838A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100065838A1
公开(公告)日：2010-03-18
申请号：US12553119
申请日：2009-09-03
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Shigeki KOMORI , Hideki UOCHI
IPC分类号： H01L29/24 , H01L29/786 , H01L21/34
CPC分类号： H01L33/0041 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.
摘要翻译：本发明的目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件以及用于制造具有高质量生产率的半导体器件的方法。要点是在栅极绝缘层上形成漏极或源电极层之后形成作为源极或漏极区的低电阻氧化物半导体层，并在其上形成作为半导体层的氧化物半导体膜。优选使用氧 - 过量氧化物半导体层作为半导体层，并且使用缺氧氧化物半导体层作为源极区和漏极区。

93. 发明申请

US20100032667A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100032667A1
公开(公告)日：2010-02-11
申请号：US12535714
申请日：2009-08-05
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78618
摘要： One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.
摘要翻译：本发明的目的之一是提供一种使用含有铟（In），镓（Ga）和锌（Zn））的氧化物半导体膜的薄膜晶体管，其中氧化物半导体层和源极之间的接触电阻并且减少了漏电极，并且提供了制造薄膜晶体管的方法。通过有意地提供具有比IGZO半导体层和源极和漏极电极层之间的IGZO半导体层更高的载流子浓度的缓冲层来形成欧姆接触。

94. 发明申请

US20090269870A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：发光元件，发光元件和半导体器件
公开(公告)号：US20090269870A1
公开(公告)日：2009-10-29
申请号：US12486785
申请日：2009-06-18
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO
IPC分类号： H01L33/00 , H01L21/283
CPC分类号： H01L51/5206 , H01L27/3244 , H01L51/0037 , H01L51/0052 , H01L51/007 , H01L51/0071 , H01L51/0077 , H01L51/0081 , H01L51/5048
摘要： It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.
摘要翻译：本发明的目的是提供一种半导体器件，特别是可以容易地以湿法制造的发光元件。本发明的一个特征是包括晶体管和发光元件的发光器件。在发光元件中，在第一电极上顺序地形成有机层，发光层和第二电极，并且晶体管通过布线电连接到发光元件。这里，布线包含铝，碳和钛。有机层通过湿法形成。与有机层接触的第一电极由含氧化钛的氧化铟锡形成。

95. 发明申请

US20090224252A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090224252A1
公开(公告)日：2009-09-10
申请号：US12436875
申请日：2009-05-07
申请人： Kengo AKIMOTO
发明人： Kengo AKIMOTO
IPC分类号： H01L29/786
CPC分类号： H01L27/12 , H01L27/105 , H01L27/11293 , H01L27/1214 , H01L27/1266
摘要： The semiconductor device includes a thin film transistor; a first interlayer insulating film over the thin film transistor; a first electrode electrically connected to one of a source region and a drain region, over the first interlayer insulating film; a second electrode electrically connected to the other of the source region and the drain region; a second interlayer insulating film formed over the first interlayer insulating film, the first electrode, and the second electrode; a first wiring electrically connected to one of the first electrode and the second electrode, on the second interlayer insulating film; and a second wiring not electrically connected to the other of the first electrode and the second electrode, on the second interlayer insulating film; in which the second wiring is not electrically connected to the other of the first electrode and the second electrode by a separation region formed in the second interlayer insulating film.
摘要翻译：半导体器件包括薄膜晶体管; 薄膜晶体管上的第一层间绝缘膜; 在所述第一层间绝缘膜上方电连接到源区和漏区之一的第一电极; 电源地连接到所述源极区域和所述漏极区域中的另一个的第二电极; 形成在第一层间绝缘膜，第一电极和第二电极上的第二层间绝缘膜; 在第二层间绝缘膜上电连接到第一电极和第二电极之一的第一布线; 以及在所述第二层间绝缘膜上不与所述第一电极和所述第二电极中的另一个电连接的第二布线; 其中第二布线不通过形成在第二层间绝缘膜中的分离区域而电连接到第一电极和第二电极中的另一个。

96. 发明申请

US20090189156A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090189156A1
公开(公告)日：2009-07-30
申请号：US12417682
申请日：2009-04-03
申请人： Kengo AKIMOTO
发明人： Kengo AKIMOTO
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1225 , H01L27/1255 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/78621
摘要： To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
摘要翻译：为了提供其中不产生缺陷或故障的半导体器件及其制造方法，即使使用ZnO半导体膜，并且将添加有n型或p型杂质的ZnO膜用于源电极和漏电极。半导体器件包括通过栅极绝缘膜上的栅电极，Al膜或Al合金膜上的氧化硅膜或氮氧化硅膜形成的栅极绝缘膜，n型或p型的ZnO膜在Al膜或Al合金膜上添加型杂质，在添加有n型或p型杂质的ZnO膜上的ZnO半导体膜和栅极绝缘膜。

97. 发明申请

US20120280230A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120280230A1
公开(公告)日：2012-11-08
申请号：US13552805
申请日：2012-07-19
申请人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Junichiro SAKATA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.
摘要翻译：本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏电极上方形成与所述氧化物半导体膜接触的绝缘膜。

98. 发明申请

US20120261671A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20120261671A1
公开(公告)日：2012-10-18
申请号：US13537408
申请日：2012-06-29
申请人： Kengo AKIMOTO , Hisashi Ohtani , Misako Hirosue
发明人： Kengo AKIMOTO , Hisashi Ohtani , Misako Hirosue
IPC分类号： H01L29/786
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

99. 发明申请

US20120108007A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120108007A1
公开(公告)日：2012-05-03
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L21/336
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
摘要翻译：本发明的目的是提供一种包括具有良好的电性能和高可靠性的薄膜晶体管的半导体器件，以及一种以高生产率制造半导体器件的方法。在倒置交错（底栅极）薄膜晶体管中，使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且在半导体层和源之间设置使用金属氧化物层形成的缓冲层，漏电极层。有意地提供金属氧化物层作为半导体层与源极和漏极电极层之间的缓冲层，从而获得欧姆接触。

100. 发明申请

US20120058612A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120058612A1
公开(公告)日：2012-03-08
申请号：US13278654
申请日：2011-10-21
申请人： Kengo AKIMOTO
发明人： Kengo AKIMOTO
IPC分类号： H01L21/336 , H01L21/02
CPC分类号： H01L27/1266 , H01L27/1255 , H01L29/04 , H01L29/78654
摘要： In the method for manufacturing a semiconductor device of the invention, a bonding layer is formed over a substrate, an insulating film and a storage capacitor portion lower electrode are formed over the bonding layer, a single crystal silicon layer is formed over the insulating film, a storage capacitor portion insulating film is formed over the storage capacitor portion lower electrode, a wiring is formed over the storage capacitor portion insulating film, a channel forming region and a low concentration impurity region are formed over the single crystal silicon layer, and a gate insulating film and a gate electrode are formed over the single crystal silicon layer. The storage capacitor portion insulating film is formed by depositing a YSZ film with a single crystal silicon layer used as a base film, whereby the permittivity increases and thus the leakage current from the storage capacitor portion is suppressed.
摘要翻译：在本发明的半导体装置的制造方法中，在基板上形成接合层，在接合层上形成绝缘膜和辅助电容部下部电极，在绝缘膜上形成单晶硅层，在保持电容器部分下电极上形成存储电容器部分绝缘膜，在单晶硅层上方形成有在辅助电容部分绝缘膜上的布线，沟道形成区和低浓度杂质区，绝缘膜和栅电极形成在单晶硅层上。存储电容器部分绝缘膜通过沉积具有用作基膜的单晶硅层的YSZ膜形成，从而电容率增加，从而抑制了来自存储电容器部分的漏电流。

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