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    • 92. 发明授权
    • Oscillator circuit with suppression of voltage transients
    • 具有抑制电压瞬变的振荡电路
    • US5430414A
    • 1995-07-04
    • US34931
    • 1993-03-19
    • Adrianus SempelJohannes Van Nieuwenburg
    • Adrianus SempelJohannes Van Nieuwenburg
    • H03B5/12H03K3/0231H03K3/282H03K4/50
    • H03K3/2821H03K3/0231
    • An electric circuit including a local oscillator circuit and which is adapted to prevent voltage transients. The oscillator circuit comprises two voltage sources which are alternately connected to respective electrodes of a capacitor. The capacitor electrodes are also connected, via respective load circuits, to a common reference node of the voltage sources. Thus, the respective voltage sources alternately generate mutually opposed currents in the capacitor, which currents charge and discharge the capacitor 20 to threshold levels, after which a switching control circuit interchanges the coupling of the voltage sources. In order to prevent a transient in the voltage level at the first capacitor electrode upon switching, a voltage control circuit provides a voltage difference between the voltages supplied by the voltage sources, which voltage difference corresponds to the charge voltage built up across the capacitor.
    • 一种包括本地振荡器电路并且适于防止电压瞬变的电路。 振荡器电路包括交替地连接到电容器的各个电极的两个电压源。 电容器电极也经由相应的负载电路连接到电压源的公共参考节点。 因此,各个电压源在电容器中交替地产生相互相反的电流,电流将电容器20充电和放电至阈值电平,之后开关控制电路交换电压源的耦合。 为了防止在切换时在第一电容器电极处的电压电平的瞬态,电压控制电路提供由电压源提供的电压之间的电压差,该电压差对应于在电容器两端积聚的充电电压。
    • 93. 发明授权
    • Tunable device
    • 可调谐设备
    • US5408196A
    • 1995-04-18
    • US213775
    • 1994-03-16
    • Adrianus SempelJohannes Van Nieuwenburg
    • Adrianus SempelJohannes Van Nieuwenburg
    • H03J3/00H03D3/24H03J1/00H03J5/00H04N5/50H03D3/00H03L1/00H03L7/00H03L7/20
    • H03D3/241H03J1/005H03J2200/28
    • A signal receiving device is kept tuned by a tuning signal, which supplied to a tuning input of a tunable circuit in the signal receiving device. The tuning signal is supplied from a memory. The signal receiving device has an operating state and a calibrating state. The calibrating state serves to determine the tuning signal and to store it in the memory. In the calibrating state, a broadband signal source supplies a broadband signal to a band-pass filter. The band-pass filter is tuned to and passes a reference signal to the tunable circuit which provides the signal receiving device with selectivity in the operating state. The response of the tunable circuit to the reference signal is monitored and a tuning signal is selected for which it is measured that the tunable circuit is tuned to the reference signal which is passed by the band-pass filter.
    • 信号接收装置通过调谐信号保持调谐,该调谐信号提供给信号接收装置中的可调谐电路的调谐输入。 调谐信号由存储器提供。 信号接收装置具有操作状态和校正状态。 校准状态用于确定调谐信号并将其存储在存储器中。 在校准状态下,宽带信号源向带通滤波器提供宽带信号。 带通滤波器被调谐到参考信号并将其传给可调谐电路,该可调谐电路在操作状态下提供信号接收装置的选择性。 监测可调电路对参考信号的响应,并且选择调谐信号,调谐信号被调谐到调谐电路被带通滤波器通过的参考信号。
    • 95. 发明授权
    • MOS Field-effect capacitor
    • MOS场效应电容
    • US4453090A
    • 1984-06-05
    • US272459
    • 1981-06-11
    • Adrianus Sempel
    • Adrianus Sempel
    • H01L27/04H01L21/822H01L27/08H01L27/092H01L29/94H01L29/78
    • H01L27/0805H01L27/092H01L29/94
    • A field-effect capacitance includes a first region of a first conductivity type in a semiconductor layer, which region is provided with at least one contact electrode connected to a first terminal and with an insulated electrode arranged on said region and connected to a second terminal. A second semiconductor region of a second conductivity type opposite to the first conductivity type is formed in the semiconductor layer, which second region is provided with at least one contact electrode coupled to the first terminal, and with an insulated electrode arranged on said second region and connected to the second terminal. The two capacitances thus formed are then alternately operative for alternate polarities of the signal voltage. The resulting capacitance structure is suitable for high signal voltage applications, and provides a smooth transition when alternate signal polarities are applied.
    • 场效应电容包括在半导体层中的第一导电类型的第一区域,该区域设置有连接到第一端子的至少一个接触电极和布置在所述区域上并连接到第二端子的绝缘电极。 在半导体层中形成与第一导电类型相反的第二导电类型的第二半导体区域,该第二区域设置有耦合到第一端子的至少一个接触电极,以及布置在所述第二区域上的绝缘电极, 连接到第二个终端。 这样形成的两个电容然后交替地操作用于信号电压的交替极性。 所得到的电容结构适用于高信号电压应用,并且当应用交替信号极性时提供平滑过渡。