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    • 92. 发明授权
    • Swing arm suspension
    • 摆臂悬挂
    • US07559566B2
    • 2009-07-14
    • US10933395
    • 2004-09-03
    • Masayuki Fujita
    • Masayuki Fujita
    • B62K1/00B62K3/00B62K5/00B62K15/00
    • B62K25/283B62K25/286
    • A swing arm suspension for reducing the number of parts to thereby reduce the number of man-hours for assembly, the weight and the cost. The swing arm suspension includes a pivot plate provided with a pivot shaft, a swing arm having a rear end portion supporting a rear wheel that is swingably mounted at a front end portion to the pivot shaft and a shock absorber that is mounted at an upper end portion to the swing arm and connected at a lower end portion through a link mechanism to a portion of the pivot plate at a lower level than the pivot shaft. An exposing portion is provided for exposing a shock absorber arrangement space to an upper space above the swing arm. At least one of a subtank and an adjuster as functional components of the shock absorber is located in the exposing portion.
    • 用于减少部件数量的摆臂悬架,从而减少组装工时数,重量和成本。 摆臂悬架包括设置有枢转轴的枢转板,摆臂,其具有支撑后轮的后端部,该后轮可摆动地安装在枢轴的前端部;以及减震器,其安装在上端 部分到摆臂,并且在下端部处通过连杆机构连接到枢转板的比枢轴更低水平的部分。 设置暴露部分,用于将减震器布置空间暴露于摆臂上方的上部空间。 作为减震器的功能部件的子容器和调节器中的至少一个位于曝光部中。
    • 95. 发明授权
    • Disk brake
    • 盘式制动器
    • US07407043B2
    • 2008-08-05
    • US10934410
    • 2004-09-07
    • Masayuki FujitaKoushi NakamuraHidetoshi Toyoda
    • Masayuki FujitaKoushi NakamuraHidetoshi Toyoda
    • F16D55/00B60T1/06
    • F16D55/228F16D55/025F16D2055/0012F16D2055/0016
    • A front disk brake includes a brake caliper having a pair of caliper side mount portions, and a caliper bracket having a pair of bracket side mount portions. The brake caliper includes an oblong-shared lower-side counterbore and a circular-shaped upper-side counterbore, the lower-side counterbore being oblong sectional shaped in the arrangement direction of the lower-side counterbore and the upper-side counterbore paired therewith. The caliper bracket includes lower-side and upper side circular-shaped counterbores which are opposed, respectively, to the counterbores of the brake caliper. The brake caliper is fixed to the caliper bracket by mounting fastening bolts in bolt passing holes and screw holes formed respectively in the mount portions. The bolt passing holes and the screw holes are provided at their portions on the sides of opposed surfaces with counterbores in which collar members are to be fitted.
    • 前盘式制动器包括具有一对卡钳侧安装部的制动钳和具有一对支架侧安装部的卡钳支架。 制动钳包括长圆形的下侧沉孔和圆形的上侧沉孔,下侧沉孔是沿下侧沉孔和上侧沉孔配对的长方形截面形状。 卡钳支架包括分别与制动钳的沉孔相对的下侧和上侧的圆形沉孔。 通过将紧固螺栓安装在分别安装在安装部分中的螺栓通孔和螺孔中,将制动钳固定在卡钳支架上。 螺栓通孔和螺孔在其相对表面的侧面上设置有其中将安装套环构件的沉孔。
    • 96. 发明申请
    • Surface Modification Method for Solid Sample, Impurity Activation Method, and Method for Manufacturing Semiconductor Device
    • 固体样品的表面改性方法,杂质激活方法和制造半导体器件的方法
    • US20070293056A1
    • 2007-12-20
    • US11587815
    • 2005-04-28
    • Yuichi SetsuharaMasaki HashidaMasayuki Fujita
    • Yuichi SetsuharaMasaki HashidaMasayuki Fujita
    • H01L21/265H01L21/268
    • H01L21/02686H01L21/2026H01L21/26586H01L21/268H01L29/6659H01L29/66636H01L29/7833
    • The present invention intends to provide a method for manufacturing a semiconductor device in which source/drain extension regions having a uniform depth are created with high reproducibility. This objective is achieved by the following method: A gate electrode 24 is formed on a semiconductor substrate 21 via a gate insulator 23. The portion of the semiconductor substrate 21 other than the gate electrode 24 is irradiated with an ultra-short pulsed laser light having a pulse width within a range from 10 to 1000 femtoseconds in order to create an amorphous layer 26a. Then, recesses 27 are created in the semiconductor substrate 21 by selectively etching the amorphous layer 26a. The recesses 27 are filled with semiconductor layers 28 whose impurity concentration is higher than that of the semiconductor substrate 21, and the source/drain extension regions 31 are created there. Within the region other than the gate electrode 24 and the source/drain extension regions 31, Deep diffusion layers 30 deeper than the source/drain extension regions 31 are created.
    • 本发明旨在提供一种制造半导体器件的方法,其中以高再现性产生具有均匀深度的源极/漏极延伸区域。 该目的通过以下方法实现:栅电极24经由栅极绝缘体23形成在半导体衬底21上。 为了形成非晶层26a,用脉冲宽度为10〜1000飞秒的超短脉冲激光照射半导体基板21以外的栅电极24的部分。 然后,通过选择性地蚀刻非晶层26a,在半导体衬底21中形成凹部27。 凹部27填充有杂质浓度高于半导体衬底21的半导体层28,并且在其上形成源极/漏极延伸区域31。 在栅电极24和源极/漏极延伸区域31之外的区域内,产生深度比源极/漏极延伸区域31深的扩散层30。