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91. 发明申请

US20140064314A1 Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers 有权
标题翻译：在半导体层中具有组成和掺杂不均匀性的发射器件
公开(公告)号：US20140064314A1
公开(公告)日：2014-03-06
申请号：US13572446
申请日：2012-08-10
申请人： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
发明人： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
IPC分类号： H01L29/15 , H01L21/02 , H01S5/34 , H01L33/06
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译：提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。该层可以包括短期超晶格，其包括与井交替的障碍物。在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

92. 发明授权

US08643430B2 Device and circuit with improved linearity 有权
标题翻译：器件和电路具有提高的线性度
公开(公告)号：US08643430B2
公开(公告)日：2014-02-04
申请号：US13311633
申请日：2011-12-06
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H03B1/00
CPC分类号： H03H5/12
摘要： A solution for compensating intermodulation distortion of a component is provided. A circuit element includes multiple connected components. At least two of the connected components comprise current-voltage characteristics of opposite signs (e.g., sublinear and superlinear current-voltage characteristics) such that the current-voltage characteristics of the circuit element produces a level of intermodulation distortion for the circuit element lower than a level of intermodulation distortion for each of the connected components.
摘要翻译：提供了用于补偿组件的互调失真的解决方案。电路元件包括多个连接的部件。连接的组件中的至少两个包括具有相反符号的电流 - 电压特性（例如，亚线性和超级线性电流 - 电压特性），使得电路元件的电流 - 电压特性产生电路元件的互调失真水平低于每个连接组件的互调失真水平。

93. 发明授权

US08633468B2 Light emitting device with dislocation bending structure 有权
标题翻译：具有位错弯曲结构的发光器件
公开(公告)号：US08633468B2
公开(公告)日：2014-01-21
申请号：US13370470
申请日：2012-02-10
申请人： Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/025 , H01L33/12 , H01S2301/173
摘要： A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers.
摘要翻译：提供了用于减少发射装置的有源区域中的多个位错的解决方案。位错弯曲结构可以包括在衬底和有源区域之间的发射器件中。位错弯曲结构可以被配置为在到达活性区域之前导致位错弯曲和/或湮灭，例如由于存在足够量的应变。位错弯曲结构可以包括多个层，其中相邻层由材料组成，但是相应材料中的元素的摩尔分数在两层之间不同。位错弯曲结构可以包括至少四十对相邻层之间相邻层之间具有至少百分之五的摩尔分数的相邻层。

94. 发明授权

US08587028B2 Gateless switch with capacitively-coupled contacts 有权
标题翻译：无电容开关，具有电容耦合触点
公开(公告)号：US08587028B2
公开(公告)日：2013-11-19
申请号：US12651470
申请日：2010-01-03
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/66
CPC分类号： H01L29/772 , H01H59/0009 , H01H2001/0078 , H01L23/66 , H01L27/0605 , H01L29/0692 , H01L29/2003 , H01L29/8605 , H01L2223/6627 , H01L2924/0002 , H01L2924/12044 , H01L2924/19032 , H01L2924/19051 , H01L2924/3011 , H01P1/15 , H01L2924/00
摘要： A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.
摘要翻译：开关包括输入触点和与导电通道的输出触点。输入和输出触点中的至少一个电容耦合到导电沟道。控制触点位于输入和输出触点之间的区域之外，可用于在开关状态之间调整开关。该开关可以实现为电路中的射频开关。

95. 发明授权

US08461631B2 Composite contact for semiconductor device 有权
标题翻译：半导体器件的复合接点
公开(公告)号：US08461631B2
公开(公告)日：2013-06-11
申请号：US11781302
申请日：2007-07-23
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L21/336
CPC分类号： H01L29/41708 , H01L29/402 , H01L29/417 , H01L29/4175 , H01L29/41775 , H01L29/42316 , H01L29/732 , H01L29/812 , H01L29/861 , H01L29/872
摘要： A composite contact for a semiconductor device is provided. The composite contact includes a DC conducting electrode that is attached to a semiconductor layer in the device, and a capacitive electrode that is partially over the DC conducting electrode and extends beyond the DC conducting electrode. The composite contact provides a combined resistive-capacitive coupling to the semiconductor layer. As a result, a contact impedance is reduced when the corresponding semiconductor device is operated at high frequencies.
摘要翻译：提供了一种用于半导体器件的复合触点。复合触点包括附接到器件中的半导体层的直流导电电极和部分地在直流导电电极上并延伸超过直流导电电极的电容电极。复合触点提供与半导体层的组合的电阻 - 电容耦合。结果，当对应的半导体器件以高频率操作时，接触阻抗减小。

96. 发明授权

US08395392B2 Parameter extraction using radio frequency signals 有权
标题翻译：使用射频信号进行参数提取
公开(公告)号：US08395392B2
公开(公告)日：2013-03-12
申请号：US12646121
申请日：2009-12-23
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： G01R31/08 , G01R27/00 , G01R27/04
CPC分类号： G01R31/2648
摘要： A set of parameters of an evaluation structure are extracted by applying a radio frequency (RF) signal through a first capacitive contact and a second capacitive contact to the evaluation structure. Measurement data corresponding to an impedance of the evaluation structure is acquired while the RF signal is applied, and the set of parameters are extracted from the measurement data. In an embodiment, multiple pairs of capacitive contacts can be utilized to acquire measurement data. Each pair of capacitive contacts can be separated by a channel having a unique spacing.
摘要翻译：通过将第一电容接触和第二电容接触施加射频（RF）信号给评估结构来提取评估结构的一组参数。在施加RF信号的同时获取与评价结构的阻抗对应的测量数据，并从测量数据中提取参数组。在一个实施例中，可以使用多对电容性触点来获取测量数据。每对电容性触点可以由具有唯一间隔的通道分开。

97. 发明申请

US20120205619A1 Light Emitting Device with Dislocation Bending Structure 有权
标题翻译：具有位错弯曲结构的发光装置
公开(公告)号：US20120205619A1
公开(公告)日：2012-08-16
申请号：US13370470
申请日：2012-02-10
申请人： Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/025 , H01L33/12 , H01S2301/173
摘要： A solution for reducing a number of dislocations in an active region of an emitting device is provided. A dislocation bending structure can be included in the emitting device between the substrate and the active region. The dislocation bending structure can be configured to cause dislocations to bend and/or annihilate prior to reaching the active region, e.g., due to the presence of a sufficient amount of strain. The dislocation bending structure can include a plurality of layers with adjacent layers being composed of a material, but with molar fractions of an element in the respective material differing between the two layers. The dislocation bending structure can include at least forty pairs of adjacent layers having molar fractions of an element differing by at least five percent between the adjacent layers.
摘要翻译：提供了用于减少发射装置的有源区域中的多个位错的解决方案。位错弯曲结构可以包括在衬底和有源区域之间的发射器件中。位错弯曲结构可以被配置为在到达活性区域之前导致位错弯曲和/或湮灭，例如由于存在足够量的应变。位错弯曲结构可以包括多个层，其中相邻层由材料组成，但是相应材料中的元素的摩尔分数在两层之间不同。位错弯曲结构可以包括至少四十对相邻层之间相邻层之间具有至少百分之五的摩尔分数的相邻层。

98. 发明申请

US20110253975A1 Semiconductor Material Doping 有权
标题翻译：半导体材料掺杂
公开(公告)号：US20110253975A1
公开(公告)日：2011-10-20
申请号：US13162908
申请日：2011-06-17
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： H01L33/04
CPC分类号： H01L29/122 , B82Y10/00 , B82Y20/00 , H01L29/2003 , H01L29/201 , H01L33/04 , H01L33/32 , H01S5/2009 , H01S5/3216 , H01S5/34333
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
摘要翻译：提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致量子阱。另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

99. 发明授权

US07928451B2 Shaped contact layer for light emitting heterostructure 有权
标题翻译：用于发光异质结构的成形接触层
公开(公告)号：US07928451B2
公开(公告)日：2011-04-19
申请号：US11626999
申请日：2007-01-25
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01S5/0425
摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
摘要翻译：提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。使用这些形状可以为发光器件提供一个或多个改进的操作特性。接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

100. 发明授权

US07868399B2 Semiconductor sensing device 有权
标题翻译：半导体感测装置
公开(公告)号：US07868399B2
公开(公告)日：2011-01-11
申请号：US12106597
申请日：2008-04-21
申请人： Michael Shur , Remigijus Gaska , Yuriy Bilenko
发明人： Michael Shur , Remigijus Gaska , Yuriy Bilenko
IPC分类号： H01L23/58
CPC分类号： G01N27/414 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.
摘要翻译：一种半导体感测装置，其中感测层暴露于在接触件下方和/或邻近的区域内被测试的介质。在一个实施例中，该器件包括场效应晶体管，其中感测层设置在栅极触点下方。感测层通过包括在栅极接触中的一个或多个穿孔和/或设置在感测层上方的一个或多个层而暴露于介质。感测层可以包括电介质层，半导体层等。

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