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91. 发明授权

US07307002B2 Non-critical complementary masking method for poly-1 definition in flash memory device fabrication 有权
标题翻译：闪存器件制造中poly-1定义的非关键互补掩模方法
公开(公告)号：US07307002B2
公开(公告)日：2007-12-11
申请号：US11099339
申请日：2005-04-04
申请人： Unsoon Kim , Hiroyuki Kinoshita , Yu Sun , Krishnashree Achuthan , Christopher H. Raeder , Christopher M. Foster , Harpreet Kaur Sachar , Kashmir Singh Sahota
发明人： Unsoon Kim , Hiroyuki Kinoshita , Yu Sun , Krishnashree Achuthan , Christopher H. Raeder , Christopher M. Foster , Harpreet Kaur Sachar , Kashmir Singh Sahota
IPC分类号： H01L21/76
CPC分类号： H01L27/105 , H01L21/3212 , H01L21/32139 , H01L21/76229 , H01L27/1052 , H01L27/11526 , H01L27/11543 , H01L27/11568
摘要： A method is disclosed for the definition of the poly-1 layer in a semiconductor wafer. A non-critical mask is used to recess field oxides in the periphery prior to poly-1 deposition by an amount equal to the final poly-1 thickness. A complimentary non-critical mask is used to permit CMP of the core to expose the tops of core oxide mesas from the shallow isolation trenches.
摘要翻译：公开了一种用于在半导体晶片中定义多晶硅层的方法。使用非临界掩模在聚-1沉积之前将外围的场氧化物凹入等于最终聚-1厚度的量。使用互补的非关键掩模来允许芯的CMP将浅层隔离沟的核心氧化物台面的顶部暴露出来。

92. 发明申请

US20070106653A1 Search engine 审中-公开
标题翻译：搜索引擎
公开(公告)号：US20070106653A1
公开(公告)日：2007-05-10
申请号：US11581213
申请日：2006-10-12
申请人： Yu Sun
发明人： Yu Sun
IPC分类号： G06F17/30
CPC分类号： G06F16/951
摘要： A method implemented with a machine, the machine, and the method for using the machine, and products produced thereby, the method including a computer system arranged to allow a user to input search phrases and/or words in one language and the system translates the phrases and/or words into one or several user-specified languages and then presents search results from a multi-language search to the user.
摘要翻译：一种使用机器，机器和使用机器的方法以及由此产生的产品实现的方法，所述方法包括计算机系统，其被布置为允许用户以一种语言输入搜索短语和/或单词，并且系统将翻译短语和/或单词组合成一个或几个用户指定的语言，然后将来自多语言搜索的搜索结果呈现给用户。

93. 发明授权

US07215499B1 Multi-stage actuator disk drive and methods for controlling a transducer with settle-switching state dependent feed-forward control 有权
标题翻译：多级致动器盘驱动器和用于控制具有稳定开关状态相关前馈控制的换能器的方法
公开(公告)号：US07215499B1
公开(公告)日：2007-05-08
申请号：US11180283
申请日：2005-07-13
申请人： Yunfeng Li , Yu Sun , Lin Guo , Xiaoping Hu
发明人： Yunfeng Li , Yu Sun , Lin Guo , Xiaoping Hu
IPC分类号： G11B21/02
CPC分类号： G11B5/5547 , G11B5/5552
摘要： A disk drive and method are provided for controlling seeking of a transducer that is adjacent to a rotatable data storage disk in a disk drive. The disk drive includes an actuator for positioning the transducer relative to the disk, the method comprising. The actuator is controlled to move the transducer toward a target track on the disk during an initial phase of a seek mode during which the transducer is primarily accelerated toward the target track. During a settle phase of the seek mode which follows the initial phase the actuator is controlled to settle the transducer onto the target track. An initial position, an initial velocity, and an initial acceleration of the transducer are determined at a phase switch time at about when control of the actuator switches from the initial phase to the settle phase of the seek mode. Feed-forward control information is generated based on the determined initial position, initial velocity, and initial acceleration of the transducer. The actuator is controlled responsive to the feed-forward control information to settle the transducer onto the target track during the settle phase of the seek mode.
摘要翻译：提供了一种磁盘驱动器和方法，用于控制寻找与磁盘驱动器中的可旋转数据存储盘相邻的换能器。磁盘驱动器包括用于相对于盘定位换能器的致动器，该方法包括。在寻像模式的初始阶段期间，致动器被控制以将传感器移向盘上的目标轨道，在该模式期间，换能器主要朝向目标轨道加速。在跟随初始阶段的搜索模式的稳定阶段期间，致动器被控制以将换能器定位到目标轨道上。在致动器的控制从寻找模式的初始阶段到稳定阶段切换的时刻，在相位切换时刻确定换能器的初始位置，初始速度和初始加速度。基于确定的换能器的初始位置，初始速度和初始加速度产生前馈控制信息。响应于前馈控制信息控制致动器，以在搜索模式的稳定阶段期间将换能器稳定在目标轨道上。

94. 发明授权

US07202540B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07202540B2
公开(公告)日：2007-04-10
申请号：US11066567
申请日：2005-02-28
申请人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
发明人： Hideki Komori , Hisayuki Shimada , Yu Sun , Hiroyuki Kinoshita
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11521 , H01L21/823425 , H01L21/823468 , H01L27/115 , H01L27/11568 , Y10S257/90
摘要： A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).
摘要翻译：漏极（7）包括与控制栅极（5）对准的轻掺杂浅杂质区域（7a）和与侧壁膜（8）对准并掺杂杂质的重掺杂深杂质区域（7b）其浓度高于轻掺杂浅杂质区（7a）的浓度。轻掺杂的浅杂质区域（7a）导致短沟道效应和编程效率的改善。漏极接触孔形成部分（70）设置到重掺杂杂质区域（7b）以降低漏极（7）处的接触电阻。

95. 发明授权

US07116513B1 Positioning transducers based on a compensation scheme that varies based on transducer vibrational state 有权
标题翻译：基于基于传感器振动状态变化的补偿方案来定位换能器
公开(公告)号：US07116513B1
公开(公告)日：2006-10-03
申请号：US10999552
申请日：2004-11-30
申请人： Yu Sun , Lin Guo , Xiaoping Hu
发明人： Yu Sun , Lin Guo , Xiaoping Hu
IPC分类号： G11B5/596
CPC分类号： G11B5/5582 , G11B19/04
摘要： A disk drive includes a transducer and a rotatable disk, which includes a plurality of tracks. A vibration state of the transducer relative to the disk is determined. The transducer is positioned relative one of the tracks based on a compensation scheme that varies based on the determination of the vibration state. The compensation scheme may be varied by selecting among output of two or more compensators, based on the determined of the vibration state of the transducer, to control positioning of the transducer. The compensation scheme may alternatively, or additionally, be varied by varying a contribution from a vibration state actuator compensator to the control of positioning of the transducer. The vibration state actuator compensator is configured to improve transducer track following while the transducer is subjected to vibration.
摘要翻译：磁盘驱动器包括换能器和可旋转盘，其包括多个轨道。确定换能器相对于盘的振动状态。基于基于振动状态的确定而变化的补偿方案，换能器相对于轨道定位。可以通过基于确定的换能器的振动状态来选择两个或多个补偿器的输出来改变补偿方案，以控制换能器的定位。可以通过改变从振动状态致动器补偿器对转换器的定位的控制的贡献来替代或另外地改变补偿方案。振动状态致动器补偿器配置成在传感器经受振动时改善传感器轨迹跟随。

96. 发明授权

US07019366B1 Electrostatic discharge performance of a silicon structure and efficient use of area with electrostatic discharge protective device under the pad approach and adjustment of via configuration thereto to control drain junction resistance 有权
标题翻译：硅结构的静电放电性能，有效利用垫下方的静电放电保护装置的面积，调整通孔配置，以控制漏极结电阻
公开(公告)号：US07019366B1
公开(公告)日：2006-03-28
申请号：US10758173
申请日：2004-01-14
申请人： Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun
发明人： Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun
IPC分类号： H01L23/62
CPC分类号： H01L27/0251
摘要： More efficient use of silicon area is achieved by incorporating an electrostatic discharge protective (ESDP) device beneath a pad area of a semiconductor structure. The pad area includes a substrate having a first metal layer above it. A second metal layer is above the first metal layer. The ESDP device resides in the substrate below the first metal layer. A layer of dielectric separates the first and second metal layers. A via within the dielectric layer electrically couples the first and second metal layers. A via connects to the ESDP component. Subsequent metal layers can be arranged between the first and second metal layers. The Ohmic value of the resistance component of the ESDP device can be set during fabrication by fixing a number of individual via components, arranged electrically in parallel, by fixing the cross sectional area of the via components, and/or by fixing the length of the via components.
摘要翻译：通过在半导体结构的焊盘区域的下方并入静电放电保护（ESDP）器件来实现硅面积的更有效的使用。焊盘区域包括在其上方具有第一金属层的基板。第二金属层位于第一金属层之上。 ESDP设备位于第一金属层下方的基板中。电介质层分离第一和第二金属层。电介质层内的通孔电耦合第一和第二金属层。 A通道连接到ESDP组件。随后的金属层可以布置在第一和第二金属层之间。 ESDP装置的电阻部件的欧姆值可以在制造期间通过固定多个单独的通孔部件，通过固定通孔部件的横截面面积和/或固定长度通过组件。

97. 发明授权

US06960693B2 Oxidation reaction process catalyzed by phase-transfer catalyst controlling reaction 有权
标题翻译：通过相转移催化剂控制反应催化氧化反应过程
公开(公告)号：US06960693B2
公开(公告)日：2005-11-01
申请号：US10432874
申请日：2001-11-29
申请人： Zuwei Xi , Yu Sun , Kunlan Li , Ning Zhou
发明人： Zuwei Xi , Yu Sun , Kunlan Li , Ning Zhou
IPC分类号： C07D333/32 , B01J27/186 , B01J31/00 , B01J31/02 , C07B33/00 , C07B61/00 , C07C29/48 , C07C35/08 , C07C45/28 , C07C45/29 , C07C47/228 , C07C49/04 , C07C49/10 , C07C49/403 , C07C49/78 , C07C49/825 , C07C51/285 , C07C51/31 , C07C55/14 , C07C59/185 , C07C67/42 , C07C69/12 , C07C315/02 , C07C317/04 , C07C317/14 , C07D301/06 , C07D301/12 , C07D303/04 , C07D309/30 , C07C321/00 , C07C45/00 , C07D313/00 , C07F15/00
CPC分类号： B01J27/186 , B01J31/006 , B01J31/0208 , B01J31/0239 , B01J31/0244 , B01J31/1815 , B01J31/2243 , B01J2531/64 , B01J2531/66 , B01J2531/96 , B01J2531/985 , C07B33/00 , C07C29/48 , C07C45/294 , C07C51/31 , C07C315/02 , C07C2601/14 , C07D301/06 , C07D301/12 , C07D303/04 , C07D315/00 , Y02P20/584 , C07C35/08 , C07C49/78 , C07C47/228 , C07C49/10 , C07C49/403 , C07C47/575 , C07C49/04 , C07C59/347 , C07C317/14
摘要： The present invention relates to an oxidation reaction catalyzed by a reaction controlled phase-transfer catalyst having the general formula of [R1R2R3R4N]xHy[A] or QmMO3(L). The catalysts themselves are not soluble in the reaction medium, but can form an active species that is soluble in the reaction medium under the action of one of the reactants. The active species can in turn react selectively with another reactant. When one of the reactants is completely consumed, the catalyst will separated out from the reacting system and can be recovered by means of simple separation method. The recovered catalyst can be recycled with comparable efficiency as that of the original catalyst. The separation of said catalyst is similar to that of heterogeneous catalyst while said catalyst will completely exhibit the characteristics of homogeneous catalyst during the reaction. The catalytic oxidation reaction system is especially suitable for the large-scale industrial production of epoxy cyclohexane from cyclohexene or of epoxy propane from propylene.
摘要翻译：本发明涉及通过反应控制的相转移催化剂催化氧化反应，其具有通式[R 1 R 2 R 3 R 3 N R 4 N]] - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - （L）。催化剂本身不溶于反应介质，但可以在一种反应物的作用下形成可溶于反应介质的活性物质。活性物质又可以选择性地与另一种反应物反应。当其中一种反应物被完全消耗时，催化剂将从反应体系中分离出来并且可以通过简单的分离方法回收。回收的催化剂可以与原始催化剂的效率相当的效率再循环。所述催化剂的分离类似于非均相催化剂，而所述催化剂在反应期间将完全表现出均相催化剂的特性。催化氧化反应体系特别适用于从环己烯或丙烯环氧丙烷大规模工业生产环氧环己烷。

98. 发明授权

US06900085B2 ESD implant following spacer deposition 有权
标题翻译：间隔物沉积后的ESD植入
公开(公告)号：US06900085B2
公开(公告)日：2005-05-31
申请号：US09891885
申请日：2001-06-26
申请人： Mark T. Ramsbey , Michael Fliesler , Mark Randolph , Mimi Qian , Yu Sun
发明人： Mark T. Ramsbey , Michael Fliesler , Mark Randolph , Mimi Qian , Yu Sun
IPC分类号： H01L27/02 , H01L29/78 , H01L21/8234
CPC分类号： H01L29/7833 , H01L27/0266 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention provides a process for forming IC devices with ESD protection transistors. According to one aspect of the invention, an ESD protection transistor is provided with a light doping and then, after forming spacers, a heavy doping. The heavy doping with spacers in place can lower the sheet resistance, enhance the bipolar effect for the transistor, reduce the transistor's capacitance, and reduce the junction breakdown voltage, all without causing short channel effects. The invention thereby provides ESD protection transistors that are compact, highly sensitive, and fast-switching. The spacers can be formed at the same time as spacers for other transistors, such as other transistors in a peripheral region of the device.
摘要翻译：本发明的一个方面提供了一种用于形成具有ESD保护晶体管的IC器件的方法。根据本发明的一个方面，ESD保护晶体管具有轻掺杂，然后在形成间隔物之后，进行重掺杂。具有间隔物的重掺杂可以降低薄层电阻，增强晶体管的双极效应，降低晶体管的电容，并降低结击穿电压，而不会导致短沟道效应。因此，本发明提供了紧凑，高灵敏度和快速切换的ESD保护晶体管。间隔物可以与其他晶体管的间隔物同时形成，例如器件的外围区域中的其它晶体管。

99. 发明授权

US06645801B1 Salicided gate for virtual ground arrays 有权
标题翻译：用于虚拟地面阵列的闸门
公开(公告)号：US06645801B1
公开(公告)日：2003-11-11
申请号：US09968456
申请日：2001-10-01
申请人： Mark T. Ramsbey , Yu Sun , Chi Chang
发明人： Mark T. Ramsbey , Yu Sun , Chi Chang
IPC分类号： H01L218234
CPC分类号： H01L27/11568 , H01L21/76889 , H01L27/115
摘要： The present invention provides a process for saliciding the word lines in a virtual ground array flash memory device without saliciding the substrate between word lines. According to the invention, in a process for manufacturing virtual ground array flash memory devices, a salicide protect layer covers the substrate between word lines in the core region while the tops of the word lines are exposed. The salicide protect layer can be brought into the desired configuration by one or more of masking the substrate between word lines during an etching process, removing salicide protection material in the core by polishing, and forming a comparatively thick layer of salicide protection material in the core whereby the tendency of the salicide protect layer to follow the contour of the underlying structures is reduced. With the substrate between word lines protected by the salicide protect layer, the word lines are salicided. The process of the invention produces virtual ground array flash memory devices with salicided word lines, but without shorting between bit lines.
摘要翻译：本发明提供了一种在虚拟接地阵列闪存器件中对字线进行水印处理，而不会在字线之间对基片进行浸蚀。根据本发明，在虚拟接地阵列闪速存储器件的制造工艺中，当暴露出字线的顶部时，自对准保护层在芯部区域中的字线之间覆盖衬底。可以通过在蚀刻工艺期间在字线之间掩蔽衬底的一种或多种来将所述自对准保护层带入所需的构型，通过抛光去除芯中的自对准保护材料，以及在芯中形成比较厚的自对准保护材料层从而降低了防自杀剂保护层跟随下面结构轮廓的趋势。在由自对准保护层保护的字线之间的衬底上，字线被浸渍。本发明的方法产生具有带字线的虚拟接地阵列闪存器件，但是在位线之间没有短路。

100. 发明授权

US06509604B1 Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation 失效
标题翻译：用于闪存技术和LOCOS / STI隔离电路的氮化隧道氧化物的氮化屏障
公开(公告)号：US06509604B1
公开(公告)日：2003-01-21
申请号：US09491457
申请日：2000-01-26
申请人： Tuan Duc Pham , Mark T. Ramsbey , Yu Sun , Chi Chang
发明人： Tuan Duc Pham , Mark T. Ramsbey , Yu Sun , Chi Chang
IPC分类号： H01L29788
CPC分类号： H01L21/76202 , H01L21/76224 , H01L27/1052 , Y10S438/981
摘要： A semiconductor chip having a plurality of flash memory devices, shallow trench isolation in the periphery region, and LOCOS isolation in the core region. A hard mask is used first to create the shallow trench isolation. The LOCOS isolation is then created. Subsequent etching is used to remove stringers. The flash memory is able to use shallow trench isolation to limit encroachment. The flash memory may also have a nitridated tunnel oxide barrier layer. A hard mask is used to prevent nitride contamination of the gate oxide layer.
摘要翻译：具有多个闪速存储器件的半导体芯片，周边区域中的浅沟槽隔离以及芯区域中的LOCOS隔离。首先使用硬掩模来创建浅沟槽隔离。然后创建LOCOS隔离。随后的蚀刻用于去除桁条。闪存能够使用浅沟槽隔离来限制侵占。闪存也可以具有氮化的隧道氧化物阻挡层。使用硬掩模来防止栅极氧化物层的氮化物污染。

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